BZV55-B8V2

DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV55 series Voltage regulator diodes Product specification Supersedes data of 1999 May 21 2002 Feb 28 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24 ±2% (BZV55-B) and approx. ±5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. k BZV55 series columns a MAM215 The cathode is indicated by a yellow band. Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb ≤ 50 °C; note 1 tie-point ≤ 50 °C; note 1 CONDITIONS − MIN. MAX. 250 UNIT mA see Tables 1 and 2 A − − 400 500 40 +200 +200 mW mW W °C °C tp = 100 µs; square wave; − Tj = 25 °C prior to surge; see Fig.3 −65 −65 2002 Feb 28 2 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total BZV55-B and BZV55-C series Tj = 25 °C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZV55-B/C2V4 BZV55-B/C2V7 BZV55-B/C3V0 BZV55-B/C3V3 BZV55-B/C3V6 BZV55-B/C3V9 BZV55-B/C4V3 BZV55-B/C4V7 BZV55-B/C5V1 BZV55-B/C5V6 BZV55-B/C6V2 BZV55-B/C6V8 BZV55-B/C7V5 BZV55-B/C8V2 BZV55-B/C9V1 BZV55-B/C10 BZV55-B/C11 BZV55-B/C12 BZV55-B/C13 BZV55-B/C15 to BZV55-B/C75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom CONDITIONS IF = 10 mA; see Fig.4 BZV55 series MAX. 0.9 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 UNIT V µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA 2002 Feb 28 3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 1 Per type, BZV55-B/C2V4 to BZV55-B/C24 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. ±2% (B) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 4 4 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.60 21.60 23.50 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.40 22.40 24.50 Tol. approx. ±5% (C) MIN. 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) NON-REPETITIVE PEAK DIODE CAP. REVERSE CURRENT Cd (pF) at f = 1 MHz; IZSM (A) VR = 0 V at tp = 100 µs; Tamb = 25 °C 2002 Feb 28 2002 Feb 28 Philips Semiconductors Voltage regulator diodes Voltage regulator diodes BZV55Bxxx Cxxx at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 50 50 50 50 60 60 60 MAX. 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 MIN. −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 12.3 14.1 15.9 TYP. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 15.6 17.6 19.6 MAX. 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 MAX. BZV55 series BZV55 series Product specification This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 2 Per type, BZV55-B/C27 to BZV55-B/C75 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 2 mA Tol. ±2% (B) MIN. 27 30 33 36 39 43 47 51 56 62 68 75 5 5 26.50 29.40 32.30 35.30 38.20 42.10 46.10 50.00 54.90 60.80 66.60 73.50 MAX. 27.50 30.60 33.70 36.70 39.80 43.90 47.90 52.00 57.10 63.20 69.40 76.50 Tol. approx. ±5% (C) MIN. 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) NON-REPETITIVE PEAK DIODE CAP. REVERSE CURRENT Cd (pF) at f = 1 MHz; IZSM (A) VR = 0 V at tp = 100 µs; Tamb = 25 °C 2002 Feb 28 2002 Feb 28 Philips Semiconductors Voltage regulator diodes Voltage regulator diodes BZV55Bxxx Cxxx at IZtest = 0.5 mA at IZtest = 2 mA TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 TYP. 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 80 80 80 90 130 150 170 180 200 215 240 255 MIN. 18.0 20.6 23.3 26.0 28.7 31.4 35.0 38.6 42.2 58.8 65.6 73.4 TYP. 22.7 25.7 28.7 31.8 34.8 38.8 42.9 46.9 52.0 64.4 71.7 80.2 MAX. 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 50 50 45 45 45 40 40 40 40 35 35 35 MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 MAX. BZV55 series BZV55 series Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient see Fig.2 and note 1 CONDITIONS BZV55 series VALUE 300 380 UNIT K/W K/W 103 handbook, full pagewidth Rth j-a (K/W) δ=1 0.75 0.50 0.33 0.20 0.10 0.05 MBG930 102 10 0.02 0.01 ≤0.001 tp T tp T δ= 1 10−1 1 10 102 103 104 tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 2002 Feb 28 6 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series 103 handbook, halfpage PZSM (W) 102 MBG801 MBG781 handbook, halfpage 300 IF (mA) 200 (1) 10 (2) 100 1 10−1 1 duration (ms) 10 0 0.6 0.8 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Typical forward current as a function of forward voltage. MBG783 MBG782 handbook, halfpage 0 handbook, halfpage 10 12 SZ (mV/K) −1 4V3 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 3V9 3V6 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 0 20 40 IZ (mA) 60 −5 0 4 8 12 16 IZ (mA) 20 BZV55-B/C2V4 to BZV55-B/C4V3. Tj = 25 to 150 °C. BZV55-B/C4V7 to BZV55-B/C12. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. Fig.6 Temperature coefficient as a function of working current; typical values. 2002 Feb 28 7 Philips Semiconductors Product specification Voltage regulator diodes PACKAGE OUTLINE Hermetically sealed glass surface mounted package; 2 connectors BZV55 series SOD80C k (1) a D L H L DIMENSIONS (mm are the original dimensions) 0 UNIT mm D 1.60 1.45 H 3.7 3.3 L 0.3 1 scale 2 mm Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD80C REFERENCES IEC 100H01 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 2002 Feb 28 8 Philips Semiconductors Product specification Voltage regulator diodes DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BZV55 series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Feb 28 9 Philips Semiconductors Product specification Voltage regulator diodes NOTES BZV55 series 2002 Feb 28 10 Philips Semiconductors Product specification Voltage regulator diodes NOTES BZV55 series 2002 Feb 28 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp12 Date of release: 2002 Feb 28 Document order number: 9397 750 09386