MB2623BB

INTEGRATED CIRCUITS MB2623 16-bit transceiver with dual enable, non-inverting (3-State) Product specification Supersedes data of 1993 Aug 24 IC23 Data Handbook 1998 Jan 16 Philips Semiconductors Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 FEATURES • Two 8-bit bidirectional bus interfaces • 3-State buffers • Power-up 3-State • Multiple VCC and GND pins minimize switching noise • Output capability: +64mA/–32mA • Latch-up protection exceeds 500mA per Jedec Std 17 • ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200 V per Machine Model DESCRIPTION The MB2623 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The MB2623 is a 16-bit transceiver featuring non-inverting 3-State bus compatible outputs in both send and receive directions. The MB2623 is designed for asynchronous two-way communication between data buses. The control function implementation allows for maximum flexibility in timing. This device allows data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic levels at the Enable inputs (nOEBA and nOEAB). The Enable inputs can be used to disable the device so that the buses are effectively isolated. • Inputs are disabled during 3-State mode QUICK REFERENCE DATA SYMBOL tPLH tPHL CIN CI/O ICCZ PARAMETER Propagation delay nAx to nBx, or nBx to nAx Input capacitance I/O capacitance Total supply current CONDITIONS Tamb = 25°C; GND = 0V CL = 50pF; VCC = 5V VI = 0V or VCC VO = 0V or VCC; 3-State Outputs disabled; VCC =5.5V TYPICAL 3.2 3.1 4 7 50 UNIT ns pF pF µA ORDERING INFORMATION PACKAGES 52–pin plastic Quad Flat Pack TEMPERATURE RANGE –40°C to +85°C OUTSIDE NORTH AMERICA MB2623 BB NORTH AMERICA MB2623 BB DWG NUMBER SOT379-1 LOGIC SYMBOL 1OEAB 1OEBA GND GND GND 1B3 1B2 1B1 1B0 1A0 1A1 1A2 1A3 PIN DESCRIPTION PIN NUMBER 41 40 39 V CC 38 1A4 37 1A5 36 GND 35 1A6 SYMBOL 1A0 – 1A7 2A0 – 2A7 FUNCTION Data inputs/outputs (A side) 52 51 VCC 1B4 1B5 GND 1 2 3 4 5 6 7 8 9 50 49 48 47 46 45 44 43 42 44, 43, 41, 40, 38, 37, 35, 34, 32, 31, 29, 28, 26, 25, 23, 22 48, 49, 51, 52, 2, 3, 5, 6, 8, 9, 11, 12, 14, 15, 17, 18 47, 19 45, 21 4, 7, 10, 16, 20, 24, 30, 33, 36, 42, 46, 50 1, 13, 27, 39 1B0 – 1B7 2B0 – 2B7 Data inputs/outputs (B side) Output enable inputs (active-High) Output enable inputs (active-Low) Ground (0V) Positive supply voltage 1B7 52-pin PQFP 34 1A7 33 GND 32 2A0 31 2A1 30 GND 29 2A2 28 2A3 27 V CC GND 2B0 2B1 GND 10 2B2 11 2B3 12 VCC 13 14 15 16 2B4 2B5 GND 17 18 19 20 2B6 2B7 GND 2OEBA 21 22 23 2A5 25 2A7 2A6 2A5 2OEBA GND 26 2A4 SB00104 1998 Jan 16 È È 1B6 1OEAB, 2OEAB 1OEBA, 2OEBA GND VCC 2 853–1575 18869 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 FUNCTION TABLE INPUTS nOEBA L H H L nOEAB L H L OUTPUTS nAx A=B Inputs Z nBx Inputs B=A Z B=A PIN CONFIGURATION 47 1OEAB 44 1A0 48 43 1A1 49 41 1A2 51 40 1A3 52 38 1A4 2 37 1A5 3 35 1A6 5 34 1A7 6 1B7 1B6 2A7 18 2B7 1B5 2A6 17 22 2B6 1B4 2A5 15 23 2B5 1B3 2A4 14 25 2B4 1B2 2A3 12 26 2B3 1B1 2A2 11 28 2B2 1B0 