LTE21015R

DISCRETE SEMICONDUCTORS DATA SH EET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell allows an easier design of circuits. APPLICATIONS • Common emitter class-A linear power amplifiers up to 2 GHz. 2 3 olumns LTE21015R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Top view Marking code: 436 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A f (GHz) 2 VCE (V) 16 IC (mA) 250 PL1 (W) ≥1.5 Gpo (dB) ≥8.5 Zi; ZL (Ω) see Figs 6 and 7 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature up to 0.2 mm from ceramic; t ≤ 10 s Tmb ≤ 75 °C CONDITIONS open emitter RBE = 250 Ω open base open collector − − − − − − −65 − − MIN. LTE21015R MAX. 40 20 16 3 450 7.5 +200 200 235 V V V V UNIT mA W °C °C °C handbook, halfpage 1 MGL060 handbook, halfpage 10 MGL061 Ptot IC (A) 0.16 (W) 8 6 10−1 4 Ι ΙΙ 2 10−2 1 10 16 VCER (V) 102 0 −50 0 100 Tmb (°C) 200 Tmb = 75 °C. (Ι) Region of permissible DC operation. (ΙΙ) Permissible extension provided RBE < 250 Ω. Ptot max = 7.5 W Fig.3 Fig.2 DC SOAR. Power dissipation derating as a function of mounting-base temperature. 1997 Feb 19 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO ICER IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 20 V; IE = 0 VCB = 40 V; IE = 0 VCE = 20 V; RBE = 270 Ω VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 250 mA − − − − 15 MIN. 1 PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS Tj = 70 °C note1 LTE21015R MAX. 12 0.7 UNIT K/W K/W MAX. 150 0.5 1.5 150 UNIT µA mA mA µA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class-A test circuit.(see Fig.4) MODE OF OPERATION Class-A (CW) Notes 1. IC and VCE regulated. 2. Load power for 1 dB compression of gain. 3. Linear gain. f (GHz) 2 VCC (V)(1) 16 IC (mA) (1) 250 PL1 (W) (2) ≥1.5 typ. 1.8 Gpo (dB) (3) ≥8.5 typ. 9.5 Zi; ZL (Ω) see Figs 6 and 7 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R handbook, full pagewidth 10.5 20 1.5 5 16 4 7.5 2.2 input 50 Ω 5 1.4 4 output 50 Ω 10 4 8 6.5 8 3 MSA099 Dimensions in mm. Substrate: Teflon fibreglass. Thickness: 0.8 mm. Permittivity: εr = 2.55. Fig.4 Narrowband test circuit. handbook, halfpage 3 MGL062 PL (W) 2 (1) (2) 1 0 0 0.1 0.2 0.3 PS (W) 0.4 VCE = 16 V; IC = 250 mA (regulated). In narrowband test circuit as shown in Fig.4 (1) Gpo = 9.5 dB. (2) PL1 = 1.8 W. Fig.5 Load power as a function of source power. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R 1 handbook, full pagewidth 0.5 4 3 0.2 2 1.5 +j 0 – j 1 0.2 0.5 1 2 2.5 3.5 2 4.2 GHz 5 Zi 10 5 10 ∞ 10 5 0.2 0.5 1 VCE = 16 V; Zo = 50 Ω; IC = 250 mA. 2 MCD629 Fig.6 Input impedance as a function of frequency for PL1; associated with optimum load impedance. 1 handbook, full pagewidth 0.5 2 0.2 ZL 2.5 2 1.5 5 1 GHz 10 +j 0 –j 3 0.2 3.5 4 4.2 0.2 5 0.5 1 2 5 10 ∞ 10 0.5 1 VCE = 16 V; Zo = 50 Ω; IC = 250 mA. 2 MCD628 Fig.7 Optimum load impedance as a function of frequency for PL1; associated with input impedance. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE LTE21015R handbook, full pagewidth 0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max 1.7 max 3.2 2.9 5.1 5.5 max 3.4 2 2.0 7.1 14.2 (1) 4.5 min MBC888 Dimensions in mm. Torque on screw: Max. 0.4 Nm Recommended screw: M2.5 Fig.8 SOT440A. 1997 Feb 19 7 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values LTE21015R This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistor NOTES LTE21015R 1997 Feb 19 9 Philips Semiconductors Product specification NPN microwave power transistor NOTES LTE21015R 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor NOTES LTE21015R 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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