BUK545-60H

Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. BUK545-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60 21 30 150 38 UNIT V A W ˚C mΩ PINNING - SOT186 PIN 1 2 3 gate drain DESCRIPTION PIN CONFIGURATION case SYMBOL d g source 123 case isolated s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 MAX. 60 60 15 20 21 13.5 82 30 150 150 UNIT V V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS With heatsink compound TYP. 55 MAX. 4.17 UNIT K/W K/W August 1994 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 ˚C VDS = 60 V; VGS = 0 V; Tj =125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; ID = 20 A MIN. 60 1.0 - BUK545-60H TYP. 1.5 1 0.1 10 25 MAX. 2.0 10 1.0 100 38 UNIT V V µA mA nA mΩ DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 20 A VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. 11 TYP. 20 1200 470 180 25 120 160 110 4.5 7.5 MAX. 1750 600 275 40 150 220 145 UNIT S pF pF pF ns ns ns ns nH nH VDD = 30 V; ID = 3 A; VGS = 5 V; RGS = 50 Ω; Rgen = 50 Ω Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 1500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 12 - pF REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 21 A ; VGS = 0 V IF = 21 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 0.9 60 0.25 MAX. 21 84 2.0 UNIT A A V ns µC August 1994 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 41 A ; VDD ≤ 25 V ; Ths = 25 ˚C VGS = 5 V ; RGS = 50 Ω MIN. - BUK545-60H TYP. - MAX. 90 UNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound 1000 ID / A BUK545-60H 100 RD S( ON )= VD S/ ID tp = 10 us 100 us 100 us 1 ms 10 DC 1 10 ms 1 ms 100 ms 10 ms 100 ms 0 20 40 60 80 Ths / C 100 120 140 0.1 0.1 1 10 VDS / V 100 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ths) Normalised Current Derating with heatsink compound Fig.3. Safe operating area. Ths = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Zth / (K/W) D= 0.5 1 0.2 0.1 0.05 0.02 BUKx45-lv 120 110 100 90 80 70 60 50 40 30 20 10 0 ID% 10 0.1 0.01 0 P D tp D= tp T t 1E+01 0 20 40 60 80 Ths / C 100 120 140 0.001 1E-07 T 1E-05 1E-03 t/s 1E-01 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 5 V Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T August 1994 3 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET BUK545-60H 100 ID / A 15 10 6 BUK5Y5-60H 40 gfs / S BUK5Y5-60H 80 5 30 4.5 60 4 40 3.5 3 VGS / V = 2.5 0 0 2 4 VDS / V 6 8 10 0 0 20 40 ID / A 60 80 10 Tj / C = -40 25 150 20 20 100 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 10 V a 0.2 RDS(ON) / Ohm 2.5 3 3.5 4 4.5 BUK5Y5-60H Normalised RDS(ON) = f(Tj) 1.5 VGS / V = 5 0.15 1.0 0.1 10 0.05 0.5 6 15 0 0 20 40 ID / A 60 80 100 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS ID / A BUK5Y5-60H Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 5 V VGS(TO) / V max. 100 80 2 typ. 60 min. 1 40 20 Tj / C = -40 25 150 0 0 1 2 3 4 VGS / V 5 6 7 8 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS August 1994 4 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET BUK545-60H 1E-01 ID / A SUB-THRESHOLD CONDUCTION IS / A 100 Tj / C = -40 25 150 BUKXY5-60H 1E-02 2% 98 % 80 typ 1E-03 60 1E-04 40 1E-05 20 1E-06 0 0.4 0.8 1.2 VGS / V 1.6 2 2.4 0 0 0.5 VSDS / V 1 1.5 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS C / pF Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj WDSS% 10000 BUK5Y5-60H Ciss Coss Crss 120 110 100 90 80 70 1000 60 50 40 30 20 10 100 0.1 0 1 VDS / V 10 100 20 40 60 80 100 Ths / C 120 140 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz VGS / V BUK5Y5-60H Fig.15. Normalised avalanche energy rating. WDSS% = f(Ths); conditions: ID = 41 A 15 + VDD / V = 12 10 48 VDD L VDS VGS -ID/100 T.U.T. R 01 shunt 5 0 RGS 0 0 10 20 30 40 QG / nC 50 60 70 80 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 41 A; parameter VDS Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 ⋅ LID ⋅ BVDSS /(BVDSS − VDD ) August 1994 5 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET MECHANICAL DATA Dimensions in mm Net Mass: 2 g BUK545-60H 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min 1 0.4 M 2 3 0.9 0.7 2.54 5.08 top view 1.3 0.55 max Fig.17. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". August 1994 6 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET DEFINITIONS Data sheet status Objective specification Product specification Limiting values BUK545-60H This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1994 7 Rev 1.000 Error Log 545-60.H 1) Level: Format Error Message: Page break required with Keep enabled Location: Document Body Page E1 96-11-11 04:14 pm