BZX884-C36

厂商：
PHILIPS(飞利浦)
封装：
描述：
BZX884-C36 - Voltage regulator diodes - NXP Semiconductors

数据手册：

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BZX884-C36 数据手册

DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BZX884 series Voltage regulator diodes Product speciﬁcation Supersedes data of 2003 May 15 2004 Mar 26 Philips Semiconductors Product speciﬁcation Voltage regulator diodes FEATURES • Two tolerance series: ±2% and ±5% • Working voltage range: nominal 2.4 V to 75 V (E24 range) • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) • Boardspace 1.17 mm2 (approximately 10% of SOT23) • Power dissipation comparable to SOT23. APPLICATIONS • General regulation functions • ESD ultra high-speed switching • High frequency applications • Mobile communication, digital (still) cameras, PDAs and PCMCIA cards. MARKING TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER MARKING CODE handbook, halfpage BZX884 series DESCRIPTION Low-power voltage regulator diodes encapsulated in SOD882 leadless ultra small plastic packages. Bottom view MAM472 The marking bar indicates the cathode. Fig.1 Simplified outline (SOD882) and symbol. TYPE NUMBER MARKING CODE Marking codes for BZX884-B2V4 to BZX884-B75 BZX884-B2V4 BZX884-B2V7 BZX884-B3V0 BZX884-B3V3 BZX884-B3V6 BZX884-B3V9 BZX884-B4V3 BZX884-B4V7 BZX884-B5V1 BZX884-B5V6 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA BZX884-B6V2 BZX884-B6V8 BZX884-B7V5 BZX884-B8V2 BZX884-B9V1 BZX884-B10 BZX884-B11 BZX884-B12 BZX884-B13 BZX884-B15 AB AC AD AE AF AG AH AJ AK AL BZX884-B16 BZX884-B18 BZX884-B20 BZX884-B22 BZX884-B24 BZX884-B27 BZX884-B30 BZX884-B33 BZX884-B36 BZX884-B39 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA BZX884-B43 BZX884-B47 BZX884-B51 BZX884-B56 BZX884-B62 BZX884-B68 BZX884-B75 CB CC CD CE CF CG CH Marking codes for BZX884-C2V4 to BZX884-C75 BZX884-C2V4 BZX884-C2V7 BZX884-C3V0 BZX884-C3V3 BZX884-C3V6 BZX884-C3V9 BZX884-C4V3 BZX884-C4V7 BZX884-C5V1 BZX884-C5V6 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BZX884-C6V2 BZX884-C6V8 BZX884-C7V5 BZX884-C8V2 BZX884-C9V1 BZX884-C10 BZX884-C11 BZX884-C12 BZX884-C13 BZX884-C15 BB BC BD BE BF BG BH BJ BK BL BZX884-C16 BZX884-C18 BZX884-C20 BZX884-C22 BZX884-C24 BZX884-C27 BZX884-C30 BZX884-C33 BZX884-C36 BZX884-C39 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA BZX884-C43 BZX884-C47 BZX884-C51 BZX884-C56 BZX884-C62 BZX884-C68 BZX884-C75 DB DC DD DE DF DG DH 2004 Mar 26 2 Philips Semiconductors Product speciﬁcation Voltage regulator diodes ORDERING INFORMATION TYPE NUMBER BZX884-B2V4 to BZX884-B75 BZX884-C2V4 to BZX884-C75 PACKAGE NAME − DESCRIPTION BZX884 series VERSION SOD882 Leadless ultra small plastic package;2 terminals; body 1.0 x 0.6 x 0.5 mm Leadless ultra small plastic package;2 terminals; body 1.0 x 0.6 x 0.5 mm − SOD882 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot Tstg Tj Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 500 UNIT K/W PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C; prior to surge Tamb = 25 °C; note 1 CONDITIONS − MIN. MAX. 200 UNIT mA see Tables 1 and 2 − −65 − 250 +150 150 mW °C °C 2004 Mar 26 3 Philips Semiconductors Product speciﬁcation Voltage regulator diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed. SYMBOL VF IR PARAMETER forward voltage reverse current BZX884-B/C2V4 BZX884-B/C2V7 BZX884-B/C3V0 BZX884-B/C3V3 BZX884-B/C3V6 BZX884-B/C3V9 BZX884-B/C4V3 BZX884-B/C4V7 BZX884-B/C5V1 BZX884-B/C5V6 BZX884-B/C6V2 BZX884-B/C6V8 BZX884-B/C7V5 BZX884-B/C8V2 BZX884-B/C9V1 BZX884-B/C10 BZX884-B/C11 BZX884-B/C12 BZX884-B/C13 BZX884-B/C15 to 75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7 VZnom 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 CONDITIONS IF = 10 mA; see Fig.2 0.9 BZX884 series MAX. V µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA UNIT 2004 Mar 26 4 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 1 Per type BZX884-B/C2V4 to B/C24 Tj = 25 °C unless otherwise speciﬁed. WORKING VOLTAGE VZ (V) at IZ = 5 mA Tol. ±2% (B) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 5 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.78 11.76 12.74 14.70 15.68 17.64 19.60 21.56 23.52 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.22 12.24 13.26 15.30 18.32 18.36 20.40 22.44 24.48 Tol. ±5% (C) MIN. 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 MAX. 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 15 20 20 20 25 25 25 25 50 50 60 60 60 MAX. 400 450 500 500 500 500 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 at IZtest = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 2 2 2 2 2 2 2 3 10 10 15 20 25 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 10 10 10 10 10 10 10 15 40 45 55 55 70 −1.3 −1.4 −1.6 −1.8 −1.9 −1.9 −1.7 −1.2 −0.5 1.0 2.2 3.0 3.6 4.3 5.2 6.0 6.9 7.9 8.8 10.7 12.4 14.4 16.4 18.4 20.4 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 3 and 4) TYP. 450 440 425 410 390 370 350 325 300 275 250 215 170 150 120 110 110 105 105 100 90 80 70 60 55 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 2004 Mar 26 Philips Semiconductors Voltage regulator diodes BZX884B or C XXX BZX884 series Product speciﬁcation This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 2 Per type BZX884-B/C27 to B/C75 Tj = 25 °C unless otherwise speciﬁed. WORKING VOLTAGE VZ (V) at IZ = 2 mA Tol. ±2% (B) MIN. 27 30 33 36 39 43 47 51 56 62 68 75 6 26.46 29.40 32.34 35.28 38.22 42.14 46.06 49.98 54.88 60.76 66.64 73.50 MAX. 27.54 30.60 33.66 36.72 39.78 43.86 47.94 52.02 57.12 63.24 69.36 76.50 Tol. ±5% (C) MIN. 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 58.90 64.60 71.25 MAX. 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 65.10 71.40 78.75 DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest = 0.5 mA TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 at IZtest = 2 mA TYP. 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 80 80 80 90 130 150 170 180 200 215 240 255 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 3 and 4) TYP. 50 50 45 45 45 40 40 40 40 35 35 35 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 2004 Mar 26 Philips Semiconductors Voltage regulator diodes BZX884B or C XXX BZX884 series Product speciﬁcation Philips Semiconductors Product speciﬁcation Voltage regulator diodes GRAPHICAL DATA BZX884 series MBG781 MLD444 handbook, halfpage 300 handbook, halfpage 0.5 IF (mA) 200 SZ (mV/K) 0 4V7 4V3 −0.5 2V4 2V7 −1 3V9 100 3V6 −1.5 3V3 3V0 0 0.6 0.8 VF (V) 1 −2 10−1 1 10 IZ (mA) 102 Tj = 25 °C. BZX884-B/C2V4 to B/C4V7. Tj = 25 to 150 °C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Temperature coefficient as a function of working current; typical values. handbook, halfpage 12 MLD445 SZ (mV/K) 8 15 13 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4 0 −4 10−1 1 10 IZ (mA) 102 BZX884-B/C5V1 to B/C15. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. 2004 Mar 26 7 Philips Semiconductors Product speciﬁcation Voltage regulator diodes PACKAGE OUTLINE Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm BZX884 series SOD882 L L 1 2 b e1 A A1 E D (2) 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e1 0.65 L 0.30 0.22 0.5 scale 1 mm Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION SOD882 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-04-16 03-04-17 2004 Mar 26 8 Philips Semiconductors Product speciﬁcation Voltage regulator diodes SOLDERING Reflow soldering is the only recommended soldering method. DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BZX884 series This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). II Preliminary data Qualiﬁcation III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 9 2004 Mar 26 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/02/pp10 Date of release: 2004 Mar 26 Document order number: 9397 750 12713

