BYD31

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D122 BYD31 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 05 1996 Sep 18 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack. k a BYD31 series and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD31D BYD31G BYD31J BYD31K BYD31M VR continuous reverse voltage BYD31D BYD31G BYD31J BYD31K BYD31M IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; PCB mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 °C; see Fig.4 Tamb = 60 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − − − − − − 200 400 600 800 1000 440 V V V V V mA PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT − 320 mA − − − 4 3 5 A A A 1996 Sep 18 2 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation BYD31D to J BYD31K and M Tstg Tj storage temperature junction temperature see Fig.7 CONDITIONS t = 20 µs half sine wave; Tj = Tj max prior to surge − − −65 −65 BYD31 series MIN. MAX. UNIT 100 50 +175 +175 W W °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.5 A; Tj = Tj max; see Fig.8 IF = 0.5 A; see Fig.8 V(BR)R reverse avalanche breakdown voltage BYD31D BYD31G BYD31J BYD31K BYD31M IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 °C; see Fig.9 trr reverse recovery time BYD31D to J BYD31K and M Cd dI R -------dt diode capacitance maximum slope of reverse recovery current BYD31D to J BYD31K and M when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25A see Fig.12 f = 1 MHz; VR = 0 V; see Fig.10 when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 IR = 0.1 mA 300 500 700 900 1100 − − − − − − − − − − − − − − 1 75 V V V V V µA µA MIN. − − TYP. − − MAX. 1.15 1.35 V V UNIT − − − − − 9 250 300 − ns ns pF − − − − 6 5 A/µs A/µs 1996 Sep 18 3 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm BYD31 series VALUE 180 250 UNIT K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the “General Part of associated Handbook”. 1996 Sep 18 4 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers GRAPHICAL DATA MGC517 BYD31 series MGC518 handbook, halfpage 0.6 handbook, halfpage 0.6 IF(AV) (A) lead length 10 mm 0.4 IF(AV) (A) 0.4 0.2 0.2 0 0 100 Ttp a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. ( oC) 200 0 0 100 Tamb ( o C) 200 a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MCD580 handbook, full pagewidth 5.0 I FRM (A) δ= 0.05 0.1 2.5 0.2 0.5 1 0 10 −2 10 −1 10 0 10 1 10 2 10 3 tp (ms) 10 4 Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Sep 18 5 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series MCD586 handbook, full pagewidth 4 I FRM (A) 3 δ= 0.05 2 0.1 0.2 1 0.5 1 0 10 −2 10 −1 10 0 10 1 10 2 10 3 tp (ms) 10 4 Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD584 MCD583 handbook, halfpage 1.0 a=3 2.5 handbook, halfpage 200 P (W) Tj ( o C) 2 a = 1.57 0.5 1.42 100 D G J K M 0 0 0.25 I F(AV) (A) 0.50 0 0 500 VR (V) 1000 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Dotted line = VRRM; δ = 0.5. Fig.7 Maximum permissible junction temperature as a function of reverse voltage. 1996 Sep 18 6 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series handbook, halfpage 3 MCD585 3 10 handbook, halfpage MCD582 IF (A) 2 IR (µA) 10 2 1 10 0 0 1 2 VF (V) 3 1 0 100 Tj ( oC) 200 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Forward current as a function of forward voltage; maximum values. Fig.9 Reverse current as a function of junction temperature; maximum values. MGC516 10 handbook, halfpage Cd (pF) 5 handbook, halfpage 50 25 7 50 2 2 3 1 1 10 10 2 VR (V) 10 3 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. Fig.11 Device mounted on a printed-circuit board. 1996 Sep 18 7 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYD31 series handbook, full pagewidth DUT + IF (A) 0.5 1Ω t rr 10 Ω 25 V 50 Ω 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. IF andbook, halfpage dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Sep 18 8 Not recommended for new designs Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE BYD31 series handbook, full pagewidth 3.5 max 0.55 max 1.7 max 29 min 3.0 max 29 min MBC053 Dimensions in mm. The marking band indicates the cathode. Fig.14 SOD91. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 18 9 Not recommended for new designs