KMZ52

DISCRETE SEMICONDUCTORS DATA SHEET M3D396 KMZ52 Magnetic Field Sensor Product specification 2000 Jun 09 Philips Semiconductors Product specification Magnetic Field Sensor FEATURES • High sensitivity • Integrated compensation coil • Integrated set/reset coil. APPLICATIONS • Navigation • Current and earth magnetic field measurement • Traffic detection. DESCRIPTION The KMZ52 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two magnetoresistive Wheatstone bridges physically offset from one another by 90° and integrated compensation and set/reset coils. The integrated compensation coils allow magnetic field measurement with current feedback loops to generate outputs that are independent of drift in sensitivity. The orientation of sensitivity may be set or changed (flipped) by means of the integrated set/reset coils. A short current pulse should be applied to the compensation coils to recover (set) the sensor after exposure to strong disturbing magnetic fields. A negative current pulse will reset the sensor to reversed sensitivity. By use of periodically alternated flipping pulses and a lock-in amplifier, the output is made independent of sensor and amplifier offset. PINNING SYMBOL +Iflip2 VCC2 GND2 +Icomp2 GND1 +Icomp1 −Icomp1 −VO1 +VO1 −Iflip1 +Iflip1 VCC1 −Icomp2 −VO2 +VO2 −Iflip2 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 KMZ52 DESCRIPTION flip coil bridge supply voltage ground compensation coil ground compensation coil compensation coil bridge output voltage bridge output voltage flip coil flip coil bridge supply voltage compensation coil bridge output voltage bridge output voltage flip coil 16 handbook, halfpage 9 pin 1 index 1 8 MBL201 Fig.1 Simplified outline SOT109-1. 2000 Jun 09 2 Philips Semiconductors Product specification Magnetic Field Sensor QUICK REFERENCE DATA SYMBOL VCC S Voffset Rbridge Rcomp Acomp Rflip Iflip tflip Notes bridge supply voltage sensitivity (uncompensated) offset voltage per supply voltage bridge resistance compensation coil resistance field factor of compensation coil; note 1 resistance of set/reset coil recommended flipping current for stable operation; note 2 flip pulse duration; note 2 PARAMETER MIN. − 12 −1.5 1 100 19 1 ±800 1 TYP. 5 16 0 2 170 22 2 3 KMZ52 MAX. 8 − +1.5 3 300 25 3 100 UNIT V mV/V ------------kA/m mV/V kΩ Ω A/m --------mA Ω µs ±1000 ±1200 mA 1. The compensation coil generates a field Hcomp = Acomp × Icomp in addition to the external field Hext. Sensor output will become zero if Hext = Hcomp. 2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not exceed the specified limit, see Chapter “Limiting values”. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCC Ptot Tstg Tamb Icomp Iflip (max) Pflip (max) Visol bridge supply voltage total power dissipation storage temperature maximum operating temperature maximum compensation current maximum flipping current maximum flipping power dissipation voltage between isolated systems: flip coil and Wheatstone bridge; compensation coil and Wheatsone bridge; flip coil and compensation coil PARAMETER − − −65 −40 − − − − MIN. 8 130 +150 −125 15 1500 50 60 MAX. V mW °C °C mA mA mW V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER terminal resistance from junction to ambient VALUE 105 UNIT K/W 2000 Jun 09 3 Philips Semiconductors Product specification Magnetic Field Sensor CHARACTERISTICS Tbridge = 25 °C; VCC1 = VCC2 = 5 V; unless otherwise specified. SYMBOL VCC H S TCS kSX TCVO Rbridge TCRbridge Voffset TCVoffset FH Rcomp Acomp Rflip TCRflip Iflip tflip Risol Visol Risol_dice f α β Notes PARAMETER bridge supply voltage field strength operating range in sensor plane sensitivity temperature coefficient of sensitivity sensitivity synchronism open circuit Ts = −25 to +125 °C note 2 CONDITIONS note 1 MIN. − −0.2 12 − 92 − 1 − −1.5 Tbridge = −25 to +125 °C; note 5 −3 − note 6 100 19 note 7 Tflip = −25 to +125 °C 1 − ±800 1 note 8 note 8 die 1 to die 2 note 9 note 9 1 − 1 0 88 −5 TYP. 5 − 16 0.31 100 −0.4 2 0.3 0 0 − 170 22 2 0.39 KMZ52 MAX. 8 +0.2 − − 108 − 3 − +1.5 +3 2 300 25 3 − UNIT V kA/m mV/V ------------kA/m %/K % %/K kΩ %/K mV/V µ V/V -----------K %FS Ω A/m --------mA Ω %/K temperature coefficient of output voltage VCC = 5 V; Tbridge = −25 to +125 °C bridge resistance temperature coefficient of bridge resistance offset voltage per supply voltage temperature coefficient of offset voltage hysteresis of output voltage resistance of compensation coil field factor of compensation coil resistance of set/reset coil temperature coefficient of resistance of set/reset coil recommended flipping current for stable operation flip pulse duration isolating resistance voltage between isolated systems isolating resistance between dice operating frequency angle die-to-die angle dice-to-package note 3 Tbridge = −25 to +125 °C; note 4 ±1000 ±1200 mA 3 − − − − 90 0 100 − 50 − 1 92 +5 µs MΩ V MΩ MHz deg deg 1. Due to the ratiometric output, the same supply voltage (VCC) must be applied to both dice in one KMZ52 device. 2. A comp1 × S 1 k SX = 100 × ----------------------------- % A comp2 × S 2 3. Bridge resistance die 1: between pins 5 and 12; bridge resistance die 2: between pins 2 and 3. 4. R bridge ( T ) – R bridge ( T ) 2 1 TCR bridge = 100 -------------------------------------------------------------R bridge ( T ) ( T 2 – T 1 ) 1 Where T 1 = – 25 ° C ; T 2 = 125 ° C . 2000 Jun 09 4 Philips Semiconductors Product specification Magnetic Field Sensor V offset ( T ) – V offset ( T ) 2 1 TCV offset = -------------------------------------------------------( T2 – T1 ) KMZ52 5. Where T 1 = – 25 ° C ; T 2 = 125 ° C . 6. Resistance of compensation coil die 1: between pins 6 and 7; resistance of compensation coil die 2: between pins 4 to 13. 7. Resistance of set/reset coil die 1: between pins 10 and 11; resistance of set/reset coil die 2: between pins 1 to 16. 8. Isolating resistance die 1: pins 7 and 8, 7 and 10 and 8 to 10; isolating resistance die 2: pins 1 to 2, 1 to 4 and 2 to 4. 9. Angle die-to-die: die 2 is turned by 90 ±2 degrees in anticlockwise direction with respect to die 1; angle dice-to-package: both dice in their fixed die-to-die position are tilted towards the package edges by 0 ±5 degrees. 2000 Jun 09 5 Philips Semiconductors Product specification Magnetic Field Sensor APPLICATION INFORMATION If the angle α between external magnetic field H and the long axis of the package is zero, H is parallel to the most sensitive direction of die 2 and perpendicular to the sensitive direction of die 1. A magnetic field turning clockwise (see Fig.2) thus yields an output proportional to cos α (Vout2) and an output proportional to sin α (Vout1). KMZ52 handbook, halfpage 16 9 Die 2 Die 1 y x 1 y H 8 MBL202 α x Fig.2 Angular relationship of dice. handbook, full pagewidth −Iflip2 16 +VO2 15 −VO2 14 −Icomp2 13 VCC1 12 +Iflip1 11 Z4 −Iflip1 10 +VO1 9 Z1 bridge 2 Z2 bridge 1 Z3 1 +Iflip2 2 VCC2 3 GND2 4 +Icomp2 5 GND1 6 +Icomp1 7 −Icomp1 8 −VO1 MBL203 Fig.3 Simplified circuit diagram. 2000 Jun 09 6 Philips Semiconductors Product specification Magnetic Field Sensor PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm KMZ52 SOT109-1 D E A X c y HE vMA Z 16 9 Q A2 A1 pin 1 index θ Lp 1 e bp 8 wM L detail X (A 3) A 0 2.5 scale 5 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 0.069 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 0.050 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.020 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.7 0.3 0.028 0.012 θ 0.010 0.057 0.004 0.049 0.019 0.0100 0.39 0.014 0.0075 0.38 0.244 0.041 0.228 8 0o o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-1 REFERENCES IEC 076E07 JEDEC MS-012 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 2000 Jun 09 7 Philips Semiconductors Product specification Magnetic Field Sensor DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) KMZ52 This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Preliminary specification Qualification Product specification Production Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2000 Jun 09 8 Philips Semiconductors Product specification Magnetic Field Sensor NOTES KMZ52 2000 Jun 09 9 Philips Semiconductors Product specification Magnetic Field Sensor NOTES KMZ52 2000 Jun 09 10 Philips Semiconductors Product specification Magnetic Field Sensor NOTES KMZ52 2000 Jun 09 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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