BYD11D

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. k a BYD11 series MAM196 Fig.1 Simplified outline (SOD91) and symbol. TYPE NUMBER BYD11D BYD11G BYD11J BYD11K BYD11M 11D 11G 11J 11K 11M MARKING CODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD11D BYD11G BYD11J BYD11K BYD11M VRWM crest working reverse voltage BYD11D BYD11G BYD11J BYD11K BYD11M VR continuous reverse voltage BYD11D BYD11G BYD11J BYD11K BYD11M − − − − − 200 400 600 800 1000 V V V V V − − − − − 200 400 600 800 1000 V V V V V PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT 1996 Sep 26 2 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series SYMBOL IF(AV) PARAMETER average forward current CONDITIONS Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 60 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 MIN. − MAX. 0.50 A UNIT − 0.37 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax t = 20 µs half sinewave; Tj = Tj max prior to surge see Fig.5 − 10 A PRSM Tstg Tj non-repetitive peak reverse power dissipation storage temperature junction temperature − −65 −65 200 +175 +175 W °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VFtzt V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYD11D BYD11G BYD11J BYD11K BYD11M IR trr Cd reverse current VR = VRRMmax; see Fig.7 VR = VRRMmax; Tj = 165 °C; see Fig.7 reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 CONDITIONS IF = 0.5 A; Tj = Tj max; see Fig.6 IF = 0.5 A; see Fig.6 IR = 0.1 mA 225 450 650 900 1100 − − − − − − − − − − − 3 14 − − − − − 1 75 − − V V V V V µA µA µs pF MIN. − − TYP. − − MAX. 0.91 1.06 UNIT V V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 26 3 Not recommended for new designs PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 180 250 UNIT K/W K/W Philips Semiconductors Product specification Controlled avalanche rectifiers GRAPHICAL DATA MBG042 BYD11 series MBG051 handbook, halfpage 0.8 handbook, halfpage 0.8 IF(AV) (A) 0.6 IF(AV) (A) 0.6 0.4 0.4 0.2 0.2 0 0 40 80 120 a = 1.57; VR = VRRMmax; δ = 0.5. Lead length 10 mm. 160 200 Ttp (oC) 0 0 40 80 120 a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9. 160 200 Tamb (oC) Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBG634 handbook, halfpage 0.8 MCD583 handbook, halfpage 200 P (W) 0.6 a = 3 2.5 2 1.57 1.42 Tj o C) ( 0.4 100 D 0.2 G J K M 0 0 0.2 0.4 IF (AV) (A) 0.6 0 0 500 VR (V) 1000 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Solid line = VR. Dotted line = VRRM; δ = 0.5. Fig.5 Maximum permissible junction temperature as a function of reverse voltage. 1996 Sep 26 4 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series MBG047 handbook, halfpage 4 3 10 handbook, halfpage MCD582 IF (A) 3 IR (µA) 10 2 2 10 1 0 0 1 1 VF (V) 2 0 100 Tj ( oC) 200 Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. VR = VRRMmax. Fig.6 Forward current as a function of forward voltage; maximum values. Fig.7 Reverse current as a function of junction temperature; maximum values. 10 1 handbook, halfpage MBG025 handbook, halfpage 50 25 Cd (pF) 7 1 50 2 10 −1 1 10 3 102 VR (V) 10 3 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Device mounted on a printed-circuit board. 1996 Sep 26 5 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers BYD11 series handbook, full pagewidth DUT + IF (A) 0.5 1Ω t rr 10 Ω 25 V 50 Ω 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 Sep 26 6 Not recommended for new designs Philips Semiconductors Product specification Controlled avalanche rectifiers PACKAGE OUTLINE BYD11 series handbook, full pagewidth 3.5 max 0.55 max 1.7 max 29 min 3.0 max 29 min MBC053 Dimensions in mm. The marking band indicates the cathode. Fig.11 SOD91. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 26 7 Not recommended for new designs