BYM359DX

Philips Semiconductors Product specification Dual diode fast, high-voltage FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab BYM359DX SYMBOL modulator damper QUICK REFERENCE DATA DAMPER VR=1500 V 3 MODULATOR VR=800 V VF ≤ 1.45 V IF(RMS) = 11 A IFSM ≤ 60 A trr ≤ 145 ns 1 VF ≤ 1.3 V IF(RMS) =15.7 A 2 IFSM ≤ 60 A trr ≤ 300 ns GENERAL DESCRIPTION Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM359DX contains diodes with performance characteristics designed specifically for applications from 16kHz to 56kHz The BYM359DX series is supplied in the conventional leaded SOT399 package. PINNING PIN 1 2 3 DESCRIPTION modulator anode. common anode/cathode damper cathode SOT399 case 123 LIMITING VALUES Tj = 25 ˚C unless otherwise stated DAMPER SYMBOL VRSM VRRM VRWM IF(AV) IF(RMS) IFRM IFSM PARAMETER Peak non-repetitive reverse voltage. Peak repetitive reverse voltage Crest working reverse voltage Average forward current RMS forward current Peak repetitive forward current Peak non-repetitive forward current sinusoidal;a=1.57 t=25 µs δ= 0.5 Ths ≤ 83 ˚C t = 10ms t = 8.3 ms sinusoidal; with reapplied VRWM(MAX) CONDITIONS MIN MAX 1500 1500 1300 10 15.7 20 60 66 MODULATOR MIN MAX 800 600 600 8 11.0 16.0 60 66 UNIT V V V A A A A A Tstg TJ Storage temperature Operating junction temperature -40 - 150 150 -40 - 150 150 ˚C ˚C March 2000 1 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. - BYM359DX MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF THERMAL RESISTANCES DAMPER SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air. TYP. 35 MAX. 3.5 MODULATOR TYP. MAX. 3.5 35 UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated DAMPER SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 6.5 A IF = 6.5 A; Tj = 125˚C VR = VRWM VR = VRWM Tj = 100 ˚C TYP. 1.1 1.05 10 50 MAX. 1.45 1.3 250 500 MODULATOR TYP. 1.15 1.1 10 100 MAX. 1.55 1.45 100 600 UNIT V V µA µA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated DAMPER SYMBOL trr Qs Vfr PARAMETER Reverse recovery time Reverse recovery charge Peak forward recovery voltage CONDITIONS IF = 1 A; VR ≥ 30 V; -dIF/dt = 50 A/µs 2 A,30 V,20 A/µs IF = 6.5 A; dIF/dt = 50 A/µs TYP. 200 1.2 27 MAX. 300 2.0 MODULATOR TYP. 125 0.5 18.0 MAX. 145 0.7 UNIT ns µC V March 2000 2 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX I dI F dt F 15 PF / W Vo = 1.25 V Rs = 0.03 Ohms BY329 Ths(max) / C a = 1.57 1.9 2.2 78 trr time 10 4 5 102 2.8 126 Qs I I 25% 100% R rrm 0 0 2 4 IF(AV) / A 6 150 8 Fig.1. Definition of trr, Qs and Irrm Fig.4. Modulator maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV). I F 80 70 IFS(RMS) / A BY229 IFSM 60 50 time VF V VF time fr 40 30 20 10 0 1ms 10ms 0.1s tp / s 1s 10s Fig.2. Definition of Vfr Fig.5. Modulator maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. 20 PF / W Vo = 1.25 V Rs = 0.03 Ohms BY329 Ths(max) / C 54 D = 1.0 78 30 IF / A Tj = 150 C Tj = 25 C BY229F 15 0.5 0.2 0.1 I tp D= tp T t 20 10 102 10 5 T 126 typ max 0 0 2 4 6 IF(AV) / A 8 10 150 12 0 0 0.5 1 VF / V 1.5 2 Fig.3. Modulator maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T. Fig.6. Modulator typical and maximum forward characteristic; IF = f(VF); parameter Tj March 2000 3 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX 10 Qs / uC Tj = 150 C Tj = 25 C BY329 100 Cd / pF BY329 IF = 10 A 10 A 2A 1 1A 2A 1A 10 0.1 1 10 -dIF/dt (A/us) 100 1 1 10 VR / V 100 1000 Fig.7. Modulator maximum Qs at Tj = 25˚C and 150˚C Fig.9. Modulator typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C 1000 trr / ns BY329 10 Transient thermal impedance, Zth j-hs (K/W) IF = 10 A 10A 1A 1A 100 0.1 1 0.01 P D tp D= tp T t Tj = 150 C Tj = 25 C 10 1 10 -dIF/dt (A/us) 100 0.001 1us 10us T 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229F 10s Fig.8. Modulator maximum trr measured to 25% of Irrm; Tj = 25˚C and 150˚C Fig.10. Modulator transient thermal impedance Zth = f(tp) March 2000 4 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage BYM359DX 80 70 IFS(RMS) / A BY359 IF / A 30 Tj=150C BY359 IFSM 60 50 40 30 10 20 Tj=25C typ 20 10 0 1ms 10ms 0.1s tp / s 1s 10s 0 0 1.0 VF / V 2.0 max Fig.11. Damper maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. Transient thermal impedance, Zth j-mb (K/W) Fig.13. Damper forward characteristic IF = f(VF); parameter Tj 10 1 0.1 0.01 P D tp D= tp T t 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY359 10s Fig.12. Damper transient thermal impedance Zth = f(tp) March 2000 5 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage MECHANICAL DATA Dimensions in mm Net Mass: 5.88 g BYM359DX 16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 5.45 5.45 3.3 5.8 max 3.0 25 0.9 max 3.3 Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 2000 6 Rev 1.000 Philips Semiconductors Product specification Dual diode fast, high-voltage DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYM359DX This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 2000 7 Rev 1.000