BUK218-50DC

Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC QUICK REFERENCE DATA DESCRIPTION Monolithic dual channel high side protected power switch in TOPFET2 technology assembled in a 7 pin plastic surface mount package. SYMBOL IL SYMBOL PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance, Tj = 25˚C MIN. 8 MAX. 50 16 150 40 UNIT A UNIT V A ˚C mΩ APPLICATIONS General purpose switch for driving lamps, motors, solenoids, heaters. VBG IL Tj RON FEATURES Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Overload and short circuit protection Self resetting overcurrent protection Overvoltage and undervoltage shutdown with hysteresis Off-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection FUNCTIONAL BLOCK DIAGRAM INPUT 1 BATT INPUT 2 STATUS CONTROL & PROTECTION CIRCUITS LOAD 1 GROUND RG LOAD 2 Fig.1. Elements of the TOPFET dual HSS with internal ground resistor. PINNING - SOT427 PIN 1 2 3 4 5 6 7 mb DESCRIPTION load 1 ground input 1 connected to mb status input 2 load 2 battery PIN CONFIGURATION mb SYMBOL B I1 L1 DUAL HSTF I2 S G L2 1234567 Fig. 2. Fig. 3. CONVENTION Positive currents flow into pins, except for load and ground pins. October 2001 1 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG IL PD Tstg Tj PARAMETER Continuous supply voltage Continuous load current per channel Total power dissipation Storage temperature Continuous junction temperature1 Reverse battery voltages2 Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 Input and status currents Continuous input current Continuous status current Repetitive peak input current Repetitive peak status current Inductive load clamping EBL Non-repetitive clamping energy (one channel) δ ≤ 0.1, tp = 300 µs δ ≤ 0.1, tp = 300 µs VBG = 13 V, IL = 8 A Tj = 150˚C prior to turn-off 150 mJ to limit input, status currents 3.2 kΩ Tmb ≤ 135˚C Tmb ≤ 25˚C CONDITIONS MIN. 0 -55 -40 MAX. 50 8 83.3 175 150 UNIT V A W ˚C ˚C VGB VGB - 16 32 V V II IS II IS -5 -5 -50 -50 5 5 50 50 mA mA mA mA ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. 2 UNIT kV 1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to ensure that the input and status currents do not exceed the limiting values. The internal ground resistor limits the reverse battery ground current. The connected loads must limit the reverse load currents. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). October 2001 2 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC THERMAL CHARACTERISTIC SYMBOL PARAMETER Thermal resistance1 Rth j-mb Junction to mounting base per channel both channels 2.4 1.2 3 1.5 K/W K/W CONDITIONS MIN. TYP. MAX. UNIT STATIC CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated SYMBOL VBG VBL VGL PARAMETER Clamping voltages Battery to ground Battery to load per channel Ground to load2 CONDITIONS IG = 1 mA IL = IG = 1 mA IL = 10 mA IL = 10 A; tp = 300 µs Supply voltage VBG Operating range 3 MIN. 45 50 18 20 TYP. 55 55 23 25 MAX. 65 65 28 30 UNIT V V V V battery to ground 9 V ≤ VBG ≤ 35 V VLG = 0 V Tmb = 25˚C VBL = VBG Tmb = 25˚C one channel on 5 5.5 - 35 V µA µA µA µA mA mA A Ω IB IL IG IL RG Currents Total quiescent current4 Off-state load current per channel Operating current Nominal load current 8 40 0.1 0.1 1.8 3.6 75 20 1 10 1 3 6 100 both channels on VBL = 0.5 V; Tmb = 85˚C IG = -200 mA; tp = 300 µs tp7 300 µs Effective internal ground resistance6 Resistances per channel VBG 9 to 35 V 5.5 V IL 10 A 5A Tj 25˚C 30 60 50 100 40 80 60 120 mΩ mΩ mΩ mΩ RON RON On-state resistance On-state resistance 150˚C 300 µs 25˚C 150˚C 1 Of the output Power MOS transistors. 2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 3 On-state resistance is increased if the supply voltage is less than 7 V. 4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads. 5 Per channel but with both channels conducting. Defined as in ISO 10483-1. 6 Equivalent of the parallel connected resistors for both channels. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. October 2001 3 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC INPUT CHARACTERISTICS 5.5 V ≤ VBG ≤ 35 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. SYMBOL II VIG VIG(ON) VIG(OFF) ∆VIG II(ON) II(OFF) PARAMETER Input current Input clamping voltage Input turn-on threshold voltage Input turn-off threshold voltage Input turn-on hysteresis Input turn-on current Input turn-off current VIG = 3 V VIG = 1.2 V CONDITIONS VIG = 5 V II = 200 µA MIN. 20 5.5 1.2 0.15 12 TYP. 60 7 2.1 1.8 0.3 MAX. 160 8.5 3 0.5 100 UNIT µA V V V V µA µA OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load on either channel can be detected in the off-state. Refer to TRUTH TABLE. This feature requires external load pull-up to a positive supply voltage via a suitable resistor. