BU4525DX

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 9.0 t.b.f 0.4 t.b.f MAX. 1500 800 12 30 45 3.0 2.2 0.55 t.b.f UNIT V V A A W V A A V µs µs Ths ≤ 25 ˚C IC = 9.0 A; IB = 2.25 A f = 16 kHz f = 70 kHz IF = 9.0 A ICsat = 9.0 A;f = 16 kHz f = 70 kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 123 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 12 30 8 12 7 45 150 150 UNIT V V A A A A A W ˚C ˚C Ths ≤ 25 ˚C 1 Turn-off current. July 1998 1 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DX THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 9.0 A;IB = 2.25A IC = 9.0 A;IB = 2.25A IC = 1.0 A; VCE = 5 V IC = 9.0 A; VCE = 5 V IF = 9 A MIN. 7.5 800 0.96 4.2 - TYP. 13.5 50 1.01 t.b.f 5.8 - MAX. 1.0 2.0 3.0 1.06 7.6 2.2 UNIT mA mA V Ω V V V V Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (16 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time Switching times (70 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time ICsat = t.b.f t.b.f t.b.f t,b,f t.b.f µs µs CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 9.0 A;IB1 = 1.8 A (IB2 = -4.5 A) 3.7 0.4 4.5 0.55 µs µs TYP. 145 MAX. UNIT pF 2 Measured with half sine-wave voltage (curve tracer). July 1998 2 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DX MECHANICAL DATA Dimensions in mm Net Mass: 5.88 g 16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 3.3 5.8 max 3.0 25 0.95 max 5.45 5.45 3.3 Fig.1. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 3 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525DX DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 4 Rev 1.000