BYW28-500

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D333 BYW28 series Ultra fast low-loss controlled avalanche rectifier Product specification File under Discrete Semiconductors, SC01 1997 Nov 26 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability. handbook, halfpage BYW28 series The package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. DESCRIPTION Rugged glass SOD115 package, using a high temperature alloyed construction. k a MAM384 Fig.1 Simplified outline (SOD115) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYW28-500 BYW28-600 VR continuous reverse voltage BYW28-500 BYW28-600 IF(AV) average forward current Ttp = 85 °C; lead length = 10 mm; see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; printed-circuit board mounting (see Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 85 °C; see Fig.4 Tamb = 60 °C; see Fig.5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off see Fig.7 − − − 500 600 4 V V A − − 500 600 V V CONDITIONS MIN. MAX. UNIT − 1.7 A − − − 46 21 170 A A A ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature − −65 −65 20 +175 +175 mJ °C °C 1997 Nov 26 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R PARAMETER forward voltage reverse avalanche breakdown voltage BYW28-500 BYW28-600 IR reverse current VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 °C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.12 f = 1 MHz; VR = 0; see Fig.10 when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 CONDITIONS IF = 3.5 A; Tj = Tj max; see Fig.8 IF = 3.5 A; see Fig.8 IR = 0.1 mA 560 675 − − − − − − − − MIN. − − BYW28 series TYP. − − MAX. 0.90 1.15 V V UNIT − − 5 150 50 V V µA µA ns Cd dI R -------dt diode capacitance maximum slope of reverse recovery current − − 275 − − 4 pF A/µs THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the ‘General Part of Handbook SC01’. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 20 70 UNIT K/W K/W 1997 Nov 26 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier GRAPHICAL DATA BYW28 series handbook, halfpage 8 MBK237 handbook, halfpage 3 MBK236 IF(AV) (A) 6 IF(AV) (A) 2 4 1 2 0 0 40 80 120 200 160 Ttp (°C) 0 0 40 80 120 a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. 160 200 Tamb (°C) a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, full pagewidth 50 MGL262 IFRM (A) 40 δ = 0.05 30 0.1 20 0.2 10 0.5 1 0 10−2 10−1 1 10 102 103 tp (ms) 104 Ttp = 85 °C; Rth j-tp = 20 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = VRRMmax. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1997 Nov 26 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series handbook, full pagewidth 30 MBK238 IFRM (A) 20 δ = 0.05 0.1 10 0.2 0.5 1 0 10-2 10-1 1 10 102 103 104 tp (ms) Tamb = 60 °C; Rth j-a = 70 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = VRRMmax. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, halfpage 5.0 MGL261 Ptot handbook, halfpage 200 MGK645 (W) 4.0 a = 3 2.5 2 1.57 1.42 Tj (°C) 3.0 100 2.0 1.0 0 0 1 2 3 4 5 IF(AV) (A) 0 0 50 VR (%VRmax) 100 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.7 Maximum permissible junction temperature as a function of reverse voltage. 1997 Nov 26 5 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series handbook, halfpage 10 MBK235 IF (A) 8 103 handbook, halfpage IR (µA) 102 MGC550 6 4 10 2 0 0 0.4 0.8 1.2 1.6 VF (V) 2.0 1 0 100 Tj (°C) 200 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Forward current as a function of forward voltage; maximum values. Fig.9 Reverse current as a function of junction temperature; maximum values. 103 handbook, halfpage MGL260 handbook, halfpage 50 25 Cd (pF) 7 102 50 2 3 10 1 10 102 VR (V) 103 MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. Fig.11 Device mounted on a printed-circuit board. 1997 Nov 26 6 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier BYW28 series handbook, full pagewidth DUT + IF (A) 0.5 1Ω t rr 10 Ω 25 V 50 Ω 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. IF handbook, halfpage dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1997 Nov 26 7 Philips Semiconductors Ultra fast low-loss controlled avalanche rectifier PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads D DIMENSIONS (mm are the original dimensions) UNIT mm b max. 1.35 D max. 5.5 G max. 6.0 L min. 27  (1) Product specification BYW28 series SOD115 k a b L G L 0 2.5 scale 5 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD115 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-10-14 DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1997 Nov 26 8 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier NOTES BYW28 series 1997 Nov 26 9 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier NOTES BYW28 series 1997 Nov 26 10 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier NOTES BYW28 series 1997 Nov 26 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117027/1200/01/pp12 Date of release: 1997 Nov 26 Document order number: 9397 750 03121