IRF640

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 16 A g RDS(ON) ≤ 180 mΩ s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING PIN 1 2 3 tab gate drain1 source drain DESCRIPTION SOT78 (TO220AB) tab SOT404 (D2PAK) tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 200 200 ± 20 16 11 64 136 175 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin:2 of the SOT404 package August 1999 1 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 6.2 A; tp = 720 µs; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig;14 MIN. MAX. 580 UNIT mJ IAS - 16 A THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT 60 50 1.1 K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VGS = 10 V; ID = 8 A VGS = ± 20 V; VDS = 0 V VDS = 200 V; VGS = 0 V; VDS = 160 V; VGS = 0 V; Tj = 175˚C ID = 18 A; VDD = 160 V; VGS = 10 V Tj = 175˚C MIN. 200 178 2 1 TYP. MAX. UNIT 3 130 10 0.05 12 45 54 38 3.5 4.5 7.5 1850 170 91 4 6 180 522 100 10 250 63 12 35 V V V V V mΩ mΩ nA µA µA nC nC nC ns ns ns ns nH nH nH pF pF pF VDD = 100 V; RD = 5.6 Ω; VGS = 10 V; RG = 5.6 Ω Resistive load Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz August 1999 2 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 18 A; VGS = 0 V IF = 18 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 25 V TYP. MAX. UNIT 1.0 130 0.8 16 64 1.5 A A V ns µC August 1999 3 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S Normalised Power Derating, PD (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175 10 Transient thermal impedance, Zth j-mb (K/W) 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 P D tp D = tp/T 0.01 single pulse T 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 Pulse width, tp (s) Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Drain Current, ID (A) Tj = 25 C 18 16 14 12 10 8 6 4 2 4.5 V 5V 8V 5.5 V VGS = 10V 6V Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 Mounting Base temperature, Tmb (C) 150 175 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V) 1.6 1.8 2 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 10 V Peak Pulsed Drain Current, IDM (A) RDS(on) = VDS/ ID tp = 10 us 10 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS) 100 0.3 0.25 0.2 Drain-Source On Resistance, RDS(on) (Ohms) 4.5 V 5V Tj = 25 C 100 us 1 ms 10 ms 100 ms 5.5 V 0.15 0.1 0.05 6V 8V VGS = 10V D.C. 1 0.1 1 10 100 Drain-Source Voltage, VDS (V) 1000 0 0 2 4 6 8 10 12 Drain Current, ID (A) 14 16 18 20 Fig.3. Safe operating area ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID) August 1999 4 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S Drain current, ID (A) 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Gate-source voltage, VGS (V) 175 C VDS > ID X RDS(ON) 4.5 4 3.5 3 2.5 2 1.5 Tj = 25 C Threshold Voltage, VGS(TO) (V) maximum typical minimum 1 0.5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature, Tj (C) Fig.7. Typical transfer characteristics. ID = f(VGS) Transconductance, gfs (S) VDS > ID X RDS(ON) 20 175 C 15 Tj = 25 C Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Drain current, ID (A) 25 1.0E-01 1.0E-02 minimum typical 1.0E-03 10 1.0E-04 maximum 5 1.0E-05 0 0 2 4 6 8 10 12 14 Drain current, ID (A) 16 18 20 1.0E-06 0 0.5 1 1.5 2 2.5 3 3.5 Gate-source voltage, VGS (V) 4 4.5 5 Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID) Normalised On-state Resistance 2.9 2.7 2.5 2.3 2.1 1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction temperature, Tj (C) Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C Capacitances, Ciss, Coss, Crss (pF) 10000 Ciss 1000 Coss 100 Crss 10 0.1 1 10 Drain-Source Voltage, VDS (V) 100 Fig.9. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 ˚C = f(Tj) Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz August 1999 5 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S Source-Drain Diode Current, IF (A) 20 18 16 14 12 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Source-Drain Voltage, VSDS (V) 1 175 C Tj = 25 C 10 VGS = 0 V 100 Maximum Avalanche Current, IAS (A) 25 C Tj prior to avalanche = 150 C 0.1 0.001 0.01 0.1 Avalanche time, tAV (ms) 1 10 Fig.13. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.14. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tAV); unclamped inductive load August 1999 6 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78 E P A A1 q D1 D L2(1) L1 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0 (1) P 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g) Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to mounting instructions for SOT78 (TO220AB) package. 3. Epoxy meets UL94 V0 at 1/8". August 1999 7 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A E A1 mounting base D1 D HD 2 Lp 1 3 b c Q e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.40 14.80 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 Fig.16. SOT404 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". August 1999 8 Rev 1.100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF640, IRF640S MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.17. SOT404 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1999 9 Rev 1.100