BZX585-B9V1

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Product specification Supersedes data of 2004 Mar 26 2004 Jun 22 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 300 mW • Two tolerance series: ± 2 % and ± 5 % • Working voltage range: nominal 2.4 V to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. DESCRIPTION Low-power voltage regulator diodes encapsulated in an ultra small SOD523 plastic SMD package. The diodes are available in the normalized E24 ± 2 % (BZX585-B) and ± 5 % (BZX585-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE PINNING PIN 1 2 BZX585 series handbook, halfpage 1 Top view The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523) and symbol. ,  cathode anode EA EB EC ED EE EF EG EH EK EL DESCRIPTION 2 MAM387 TYPE NUMBER MARKING CODE Marking codes for BZX585-B2V4 to BZX585-B75 BZX585-B2V4 BZX585-B2V7 BZX585-B3V0 BZX585-B3V3 BZX585-B3V6 BZX585-B3V9 BZX585-B4V3 BZX585-B4V7 BZX585-B5V1 BZX585-B5V6 C1 C2 C3 C4 C5 C6 C7 C8 C9 C0 BZX585-B6V2 BZX585-B6V8 BZX585-B7V5 BZX585-B8V2 BZX585-B9V1 BZX585-B10 BZX585-B11 BZX585-B12 BZX585-B13 BZX585-B15 E1 E2 E3 E4 E5 E6 E7 E8 E9 E0 BZX585-B16 BZX585-B18 BZX585-B20 BZX585-B22 BZX585-B24 BZX585-B27 BZX585-B30 BZX585-B33 BZX585-B36 BZX585-B39 BZX585-B43 BZX585-B47 BZX585-B51 BZX585-B56 BZX585-B62 BZX585-B68 BZX585-B75 EM EN EP ER ES ET EU 2004 Jun 22 2 Philips Semiconductors Product specification Voltage regulator diodes BZX585 series TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE Marking codes for BZX585-C2V4 to BZX585-C75 BZX585-C2V4 BZX585-C2V7 BZX585-C3V0 BZX585-C3V3 BZX585-C3V6 BZX585-C3V9 BZX585-C4V3 BZX585-C4V7 BZX585-C5V1 BZX585-C5V6 F1 F2 F3 F4 F5 F6 F7 F8 F9 F0 BZX585-C6V2 BZX585-C6V8 BZX585-C7V5 BZX585-C8V2 BZX585-C9V1 BZX585-C10 BZX585-C11 BZX585-C12 BZX585-C13 BZX585-C15 H1 H2 H3 H4 H5 H6 H7 H8 H9 H0 BZX585-C16 BZX585-C18 BZX585-C20 BZX585-C22 BZX585-C24 BZX585-C27 BZX585-C30 BZX585-C33 BZX585-C36 BZX585-C39 HA HB HC HD HE HF HG HH HK HL BZX585-C43 BZX585-C47 BZX585-C51 BZX585-C56 BZX585-C62 BZX585-C68 BZX585-C75 HM HN HP HR HS HT HU ORDERING INFORMATION TYPE NUMBER BZX585-B2V4 to BZX585-B75 BZX585-C2V4 to BZX585-C75 PACKAGE NAME − DESCRIPTION Plastic surface mounted package; 2 leads VERSION SOD523 − Plastic surface mounted package; 2 leads SOD523 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM PZSM Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab. PARAMETER continuous forward current non-repetitive peak reverse current non-repetitive peak reverse power dissipation total power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C prior to surge tp = 100 µs; square wave; Tamb = 25 °C prior to surge Tamb = 25 °C; note 1 CONDITIONS − MIN. MAX. 200 UNIT mA see Tables 1 and 2 − − −65 −65 40 300 +150 +150 W mW °C °C 2004 Jun 22 3 Philips Semiconductors Product specification Voltage regulator diodes ELECTRICAL CHARACTERISTICS Total BZX585-B and C series Tamb = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZX585-B/C2V4 BZX585-B/C2V7 BZX585-B/C3V0 BZX585-B/C3V3 BZX585-B/C3V6 BZX585-B/C3V9 BZX585-B/C4V3 BZX585-B/C4V7 BZX585-B/C5V1 BZX585-B/C5V6 BZX585-B/C6V2 BZX585-B/C6V8 BZX585-B/C7V5 BZX585-B/C8V2 BZX585-B/C9V1 BZX585-B/C10 BZX585-B/C11 BZX585-B/C12 BZX585-B/C13 BZX585-B/C15 to 75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 CONDITIONS IF = 10 mA; see Fig.2 IF = 100 mA; see Fig.2 0.9 1.1 BZX585 series MAX. V V µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA UNIT 2004 Jun 22 4 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 1 Per type BZX585-B/C2V4 to B/C24 Tamb = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. ± 5% (C) MIN. 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 MAX. 