BUJ103AU

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf PARAMETER Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage D.C. current gain Fall time CONDITIONS VBE = 0 V TYP. 0.25 12.5 46 MAX. 700 700 400 4 8 50 1.0 60 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 3.0 A;IB = 0.6 A IC = 3.0 A; VCE = 5 V IC = 2.5 A; IB1= 0.4 A PINNING - SOT533 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 Top view 2 3 MBK915 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 700 400 700 4 8 2 4 50 150 150 UNIT V V V A A A A W ˚C ˚C Tmb ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 70 MAX. 2.5 UNIT K/W K/W October 1999 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat PARAMETER Collector cut-off current 1 Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VCEO = VCEOMmax (400V) VEB = 7 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 3.0 A; IB = 0.6 A IC = 3.0 A; IB = 0.6 A IC = 1 mA; VCE = 5 V IC = 500mA; VCE = 5 V IC = 2.0 A; VCE = 5 V IC = 3.0 A; VCE = 5 V MIN. 400 10 13 11 TYP. 0.25 0.97 17 22 16 12.5 MAX. 0.1 0.5 0.1 0.1 1.0 1.5 32 32 22 UNIT mA mA mA mA V V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4V; TYP. MAX. UNIT µs µs µs µs ns µs ns 0.48 2.7 0.27 0.6 3.3 0.35 ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1.2 46 1.4 60 1.34 98 1.8 200 1 Measured with half sine-wave voltage (curve tracer). October 1999 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU + 50v 100-200R IC 90 % ICon 90 % 10 % Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R IB ts ton toff IBon 10 % tr 30ns -IBoff tf Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 LC IBon 100 10 0 VCE / V LB T.U.T. -VBB min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 0 tp IB RB T.U.T. ts toff IBon 10 % tf t T -IBoff t Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.6. Switching times waveforms with inductive load. October 1999 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating VCEsat/V 2.0 1.6 IC=1A 1.2 2A 3A 4A 0.8 0.4 0 20 40 60 80 100 Tmb / C 120 140 0.0 0.01 0.10 IB/A 1.00 10.00 Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) HFE 50 Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C VBEsat/V 1.4 25C 30 100C 20 15 1.2 IC/IB = 4 -40C 10 1 25C -40C 5 0.8 VCE = 1V 2 0.6 100C 0.2 0.3 0.5 1 IC/A 2 3 5 10 0.01 0.05 0.1 IC/A 0.5 1 2 3 5 10 0.1 Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE HFE 50 Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC). VCEsat/V 0.8 25C 30 100C 20 15 0.6 -40C IC/IB = 4 10 100C 0.4 5 25C VCE = 5V 0.2 2 -40C 0 0.01 0.05 0.1 IC/A 0.5 1 2 3 5 10 0.5 IC/A 2 5 Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC). October 1999 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU 10 Zth j-mb / (K/W) VCC D= 0.5 0.2 0.1 0.05 0.1 0.02 0 T 0.01 10us 1ms t/s 0.1s 10ms t 1 LC VCL(RBSOAR) IBon P D tp D= tp T PROBE POINT LB T.U.T. -VBB Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Fig.16. Test Circuit for reverse bias safe operating area. Vcl ≤ 700V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc = 200µH ton/toff (ns) 10,000 toff 5,000 100C 3,000 2,000 IC (A) 9 8 1,000 500 ton 300 200 25C 7 VBE=-5V IC/IB = 5 100 1 2 3 IC/A 4 5 6 6 Fig.14. Resistive Switching. ton,toff = f(IC). 5 4 tfi/tsi (ns) 5,000 100C 2,000 1,000 500 tsi 3 25C IC/IB = 5 200 100 50 2 tfi 1 20 10 1 2 3 IC/A 4 5 6 0 0 100 200 300 400 500 600 700 800 900 Fig.15. Inductive switching. ton, toff = f(IC) VCEclamp (V) Fig.17. Reverse bias safe operating area Tj ≤ Tjmax October 1999 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU IC (A) 100 Duty Cycle = 0.01 Icm max 10 tp = Ic max (1) II 20us 50us 1 100us 200us (2) 0.1 500us DC I III 0.01 0.001 1 10 100 1,000 VCEclamp (V) Fig.18. Forward bias safe operating area. Ths ≤ 25 ˚C (1) (2) I II III NB: Ptot max and Ptot peak max lines. Second breakdown limits. Region of permissible DC operation. Extension for repetitive pulse operation. Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. October 1999 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU MECHANICAL DATA Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533 E E1 D1 mounting base D A1 A Q L 1 e1 e 2 b 3 wM c 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.89 0.71 b c D 7.28 6.94 D1 1.06 0.96 E 6.73 6.47 E1 5.36 5.26 e e1 L 9.8 9.4 Q 1.00 1.10 0.89 0.56 0.71 0.46 4.57 2.285 OUTLINE VERSION SOT533 REFERENCES IEC JEDEC TO-251 EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-18 Fig.19. SOT533 surface mounting package. Pin 2 connected to mounting base. October 1999 7 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1999 8 Rev 1.100