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25˚C. SYMBOL PARAMETER Open circuit detection VLG(OC) IB(OC) Load ground threshold voltage Supply quiescent current per OC channel VBG ≥ 9 V VBG = VLG = 16 V open circuit detected, other channel off -IL(OC) Load ground current per channel td(OC) Status delay time Application information Rext External load pull-up resistance Vext = 5 V per channel 10 kΩ VLG = 16 V VLG = 3.5 V input low to status low 200 22 65 300 40 100 µA µA µs 1.5 2.5 0.8 3.5 1.5 V mA CONDITIONS MIN. TYP. MAX. UNIT October 2001 4 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C. Refer to TRUTH TABLE. SYMBOL PARAMETER Undervoltage VBG(UV) ∆VBG(UV) Low supply threshold voltage1 Hysteresis Overvoltage VBG(OV) ∆VBG(OV) IBG(OV) High supply threshold voltage2 Hysteresis Operating current per channel VBG > VBG(OV) 35 0.4 40 1 1 45 2 2 V V mA 2 0.1 4.2 0.5 5.3 1 V V CONDITIONS MIN. TYP. MAX. UNIT OVERLOAD PROTECTION CHARACTERISTICS Independent protection per channel. Refer to TRUTH TABLE. 5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. SYMBOL PARAMETER Overload protection IL(lim) Load current limiting CONDITIONS VBL = VBG; tp = 300 µs VBG ≥ 8 V VBG = 5.5 V Tmb ≤ 125˚C prior to overload3 for protection4 which determines trip time5 100 150 200 200 500 W µs 18 15 30 27 42 42 A A MIN. TYP. MAX. UNIT Short circuit load protection PD(TO) TDSC Overload power threshold Characteristic time Overtemperature protection Tj(TO) ∆Tj(TO) Threshold junction temperature Hysteresis6 150 3 170 10 190 20 ˚C ˚C 1 Undervoltage sensors causes each channel to switch off and reset. 2 Overvoltage sensors causes each output channel to switch off to protect its load. 3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection. 4 Normal operation will be resumed when PD < PD(TO) and Tj < Tj(TO). 5 Trip time td sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ]. 6 After cooling below the reset temperature the channel will resume normal operation. October 2001 5 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC STATUS CHARACTERISTICS The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL VSG VSG(LO) IS PARAMETER Status clamping voltage Status low voltage Status leakage current CONDITIONS IS = 100 µA IS = 100 µA IS = 250 µA VSG = 5 V Tmb = 25˚C IS(SAT) Status saturation current1 Application information RS External pull-up resistor 47 kΩ VSG = 5 V MIN. 5.5 5 TYP. 7 0.7 0.1 10 MAX. 8.5 0.9 1.1 10 1 15 UNIT V V V µA µA mA TRUTH TABLE INPUT 1 L L L H H H H H H H H H H 2 L L H L H X X X L H X L H UV 0 0 0 0 0 1 0 0 0 0 0 0 0 ABNORMAL CONDITIONS DETECTED SUPPLY X X X 0 0 0 1 0 0 0 0 0 0 LOAD 1 0 1 1 0 0 X X 0 0 0 0 0 0 X X X 0 0 X 0 1 1 1 0 0 0 X X X 0 0 X 0 X X X 1 1 1 LOAD 2 1 2 H L L H H H H L L L L L L both off & normal both off, one/both OC or short to V+ one off & OC, other on & normal one on & normal, other off & normal both on & normal supply undervoltage lockout supply overvoltage shutdown one SC shutdown one SC shutdown, other off & normal one SC shutdown, other on & normal one OT shutdown one OT shutdown, other off & normal one OT shutdown, other on & normal 0 X 0 0 0 0 X X 0 0 X 0 0 X X 0 0 0 X 0 X 0 0 X 0 0 X X 0 0 0 X 0 X X 0 X X 0 OFF OFF OFF OFF OFF ON ON ON OFF ON OV OC SC OT OC SC OT LOAD OUTPUT STATUS DESCRIPTION OFF OFF OFF OFF OFF OFF OFF OFF X ON X ON OFF OFF OFF OFF KEY TO ABBREVIATIONS L H X 0 1 logic low logic high don’t care condition not present condition present UV OV OC SC OT undervoltage overvoltage open circuit short circuit overtemperature 1 For example with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device. October 2001 6 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC SWITCHING CHARACTERISTICS Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω per channel. SYMBOL td on dV/dton t on PARAMETER During turn-on Delay time Rate of rise of load voltage Total switching time During turn-off Delay time Rate of fall of load voltage Total switching time CONDITIONS from input going high to 10% VL 30% to 70% VL to 90% VL from input going low to 90% VL 70% to 30% VL to 10% VL MIN. 0.5 TYP. 30 1 100 MAX. 2 400 UNIT µs V/µs µs µs V/µs µs td off dV/dtoff t off 0.5 - 20 1 40 2 200 CAPACITANCES Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V SYMBOL Csg Cig Cbl PARAMETER Status capacitance per channel Input capacitance Output capacitance VBG = 13 V VBL = 13 V 15 265 20 375 pF pF CONDITIONS VSG = 5 V MIN. TYP. 11 MAX. 15 UNIT pF October 2001 7 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-PAK); 7 leads (one lead cropped) SOT427 A E A1 D1 mounting base D HD 4 Lp 1 7 b e e e e e e c Q 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.27 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT427 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-04-18 Fig.4. SOT427 surface mounting package1, centre pin connected to mounting base. 1 Epoxy meets UL94 V0 at 1/8". Net mass: 1.5 g. For soldering guidelines and SMD footprint design, please refer to Data Handbook SC18. October 2001 8 Rev 2.010 Philips Semiconductors Product specification TOPFET dual high side switch BUK218-50DC DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS1 Objective data PRODUCT STATUS2 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. October 2001 9 Rev 2.010