BYV29B-500

Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BYV29B-500 SYMBOL QUICK REFERENCE DATA VR = 500 V k 1 a 2 VF ≤ 1.03 V IF(AV) = 9 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV29B-500 is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION no connection cathode1 anode SOT404 (D2-PAK) tab 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM Tstg Tj PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current2 Repetitive peak forward current Non-repetitive peak forward current. Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 500 500 500 9 18 100 110 150 150 UNIT V V V A A A A ˚C ˚C square wave; δ = 0.5; Tmb ≤ 123 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 123 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board. TYP. 50 MAX. 2.5 UNIT K/W K/W 1 it is not possible to make a connection to pin 2 of the SOT404 package 2 Neglecting switching and reverse current losses. September 2001 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs MIN. - BYV29B-500 TYP. 0.90 1.05 1.20 2.0 0.1 40 50 4.0 2.5 MAX. 1.03 1.25 1.40 50 0.35 60 60 5.5 - UNIT V V V µA mA nC ns A V I dI F dt F 15 PF / W Vo = 0.8900 V Rs = 0.0190 Ohms BYV29 Tmb(max) / C D = 1.0 112.5 t 0.5 rr time 10 0.2 0.1 5 tp T t 125 Q I I s 10% 100% I tp 137.5 D= R rrm T 0 0 5 IF(AV) / A 10 150 15 Fig.1. Definition of trr, Qs and Irrm Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x √D. I F 12 10 PF / W Vo = 0.89V Rs = 0.019 Ohms BYV29 Tmb(max) / C 120 a = 1.57 1.9 125 130 135 140 145 150 10 2.2 8 2.8 4 6 4 time VF V VF time fr 2 0 0 2 4 IF(AV) / A 6 8 Fig.2. Definition of Vfr Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). September 2001 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29B-500 1000 trr / ns 30 IF / A Tj=150 C BYW29 IF=10 A 100 1A 20 Tj=25 C typ max 10 Tj = 25 C Tj = 100C 1 1 10 dIF/dt (A/us) 100 10 0 0 0.5 1 VF / V 1.5 2 Fig.5. Maximum trr at Tj = 25˚C and 100˚C Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Qs / nC 10 Irrm / A IF=10A 1000 1 IF=1A 100 IF = 10 A 2A 0.1 10 0.01 1 Tj = 25 C Tj = 100C 10 -dIF/dt (A/us) 100 1 1.0 10 -dIF/dt (A/us) 100 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C. Fig.8. Maximum Qs at Tj = 25˚C 10 Transient thermal impedance, Zth j-mb (K/W) 1 0.1 0.01 P D tp D= tp T t 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29 10s Fig.9. Transient thermal impedance Zth j-mb= f(tp) September 2001 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max 4.5 max 1.4 max BYV29B-500 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.10. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.11. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". September 2001 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29B-500 DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS3 Objective data PRODUCT STATUS4 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Preliminary data Qualification Product data Production Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 3 Please consult the most recently issued datasheet before initiating or completing a design. 4 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. September 2001 5 Rev 1.000