LWE2015R

DISCRETE SEMICONDUCTORS DATA SH EET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. handbook, halfpage LWE2015R PINNING - SOT446A PIN 1 2 3 collector base emitter DESCRIPTION APPLICATIONS • Common emitter class-A amplifiers up to 2.3 GHz in CW conditions for military and professional applications. DESCRIPTION 2 1 c 3 b e MAM313 NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic studless package. Marking code: 411 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 2.3 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL1 (W) ≥1.2 Gpo (dB) ≥7.5 Zi (Ω) 3.5 + j11 ZL (Ω) 6.4 + j2 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature Tmb ≤ 75 °C CONDITIONS open emitter RBE = 70 Ω open base open collector − − − − − − −65 − at 0.1 mm from case; t ≤ 10 s − MIN. LWE2015R MAX. 35 20 16 3 450 6 +200 200 235 V V V V UNIT mA W °C °C °C handbook, halfpage 1 MGL005 8 Ptot (W) MGD972 IC (A) 6 (1) (2) 10−1 4 2 10−2 1 10 16 VCE (V) 102 0 0 50 100 150 200 Tmb (°C) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 70 Ω. Fig.2 DC SOAR. Fig.3 Power derating curve. 1997 Feb 19 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting-base CONDITIONS Tj = 75 °C LWE2015R MAX. 12 UNIT K/W CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE Ccb Cce Ceb PARAMETER collector cut-off current emitter cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS VCB = 25 V; IE = 0 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 230 mA VCB = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCE = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz − − − − − − MIN. − − 40 2 2 15 TYP. MAX. ≤ 10 ≤ 10 − − − − pF pF pF UNIT µA µA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class-A selective circuit; note 1. MODE OF OPERATION Class-A (CW) Note 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. f (GHz) 2.3 VCE (V) 16 IC (mA) 250 PL1 (W) ≥1.2 typ. 1.6 Gpo (dB) ≥7.5 typ. 8.1 Zi (Ω) 3.5 + j11 ZL (Ω) 6.4 + j2 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LWE2015R handbook, full pagewidth 30 mm 30 mm 40 mm 40 mm MCD655 PTFE fibreglass dielectric (εr = 2.54); thickness: 0.8 mm. Fig.4 Prematching test circuit board. handbook, halfpage 2 MGD985 PL (W) PL1 1 (1) (2) (3) 0 0 0.25 PS (W) 0.5 VCE = 16 V; IC = 250 mA (regulated). (1) 1.7 GHz. (2) 2 GHz. (3) 2.3 GHz. Fig.5 Load power as a function of source power; typical values. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor LWE2015R handbook, full pagewidth 1 0.5 zi 2 0.2 1.7 2 ZL 1 2 5 10 1.7 GHz 10 5 2.3 0 −j 10 0.2 5 0.2 0.5 2.3 GHz 2 +j ∞ 0.5 1 Zo = 10 Ω; PL1 = 1.6 W.Tmb = 25 °C. 2 MGL030 Fig.6 Input and optimum load impedances as functions of frequency; typical values. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE LWE2015R handbook, full pagewidth O 4.3 0.1 2.2 1.7 2.3 3 seating plane O 5.8 0.76 1 9.4 max 18.8 min 2 MBC665 2.9 Dimensions in mm. Fig.7 SOT446A. 1997 Feb 19 7 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values LWE2015R This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistor NOTES LWE2015R 1997 Feb 19 9 Philips Semiconductors Product specification NPN microwave power transistor NOTES LWE2015R 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor NOTES LWE2015R 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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