BUK7518-30

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK7518-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 55 103 175 18 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 30 30 16 55 38 220 103 175 UNIT V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 1.45 UNIT K/W K/W ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 kΩ) MIN. MAX. 2 UNIT kV December 1997 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS ±V(BR)GSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 30 V; VGS = 0 V; VGS = ±10 V; VDS = 0 V Tj = 175˚C Tj = 175˚C Tj = 175˚C MIN. 30 27 2.0 1.0 16 TYP. 3.0 0.05 0.02 15 - BUK7518-30 MAX. 4.0 4.4 10 500 1 20 18 33.5 UNIT V V V V µA µA µA µA V mΩ mΩ Gate source breakdown voltage IG = ±1 mA; Drain-source on-state VGS = 10 V; ID = 25 A resistance DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A ID = 55 A; VDD = 24 V; VGS = 10 V MIN. 7 TYP. 15 29.5 4.5 14 1000 390 180 15 22 30 18 3.5 4.5 7.5 MAX. 20 35 45 25 UNIT S nC nC nC pF pF pF ns ns ns ns nH nH nH VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 15 V; ID = 25 A; VGS = 10 V; RG = 5 Ω Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 55 A; VGS = 0 V IF = 55 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 25 V TYP. 0.95 1.0 70 0.1 MAX. 55 220 1.2 UNIT A A V ns µC December 1997 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 28 A; VDD ≤ 25 V; VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. TYP. - BUK7518-30 MAX. 80 UNIT mJ December 1997 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7518-30 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1E+01 Zth / (K/W) 1E+00 0.5 0.2 0.1 0.05 0.02 0 T t 1E-01 P D tp p D= t T 1E-02 0 20 40 60 80 100 Tmb / C 120 140 160 180 1E-03 1E-07 1E-05 1E-03 t/s 1E-01 1E+01 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A 80 12 10 60 8 VGS / V = 6.5 6 40 5.5 5 4.5 4 120 110 100 90 80 70 60 50 40 30 20 10 0 BUK7518-30 20 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 0 2 4 VDS / V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON) / mOhm 5.5 6 6.5 8 1000 ID / A 7518-30 40 7518-30 100 RD S ) (ON =V DS / ID tp = 10 us 100 us 30 10 20 12 VGS / V = 1 ms 10 DC 10 ms 100 ms 10 1 1 10 VDS / V 100 0 0 20 40 ID / A 60 80 100 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS December 1997 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7518-30 ID / A 80 Tj / C = 25 60 7518-30 5 VGS(TO) / V max. BUK759-60 175 4 typ. 3 40 2 min. 20 1 0 0 2 4 VGS / V 6 8 10 0 -100 -50 0 50 Tj / C 100 150 200 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Sub-Threshold Conduction 25 7518-30 1E-01 20 Tj / C = 25 175 1E-02 2% typ 98% 15 1E-03 10 1E-04 5 1E-05 0 0 20 40 ID / A 60 80 1E-06 0 1 2 3 4 5 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V a 2 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS C / pF 30V TrenchMOS 10000 7518-30 1.5 Ciss 1 1000 0.5 Coss Crss 0 -100 -50 0 50 Tj / C 100 150 200 100 0.1 1 VDS / V 10 100 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 10 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz December 1997 5 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7518-30 10 VGS / V 7518-30 120 110 100 WDSS% 8 VDS / V = 6 6 24 90 80 70 60 50 40 30 20 10 0 4 2 0 0 5 10 15 QG / nC 20 25 30 20 40 60 80 100 120 Tmb / C 140 160 180 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 55 A; parameter VDS IF / A 7518-30 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 28 A 80 + L 60 VDD VDS Tj / C = 175 40 25 VGS 0 T.U.T. -ID/100 20 RGS 0 R 01 shunt 0 0.5 1 VSDS / V 1.5 2 Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 ⋅ LID ⋅ BVDSS /(BVDSS − VDD ) + RD VDS VGS 0 RG T.U.T. VDD - Fig.17. Switching test circuit. December 1997 6 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET MECHANICAL DATA Dimensions in mm Net Mass: 2 g BUK7518-30 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". December 1997 7 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET DEFINITIONS Data sheet status Objective specification Product specification Limiting values BUK7518-30 This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 8 Rev 1.100