BZT52H-C4V7

BZT52H series Single Zener diodes in a SOD123F package Rev. 01 — 22 December 2005 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface Mounted Device (SMD) plastic package. 1.2 Features s Total power dissipation: ≤ 830 mW s Wide working voltage range: nominal 2.4 V to 75 V (E24 range) s Small plastic package suitable for surface mounted design s Low differential resistance 1.3 Applications s General regulation functions 1.4 Quick reference data Table 1: Symbol VF Ptot Quick reference data Parameter forward voltage total power dissipation Conditions IF = 10 mA Tamb ≤ 25 °C [1] [2] [3] Min - Typ - Max 0.9 375 830 Unit V mW mW [1] [2] [3] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 2. Pinning information Table 2: Pin 1 2 Pinning Description cathode anode [1] Simplified outline Symbol 1 2 sym001 1 2 [1] The marking bar indicates the cathode. 3. Ordering information Table 3: Ordering information Package Name BZT52H-C2V4 to BZT52H-C75 [1] [1] Type number Description plastic surface mounted package; 2 leads Version SOD123F - The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4: Marking codes Marking code B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF Type number BZT52H-C8V2 BZT52H-C9V1 BZT52H-C10 BZT52H-C11 BZT52H-C12 BZT52H-C13 BZT52H-C15 BZT52H-C16 BZT52H-C18 BZT52H-C20 BZT52H-C22 BZT52H-C24 BZT52H-C27 Marking code BG BH BJ BK BL BM BN BP BQ BR BS BT BU Type number BZT52H-C30 BZT52H-C33 BZT52H-C36 BZT52H-C39 BZT52H-C43 BZT52H-C47 BZT52H-C51 BZT52H-C56 BZT52H-C62 BZT52H-C68 BZT52H-C75 Marking code BV BW BX BY BZ C1 C2 C3 C4 C5 C6 Type number BZT52H-C2V4 BZT52H-C2V7 BZT52H-C3V0 BZT52H-C3V3 BZT52H-C3V6 BZT52H-C3V9 BZT52H-C4V3 BZT52H-C4V7 BZT52H-C5V1 BZT52H-C5V6 BZT52H-C6V2 BZT52H-C6V8 BZT52H-C7V5 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 2 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IF IZSM PZSM Ptot Tj Tamb Tstg [1] [2] [3] Parameter forward current non-repetitive peak reverse current non-repetitive peak reverse power dissipation total power dissipation junction temperature ambient temperature storage temperature Conditions Min [1] Max 250 see Table 8, 9 and 10 40 375 830 150 +150 +150 Unit mA −65 −65 W mW mW °C °C °C Tamb ≤ 25 °C [2] [3] tp = 100 µs; square wave; Tj = 25 °C prior to surge Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6: Symbol Rth(j-a) Rth(j-sp) [1] [2] [3] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] [2] [3] Min - Typ - Max 330 150 70 Unit K/W K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Soldering point of cathode tab. 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 3 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 7. Characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol VF [1] Parameter forward voltage Conditions IF = 10 mA [1] Min - Typ - Max 0.9 Unit V Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Table 8: Characteristics per type; BZT52H-C2V4 to BZT52H-C24 Tj = 25 °C unless otherwise specified. BZT52H -Cxxx Working voltage VZ (V); IZ = 5 mA Min 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 [1] [2] Maximum differential resistance rdif (Ω) IZ = 1 mA 400 500 500 500 500 500 500 500 480 400 150 80 80 80 100 70 70 90 110 110 170 170 220 220 220 IZ = 5 mA 85 83 95 95 95 95 95 78 60 40 10 8 10 10 10 10 10 10 10 15 20 20 20 25 30 Reverse current IR (µA) Max 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 Temperature coefficient SZ (mV/K); IZ = 5 mA Min −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 Max 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 Diode capacitance Cd (pF) [1] Max 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 Non-repetitive peak reverse current IZSM (A) [2] Max 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 Max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 f = 1 MHz; VR = 0 V tp = 100 µs; Tamb = 25 °C 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 