BZX55-3V9

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low voltage stabilizers or voltage references. The diodes are type branded. BZX55 series DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZX55-C2V4 to BZX55-C75). handbook, halfpage k a MAM239 Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; note 1 Tamb = 50 °C; note 2 tp = 100 µs; square wave; Tj = 25 °C prior to surge tp = 8.3 ms; square wave; Tj ≤ 150 °C prior to surge Tstg Tj Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature ≤ 50 °C; lead length 8 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 100 mA; see Fig.4 MIN. − MAX. 1.0 V UNIT storage temperature junction temperature CONDITIONS MIN. − MAX. 250 UNIT mA see Table “Per type” − − − − −65 − 400 500 40 30 +200 200 mW mW W W °C °C 1996 Apr 26 2 1996 Apr 26 3 Philips Semiconductors Per type Tj = 25 °C; unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZ MAX. 600 600 600 600 600 600 600 600 550 450 200 150 50 50 50 70 70 90 110 110 170 170 220 at IZtest MAX. 85 85 85 85 85 85 80 70 50 30 10 8 7 7 10 15 20 20 26 30 40 50 55 TEST TEMP. COEFF. SZ (mV/K) CURRENT at IZtest IZtest (mA) see Figs 5 and 6 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) at at Tj = 25 °C Tj = 150 °C MAX. 50 10 4 2 2 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 MAX. 100 50 40 40 40 40 20 10 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.15 6.8 7.5 8.25 9.0 9.75 11.25 12.0 13.5 15.0 VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 Voltage regulator diodes BZX55CXXX MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 2.28 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 MAX. 2.56 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 TYP. −1.8 −1.9 −2.1 −2.2 −2.4 −2.4 −2.4 −1.4 −0.8 1.6 2.2 3.0 3.8 4.5 5.5 6.5 7.7 8.4 9.8 11.3 12.8 14.4 16.0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAX. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 BZX55 series Product specification 1996 Apr 26 4 Philips Semiconductors BZX55CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZ MAX. 220 220 220 220 220 220 500 600 700 700 1000 1000 1000 1500 at IZtest MAX. 55 80 80 80 80 80 90 90 110 125 135 150 200 250 TEMP. COEFF. TEST SZ (mV/K) CURRENT at IZtest IZtest (mA) see Figs 5 and 6 DIODE CAP. Cd (pF) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) at at Tj = 25 °C Tj = 150 °C MAX. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 MAX. 2 2 2 2 2 2 2 2 2 2 2 2 2 2 16.5 18.0 20.25 22.25 24.75 27.0 29.25 32.25 35.25 38.25 42.0 46.5 51.0 56.25 VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 1.25 1.25 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 Voltage regulator diodes MIN. 22 24 27 30 33 36 39 43 47 51 56 62 68 75 Note 20.8 22.8 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 TYP. 18.7 20.4 22.9 27.0 29.7 32.4 35.1 38.7 44.0 49.0 55.0 62.0 70.0 78.0 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 MAX. 60 55 50 50 45 45 45 40 40 40 40 35 35 35 1. For BZX55-C2V4 up to C36 IZ = 1 mA; for C39 up to C75 IZ = 0.5 mA. BZX55 series Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 8 mm BZX55 series VALUE 300 380 UNIT K/W K/W lead length max.; see Fig.2 and note 1 103 handbook, full pagewidth Rth j-a (K/W) δ=1 0.75 0.50 0.33 0.20 0.10 0.05 MBG930 102 10 0.02 0.01 ≤0.001 tp T tp T δ= 1 10−1 1 10 102 103 104 tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. 1996 Apr 26 5 Philips Semiconductors Product specification Voltage regulator diodes BZX55 series 103 handbook, halfpage PZSM (W) 102 MBG801 MBG781 handbook, halfpage 300 IF (mA) 200 (1) 10 (2) 100 1 10−1 1 duration (ms) 10 0 0.6 0.8 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Forward current as a function of forward voltage; typical values. MBG783 MBG782 handbook, halfpage 0 handbook, halfpage 10 12 SZ (mV/K) −1 4V3 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 3V9 3V6 6V2 5V6 5V1 4V7 −2 3V3 3V0 2V4 2V7 0 −3 0 20 40 IZ (mA) 60 −5 0 4 8 12 16 IZ (mA) 20 BZX55-C2V4 to C4V3. Tj = 25 to 150 °C. BZX55-C4V7 to C12. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. Fig.6 Temperature coefficient as a function of working current; typical values. 1996 Apr 26 6 Philips Semiconductors Product specification Voltage regulator diodes PACKAGE OUTLINE BZX55 series ndbook, full pagewidth 0.56 max 1.85 max 25.4 min 4.25 max 25.4 min MLA428 - 1 Dimensions in mm. Fig.7 SOD27 (DO-35). DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Apr 26 7