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 15 20 20 20 25 25 25 25 50 50 60 60 60 MAX. 400 450 500 500 500 500 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 2 2 2 2 2 2 2 3 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 10 10 10 10 10 10 10 15 40 45 55 55 70 −1.3 −1.4 −1.6 −1.8 −1.9 −1.9 −1.7 −1.2 −0.5 1.0 2.2 3.0 3.6 4.3 5.2 6.0 6.9 7.9 8.8 10.7 12.4 14.4 16.4 18.4 20.4 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see figs 3 AND 4) TYP. 450 440 425 410 390 370 350 325 300 275 250 215 170 150 120 110 110 105 105 100 90 80 70 60 55 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs MAX. 2004 Jun 22 5 Philips Semiconductors Voltage regulator diodes BZX585B or C Tol. ± 2% (B) XXX MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 9.50 10.78 11.22 10.45 11.76 12.24 11.40 12.74 13.26 12.35 14.70 15.30 14.25 15.68 16.32 15.20 17.64 18.36 17.10 19.60 20.40 19.00 21.56 22.44 20.90 23.52 24.48 22.80 BZX585 series Product specification This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 2 Per type BZX585-B/C27 to B/C75 Tamb = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 2 mA Tol. ± 2 % (B) MIN. 27 30 33 36 39 43 47 51 56 62 68 75 6 26.46 29.40 32.34 35.28 38.22 42.14 46.06 49.98 54.88 60.76 66.64 73.50 MAX. 27.54 30.60 33.66 36.72 39.78 43.86 47.94 52.02 57.12 63.24 69.36 76.50 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 2 mA TYP. 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 80 80 80 90 130 150 170 180 200 215 240 255 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see figs 3 and 4) TYP. 50 50 45 45 45 40 40 40 40 35 35 35 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs MAX. 2004 Jun 22 Philips Semiconductors Voltage regulator diodes BZX585B or C XXX Tol. ± 5 % (C) at IZtest = 0.5 mA MIN. 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 58.90 64.60 71.25 MAX. 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 65.10 71.40 78.75 TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) Notes 1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab. 2. Solder point at cathode tab. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to solder point note 1 note 2 CONDITIONS VALUE 350 65 UNIT K/W K/W BZX585 series Product specification Philips Semiconductors Product specification Voltage regulator diodes GRAPHICAL DATA BZX585 series MBG781 MLD444 handbook, halfpage 300 handbook, halfpage 0.5 IF (mA) 200 SZ (mV/K) 0 4V7 4V3 −0.5 2V4 2V7 −1 3V9 100 3V6 −1.5 3V3 3V0 0 0.6 0.8 VF (V) 1 −2 10−1 1 10 IZ (mA) 102 Tamb = 25 °C. BZX585-B/C2V4 to B/C4V7. Tamb = 25 °C to 150 °C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Temperature coefficient as a function of working current; typical values. handbook, halfpage 12 MLD445 SZ (mV/K) 8 15 13 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4 0 −4 10−1 1 10 IZ (mA) 102 BZX585-B/C5V1 to B/C15. Tamb = 25 °C to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. 2004 Jun 22 7 Philips Semiconductors Product specification Voltage regulator diodes PACKAGE OUTLINE Plastic surface mounted package; 2 leads BZX585 series SOD523 A c HE vMA D A 0 0.5 scale 1 mm 1 E bp 2 DIMENSIONS (mm are the original dimensions) UNIT mm A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1 (1) Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 98-11-25 02-12-13 2004 Jun 22 8 Philips Semiconductors Product specification Voltage regulator diodes DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BZX585 series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Jun 22 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp10 Date of release: 2004 Jun 22 Document order number: 9397 750 13303