BUK451-100B

Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK451 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -100A 100 3.0 40 175 0.85 MAX. -100B 100 3.0 40 175 1.1 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -100A 3.0 3.0 12 40 175 175 MAX. 100 100 30 -100B 3.0 3.0 12 UNIT V V V A A A W ˚C ˚C Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 3.75 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK451-100A ID = 2.5 A BUK451-100B MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.75 0.90 MAX. 4.0 10 1.0 100 0.85 1.10 UNIT V V µA mA nA Ω Ω DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 2.5 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 1.3 TYP. 1.7 160 45 16 4 15 10 10 3.5 4.5 7.5 MAX. 240 60 25 6 25 20 20 UNIT S pF pF pF ns ns ns ns nH nH nH VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 3.0 A ; VGS = 0 V IF = 3.0 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 1.1 100 0.25 MAX. 3.0 12 1.4 UNIT A A V ns µC January 1980 Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth j-mb / (K/W) D= 0.5 1 0.2 0.1 0.05 0.1 0.02 0 P D tp D= tp T t 1E+01 T 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.01 1E-05 1E-03 t/s 1E-01 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID / % 120 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 Ths / C 120 140 160 180 Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 10 ID / A BUK4y1-100 VGS / V = 15 10 9 8 A B 6 8 4 7 6 5 0 0 4 8 12 VDS / V 16 20 2 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V ID / A BUK451-100 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS ID / A 5 6 7 VGS / V = 8 9 10 15 BUK4y1-100 100 5 A S VD /ID tp = 10 us 100 us 1 ms B 4 10 RD S( ON )= 3 2 1 DC 10 ms 100 ms 1 0.1 1 10 VDS / V 100 0 0 2 4 VDS / V 6 8 10 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS January 1980 Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B 10 ID / A BUK4y1-100 4 VGS(TO) / V max. 8 Tj / C = 25 typ. 3 min. 2 6 150 4 1 2 0 0 2 4 6 8 VGS / V 10 12 14 0 -60 -20 20 60 Tj / C 100 140 180 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S BUK4y1-100A Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS ID / A SUB-THRESHOLD CONDUCTION 2 1E-01 1E-02 1.5 1E-03 2% typ 98 % 1 1E-04 0.5 1E-05 0 0 2 4 ID / A 6 8 1E-06 0 1 2 VGS / V 3 4 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V a Normalised RDS(ON) = f(Tj) Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS C / pF BUK4y1-100A 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1000 Ciss 100 Coss -60 -20 20 60 Tj / C 100 140 180 10 0 20 VDS / V 40 Crss Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 2.5 A; VGS = 5 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz January 1980 Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B 15 VGS / V BUK4y1-100A 10 9 IF / A BUK4y1-100A VDS / V = 20 10 80 8 7 6 5 4 Tj / C = 150 25 5 3 2 1 0 0 2 QG / nC 4 6 0 0 0.2 0.4 0.6 0.8 1 VSDS / V 1.2 1.4 1.6 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 3 A; parameter VDS Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj January 1980 Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.15. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". January 1980 Philips Semiconductors Preliminary Specification PowerMOS transistor BUK451-100A/B DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1980