BYV74-400

Philips Semiconductors Product specification Dual rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated, high efficiency rectifier diodes in a plastic envelope featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general, where both low conduction losses and low switching losses are essential. BYV74 series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr PARAMETER BYV74Repetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) Reverse recovery time MAX. 300 300 1.12 30 60 MAX. 400 400 1.12 30 60 MAX. 500 500 1.12 30 60 UNIT V V A ns PINNING - SOT93 PIN 1 2 3 tab DESCRIPTION Anode 1 (a) Cathode (k) Anode 2 (a) Cathode (k) PIN CONFIGURATION tab SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER CONDITIONS MIN. -40 -300 300 300 300 MAX. -400 400 400 400 30 27 43 30 150 160 112 150 150 -500 500 500 500 UNIT V V V A A A A A A A2s ˚C ˚C Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 136˚C Average output current (both diodes conducting)1 RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode. I2t for fusing Storage temperature Operating junction temperature square wave; δ = 0.5; Tmb ≤ 94 ˚C sinusoidal; a = 1.57; Tmb ≤ 98 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 94 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) t = 10 ms IO(RMS) IFRM IFSM I2t Tstg Tj 1 Neglecting switching and reverse current losses. For output currents in excess of 20 A, connection should be made to the exposed metal mounting base. August 1996 1 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. - BYV74 series TYP. 45 MAX. 2.4 1.4 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C MIN. TYP. 0.95 1.08 1.15 10 0.3 MAX. 1.12 1.25 1.36 50 0.8 UNIT V V V µA mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs MIN. TYP. 40 50 4.2 2.5 MAX. 60 60 5.2 UNIT nC ns A V August 1996 2 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74 series I dI F dt F 20 PF / W Vo = 0.89 Rs = 0.0137 BYV44 Tmb(max) / C 102 a = 1.57 1.9 2.2 114 t 15 2.8 4 rr time 10 126 Q I R I s 10% 100% 5 138 rrm 0 0 5 IF(AV) / A 10 150 15 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns I F 1000 IF=20 A 100 time V F V V F time 1A 10 fr 1 1 Tj = 25 C Tj = 100 C 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode 30 25 20 15 10 5 PF / W Vo = 0.8900 V Rs = 0.0137 Ohms BYV44 Tmb(max) / C 88 D = 1.0 90 0.5 10 Irrm / A IF= 20 A 102 114 tp T t 1 IF=1A 0.2 0.1 I tp D= 126 138 0.1 Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100 T 0 0 5 10 15 IF(AV) / A 20 150 25 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x √D. Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per diode August 1996 3 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74 series 50 IF / A Tj = 25 C Tj = 150 C BYV74 Zth (K/W) 10 40 1 30 typ 20 max 0.1 D tp 10 t 0 0 0.5 1 VF / V 1.5 2 0.01 10 us 1 ms tp / s 0.1 10 s Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.9. Transient thermal impedance per diode Zth j-mb= f(tp) 1000 Qs / nC IF = 20 A 100 2A 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C; per diode August 1996 4 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 5 g BYV74 series 15.2 max 14 13.6 2 max 4.25 4.15 4.6 max 2 4.4 21 max 12.7 max 2.2 max dimensions within this zone are uncontrolled 1 5.5 11 Fig.10. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". 0.5 min 13.6 min 2 3 1.15 0.95 0.5 M 1.6 0.4 August 1996 5 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV74 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 6 Rev 1.200