4 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package Table 9: Characteristics per type; BZT52H-C27 to BZT52H-C51 Tj = 25 °C unless otherwise specified. BZT52H -Cxxx Working voltage VZ (V); IZ = 2 mA Min 27 30 33 36 39 43 47 51 [1] [2] Maximum differential resistance rdif (Ω) IZ = 1 mA 250 250 250 250 300 325 325 350 IZ = 5 mA 40 40 40 60 75 80 90 100 Reverse current IR (µA) Max 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 Temperature coefficient SZ (mV/K); IZ = 5 mA Min 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 Max 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 Diode Non-repetitive peak capacitance reverse current Cd (pF) [1] IZSM (A) [2] Max 50 50 45 45 45 40 40 40 Max 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 Max 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 f = 1 MHz; VR = 0 V tp = 100 µs; Tamb = 25 °C Table 10: Characteristics per type; BZT52H-C56 to BZT52H-C75 Tj = 25 °C unless otherwise specified. BZT52H -Cxxx Working voltage VZ (V); IZ = 2 mA Min 56 62 68 75 [1] [2] Maximum differential resistance rdif (Ω) Reverse current IR (µA) VR (V) 39.2 43.4 47.6 52.5 Temperature coefficient SZ (mV/K); IZ = 5 mA Min 52.2 58.8 65.6 73.4 Max 63.8 71.6 79.8 88.6 Diode Non-repetitive peak capacitance reverse current Cd (pF) [1] IZSM (A) [2] Max 40 35 35 35 Max 0.3 0.3 0.25 0.20 Max 60.0 66.0 72.0 79.0 IZ = 0.5 mA IZ = 2 mA Max 375 400 400 400 120 140 160 175 0.05 0.05 0.05 0.05 52.0 58.0 64.0 70.0 f = 1 MHz; VR = 0 V tp = 100 µs; Tamb = 25 °C 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 5 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 103 PZSM (W) mbg801 300 IF (mA) 200 mbg781 102 (1) 10 (2) 100 1 10−1 1 tp (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge) (2) Tj = 150 °C (prior to surge) Tj = 25 °C Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values mbg783 Fig 2. Forward current as a function of forward voltage; typical values 0 SZ (mV/K) 10 12 SZ (mV/K) mbg782 4V3 11 10 −1 3V9 3V6 5 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 −5 0 20 40 IZ (mA) 60 0 4 8 12 16 IZ (mA) 20 BZT52H-C2V4 to BZT52H-C4V3 Tj = 25 °C to 150 °C BZT52H-C4V7 to BZT52H-C12 Tj = 25 °C to 150 °C Fig 3. Temperature coefficient as a function of working current; typical values Fig 4. Temperature coefficient as a function of working current; typical values 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 6 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 8. Package outline 1.7 1.5 1 0.55 0.35 3.6 3.4 2.7 2.5 1.2 1.0 2 0.70 0.55 Dimensions in mm 0.25 0.10 04-11-29 Fig 5. Package outline SOD123F 9. Packing information Table 11: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 BZT52H-C2V4 to SOD123F BZT52H-C75 [1] 10000 -135 -115 For further information and the availability of packing methods, see Section 16. 10. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 6. Reflow soldering footprint SOD123F 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 7 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 11. Revision history Table 12: Revision history Release date 20051222 Data sheet status Product data sheet Change notice Doc. number 9397 750 15082 Supersedes Document ID BZT52H_SER_1 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 8 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 12. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 15082 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 22 December 2005 9 of 10 Philips Semiconductors BZT52H series Single Zener diodes in a SOD123F package 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Packing information. . . . . . . . . . . . . . . . . . . . . . Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 3 3 4 7 7 7 8 9 9 9 9 9 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 December 2005 Document number: 9397 750 15082 Published in The Netherlands