BZV49-C39

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BZV49 series Voltage regulator diodes Product specification Supersedes data of 1999 May 11 2005 Feb 03 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 1 W • Tolerance series: approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. PINNING PIN 1 2 3 anode cathode anode BZV49 series DESCRIPTION 1 3 DESCRIPTION Medium-power voltage regulator diodes in a SOT89 plastic SMD package. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75). 2 3 2 1 sym096 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BZV49-C2V4 to BZV49-C75 note 1 Note 1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range). MARKING TYPE NUMBER BZV49-C2V4 BZV49-C2V7 BZV49-C3V0 BZV49-C3Y3 BZV49-C3V6 BZV49-C3V9 BZV49-C4V3 BZV49-C4V7 BZV49-C5V1 BZV49-C5V6 MARKING CODE 2Y4 2Y7 3Y0 3Y3 3Y6 3Y9 4Y3 4Y7 5Y1 5Y6 TYPE NUMBER BZV49-C6V2 BZV49-C6V8 BZV49-C7V5 BZV49-C8V2 BZV49-C9V1 BZV49-C10 BZV49-C11 BZV49-C12 BZV49-C13 BZV49-C15 MARKING CODE 6Y2 6Y8 7Y5 8Y2 9Y1 10Y 11Y 12Y 13Y 15Y TYPE NUMBER BZV49-C16 BZV49-C18 BZV49-C20 BZV49-C22 BZV49-C24 BZV49-C27 BZV49-C30 BZV49-C33 BZV49-C36 BZV49-C39 MARKING CODE 16Y 18Y 20Y 22Y 24Y 27Y 30Y 33Y 36Y 39Y TYPE NUMBER BZV49-C43 BZV49-C47 BZV49-C51 BZV49-C56 BZV49-C62 BZV49-C68 BZV49-C75 − − − MARKING CODE 43Y 47Y 51Y 56Y 62Y 68Y 75Y − − − SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2005 Feb 03 2 Philips Semiconductors Product specification Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.3 PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 25 °C; note 1 tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.2 CONDITIONS − MIN. BZV49 series MAX. 250 UNIT mA see Table “Per type” − − −65 − 1 40 +150 150 W W °C °C MAX. 1 UNIT V 2005 Feb 03 3 Per type Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 MIN. −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 TYP. MAX. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 +1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 18.4 20.4 0 0 0 0 0 0 0 +0.2 +1.2 +2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAX. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 MAX. 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 15.4 16.8 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 2005 Feb 03 4 Philips Semiconductors Voltage regulator diodes BZV49CXXX BZV49 series Product specification 2005 Feb 03 5 Philips Semiconductors BZV49CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) VR (V) 18.9 21.0 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 Voltage regulator diodes MIN. 27 30 33 36 39 43 47 51 56 62 68 75 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 TYP. 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 80 80 80 90 130 150 170 180 200 215 240 255 MIN. 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 TYP. MAX. 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 2 2 2 2 2 2 2 2 2 2 2 2 MAX. 50 50 45 45 45 40 40 40 40 35 35 35 MAX. 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 BZV49 series Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth(j-tp) Rth(j-a) Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS BZV49 series VALUE 15 125 UNIT K/W K/W 103 handbook, halfpage PZSM (W) 102 MBG801 MBG781 handbook, halfpage 300 IF (mA) 200 (1) 10 (2) 100 1 10−1 1 duration (ms) 10 0 0.6 0.8 VF (V) 1 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.3 Forward current as a function of forward voltage; typical values. 2005 Feb 03 6 Philips Semiconductors Product specification Voltage regulator diodes BZV49 series handbook, full pagewidth 1 MBG927 SZ (mV/K) 0 4V3 3V9 3V6 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 IZ (A) 1 BZV49-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. MBG924 handbook, halfpage 10 SZ (mV/K) 10 5 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 0 −5 0 4 8 12 16 IZ (mA) 20 BZV49-C4V7 to C10. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. 2005 Feb 03 7 Philips Semiconductors Product specification Voltage regulator diodes PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads BZV49 series SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 2005 Feb 03 8 Philips Semiconductors Product specification Voltage regulator diodes DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BZV49 series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2005 Feb 03 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2005 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp10 Date of release: 2005 Feb 03 Document order number: 9397 750 13926