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BZX884-C36

1. 物料型号： - BZX884系列，包括BZX884-B2V4至BZX884-B75和BZX884-C2V4至BZX884-C75。

2. 器件简介： - BZX884系列为低功耗电压调整二极管，工作电压范围为2.4V至75V（E24系列），封装在SOD882无引脚超小型塑料封装中。

3. 引脚分配： - SOD882封装，2个引脚，尺寸为1.0 x 0.6 x 0.5 mm。

4. 参数特性： - 连续正向电流（IF）：最大200 mA。 - 最大总功率耗散（P tot）：250 mW。 - 存储温度范围（Tstg）：-65至+150°C。 - 结温（Tj）：最高150°C。 - 热阻（Rth(-a)）：500 K/W。

5. 功能详解： - 一般调节功能、ESD超高速率开关、高频应用。 - 工作电压范围为名义上的2.4V至75V。 - 正向电压（VF）在10mA下测量，最大值为0.9V。 - 反向电流（IR）根据不同型号在特定反向电压（VR）下有不同的值。

6. 应用信息： - 移动通信、数字（静态）相机、个人数字助理（PDA）和PCMCIA卡等。

7. 封装信息： - SOD882封装，无引脚超小型塑料封装，2个引脚，封装体尺寸为1.0 x 0.6 x 0.5 mm。

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