LLE18040X

DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input prematching ensures good stability and allows an easier design of wideband circuits. APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.7 GHz and 2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. 2 Top view LLE18040X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) 24 ICQ (A) 0.04 PL1 (W) ≥4 Gpo (dB) ≥8.5 ηC (%) Zi; ZL (Ω) Class AB (CW) 1.85 typ. 48 see Figs 8 and 9 PINNING - SOT437A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION handbook, 4 columns 1 c b 3 e MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1999 Apr 22 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Pi Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) input power total power dissipation storage temperature junction temperature soldering temperature t ≤ 10 s; 1 Tmb = 75 °C CONDITIONS open emitter RBE = 220 Ω open base open collector LLE18040X MIN. − − − − − MAX. 45 30 15 3 0.5 1 11 +150 200 235 UNIT V V V V A W W °C °C °C f = 1.85 GHz; VCE = 24 V; class AB − − −65 − − handbook, halfpage 1 MBD744 handbook, halfpage 15 MBD745 P tot IC (A) (W) 10 Ι ΙΙ 10 1 5 10 2 1 10 VCE (V) 0 10 2 0 50 100 150 200 T mb ( o C) Tmb ≤ 75 °C. (I) Region of permissible DC operation. (II) Permissible extension provided RBE ≤ 220 Ω. Fig.2 DC SOAR. Fig.3 Power derating curve. 1999 Apr 22 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 100 °C LLE18040X MAX. 8.5 0.2 UNIT K/W K/W CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO V(BR)CER V(BR)CBO V(BR)EBO hFE PARAMETER collector cut-off current collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS IE = 0; VCB = 20 V IC = 1 mA; RBE = 220 Ω IC = 1 mA IE = 1 mA IC = 0.25 A; VCE = 5 V − 30 45 3 15 MIN. MAX. 75 − − − 100 UNIT µA V V V APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) 24 VCE (V) 0.04 ICQ (A) PL1 (W) ≥4 typ. 5.5 Gpo (dB) ≥8.5 typ. 9.5 ηC (%) typ. 48 Zi; ZL (Ω) see Figs 8 and 9 Class AB (CW) 1.85 1999 Apr 22 4 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X handbook, full pagewidth 30 30 5.0 19.2 5.0 5.0 4.0 3.0 3.3 8.9 40 1.1 2.5 7.0 12.0 2.0 1.1 40 MBD756 C5 V BB C6 VCC F1 input C1 L2 L1 C4 output C2 C3 MBD757 The test circuit is split into two independent halves, each being 30 x 40 mm in size. Dimensions in mm. Substrate: Teflon fibreglass. Thickness: 0.4 mm. Permittivity: εr = 2.55. Fig.4 Prematching test circuit board. 1999 Apr 22 5 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X handbook, full pagewidth BIAS CIRCUIT PREMATCHING TEST CIRCUIT VCC R1 TR1 C5 R2 F1 P1 D1 R3 C7 L1 DUT L2 C6 D2 MEA600 Fig.5 Class AB bias circuit. List of components (see Figs 4 and 5). COMPONENT TR1 C1, C4 C2, C3 C5, C6 C7 D1 D2 L1 L2 P1 R1 R2 R3 F1 Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. DESCRIPTION transistor, BDT239 or equivalent DC blocking chip capacitor trimmer capacitor feedthrough bypass capacitor electrolytic capacitor diode BY239 or equivalent; 1 diode BY239 or equivalent; 2 4 turns 0.5 mm copper wire; internal diameter = 2 mm 3 turns 0.5 mm copper wire; internal diameter = 2 mm linear potentiometer resistor resistor resistor ferrite bead 4.7 kΩ 100 Ω, 0.25 W 1.5 kΩ, 0.25 W 56 Ω, 0.25 W Philips tube, 12NC = 4330 030 43081 4.2 x 2.2 x 3.2 mm (4B1) 100 pF 0.5 to 5.0 pF 1500 pF 10 µF, >30 V ATC 100A101kp Tekelec 727-1 SL Erie 1250-003 VALUE ORDERING INFORMATION 1999 Apr 22 6 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X handbook, halfpage 6 MBD752 handbook, halfpage 15 MBD753 PL (W) 4 I CQ = 40 mA 10 mA 3 mA 2 d im (dBc) 20 I CQ = 3 mA 25 30 35 10 mA 40 mA 40 0 0 0.2 0.4 0.6 0.8 P i (W) 1 45 0 1 2 4 3 Po (av) (W) VCE = 24 V; f1 = 1850 MHz; f2 = 1850.2 MHz. VCE = 24 V; f = 1850 MHz. Fig.7 Fig.6 Load power as a function of input power. Intermodulation distortion as a function of average output power. Input and optimum load impedances. VCE = 24 V; ICQ = 40 mA (see Figs 8 and 9); typical values at PL = PL1. f (GHz) 1.70 1.75 1.80 1.85 1.90 1.95 2.00 13.0 + j17.5 15.5 + j17.8 18.6 + j17.6 22.1 + j16.5 25.7 + j14.0 28.5 + j10.0 29.8 + j4.9 Zi (Ω) 5.2 + j6.4 5.0 + j6.0 4.8 + j5.5 4.7 + j5.1 4.5 + j4.6 4.4 + j4.2 4.3 + j3.8 ZL (Ω) 1999 Apr 22 7 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X 1 0.5 2 Zi 0.2 1.7 GHz +j 0 –j 10 0.2 5 0.2 0.5 1.85 GHz 10 2 GHz 2 5 10 5 ∞ 0.5 1 VCE = 24 V; Zo = 50 Ω; ICQ = 40 mA. 2 MBD755 Fig.8 Input impedance as a function of frequency; typical values at PL = PL1. 1 0.5 2 1.7 GHz 1.85 GHz 0.2 2 GHz ZL 5 10 +j 0 –j 10 0.2 5 0.2 0.5 2 5 10 ∞ 0.5 1 VCE = 24 V; Zo = 10 Ω; ICQ = 40 mA. 2 MBD754 Fig.9 Optimum load impedance as a function of frequency; typical values at PL = PL1. 1999 Apr 22 8 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads LLE18040X SOT437A D A F 3 D1 U1 q C B c 1 H U2 E1 E A p w1 M A M B M 2 b w2 M C M Q 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.98 4.32 b 1.66 1.40 c 0.13 0.08 D 6.48 6.22 0.255 0.245 D1 6.48 6.22 E 6.48 6.22 E1 6.48 6.22 F 1.65 1.40 H 17.02 16.00 0.67 0.63 p 3.43 3.18 0.135 0.125 Q 2.29 2.03 0.90 0.80 q 14.22 0.560 U1 19.02 18.77 0.749 0.739 U2 6.48 6.22 w1 0.25 w2 0.51 0.196 0.065 0.005 0.170 0.055 0.003 0.255 0.255 0.245 0.245 0.255 0.065 0.245 0.055 0.255 0.010 0.020 0.245 OUTLINE VERSION SOT437A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-29 1999 Apr 22 9 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values LLE18040X This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 22 10 Philips Semiconductors Product specification NPN microwave power transistor NOTES LLE18040X 1999 Apr 22 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125002/00/02/pp12 Date of release: 1999 Apr 22 Document order number: 9397 750 05719