BYV118-40

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance BYV118, BYV118B series SYMBOL QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V a1 1 k2 a2 3 IO(AV) = 10 A VF ≤ 0.6 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118 series is supplied in the SOT78 conventional leaded package. The BYV118B series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118BYV118BVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (both diodes conducting) Repetitive peak forward current (per diode) Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 108 ˚C square wave; δ = 0.5; Tmb ≤ 127 ˚C square wave; δ = 0.5; Tmb ≤ 127 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 35 35 35 35 35 MAX. 40 40 40 40 40 10 10 100 110 1 150 175 45 45 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1. It is not possible to make connection to pin 2 of the SOT404 pckage. May 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS BYV118, BYV118B series MIN. - TYP. MAX. UNIT 60 50 4.5 3 K/W K/W K/W K/W per diode both diodes SOT78 package in free air SOT404 package, pcb mounted, minimum footprint, FR4 board ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage per diode Reverse current per diode Junction capacitance per diode CONDITIONS IF = 5 A; Tj = 125˚C IF = 10 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.52 0.72 0.06 6 155 0.6 0.87 0.5 15 V V mA mA pF May 1998 2 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier BYV118, BYV118B series 5 4 3 2 Forward dissipation, PF (W) PBYR1045CTD Vo = 0.43 V Rs = 0.034 Ohms 0.5 0.2 0.1 Tmb(max) / C 137.5 D = 1.0 132 146.5 100 Reverse current, IR (mA) PBYR645CT 10 125 C 100 C 1 I tp D= tp T t 75 C 50 C Tj = 25 C 141 155.5 1 T 0.1 0 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 150 8 0.01 0 25 Reverse voltage, VR (V) 50 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Forward dissipation, PF (W) PBYR1045CTD Tmb(max) / C 137.5 Vo = 0.43 V Rs = 0.034 Ohms a = 1.57 4 132 1.9 2.2 2.8 3 146.5 4 5 2 1 0 141 155.5 150 5 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Cd / pF 1000 PBYR645CT 100 10 0 1 2 3 4 Average forward current, IF(AV) (A) 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). BYV118 Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 20 Forward current, IF (A) Tj = 25 C Tj = 125 C 10 Transient thermal impedance, Zth j-mb (K/W) 15 1 typ 10 max 5 0.1 P D tp D= tp T t T 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 1us 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV118 10s Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; per diode; Zth j-mb = f(tp). May 1998 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYV118, BYV118B series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.7. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max BYV118, BYV118B series 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.8. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.9. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". May 1998 5 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV118, BYV118B series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1998 6 Rev 1.300