2A1 9 29 2B1 2A0 8 31 2B0 45 1OEBA 2OEAB 32 19 21 2OEBA H A=B H = High voltage level L = Low voltage level Z = High impedance “off” state SB00105 LOGIC SYMBOL (IEEE/IEC) 47 45 EN1 EN2 19 21 EN1 EN2 44 1 2 48 32 1 2 8 43 41 10 38 37 35 34 49 51 52 2 3 5 6 31 29 28 26 25 23 22 9 11 12 14 15 17 18 SB00106 1998 Jan 16 3 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 ABSOLUTE MAXIMUM RATINGS1, 2 SYMBOL VCC IIK VI IOK VOUT IOUT Tstg PARAMETER DC supply voltage DC input diode current DC input voltage3 VO < 0 output in Off or High state output in Low state VI < 0 CONDITIONS RATING –0.5 to +7.0 –18 –1.2 to +7.0 –50 –0.5 to +5.5 128 –65 to 150 UNIT V mA V mA V mA °C DC output diode current DC output voltage3 DC output current Storage temperature range NOTES: 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C. 3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER Min VCC VI VIH VIL IOH IOL ∆t/∆v Tamb DC supply voltage Input voltage High-level input voltage Low-level Input voltage High-level output current Low-level output current Input transition rise or fall rate operating free-air temperature range 0 –40 4.5 0 2.0 0.8 –32 64 10 +85 LIMITS Max 5.5 VCC V V V V mA mA ns/V °C UNIT 1998 Jan 16 4 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 DC ELECTRICAL CHARACTERISTICS LIMITS SYMBOL PARAMETER TEST CONDITIONS Tamb = +25°C Min VIK Input clamp voltage VCC = 4.5V; IIK = –18mA VCC = 4.5V; IOH = –3mA; VI = VIL or VIH VOH High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or VIH VCC = 4.5V; IOH = –32mA; VI = VIL or VIH VOL II Low-level output voltage Input leakage current IOFF IPU/IPD IIH + IOZH IIL + IOZL ICEX IO ICCH ICCL ICCZ ∆ICC Additional supply current per input pin2 Quiescent supply current Control pins Data pins VCC = 4.5V; IOL = 64mA; VI = VIL or VIH VCC = 5.5V; VI = GND or 5.5V VCC = 5.5V; VI = GND or 5.5V VCC = 0.0V; VO or VI ≤ 4.5V VCC = 2.0V; VO = 0.5V; VI = GND or VCC; VOE = VCC; VOE = GND VCC = 5.5V; VO = 2.7V; VI = VIL or VIH VCC = 5.5V; VO = 0.5V; VI = VIL or VIH VCC = 5.5V; VO = 5.5V; VI = GND or VCC VCC = 5.5V; VO = 2.5V VCC = 5.5V; Outputs High, VI = GND or VCC VCC = 5.5V; Outputs Low, VI = GND or VCC VCC = 5.5V; Outputs 3-State; VI = GND or VCC VCC = 5.5V; one input at 3.4V, other inputs at VCC or GND –50 2.5 3.0 2.0 Typ –0.9 2.9 3.4 2.4 0.42 ±0.01 ±5 ±5.0 ±5.0 5.0 –5.0 5.0 –100 50 48 50 0.5 0.55 ±1.0 ±100 ±50 ±100 50 –50 50 –180 100 60 100 1.5 –50 Max –1.2 2.5 3.0 2.0 0.55 ±1.0 ±100 ±50 ±100 50 –50 50 –180 100 60 100 1.5 Tamb = –40°C to +85°C Min Max –1.2 V V V V V µA µA µA µA µA µA µA mA µA mA µA mA UNIT Power-off leakage current Power-up/down 3-State output current 3-State output High current 3-State output Low current Output High leakage current Output current1 NOTES: 1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second. 2. This is the increase in supply current for each input at 3.4V. AC CHARACTERISTICS GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω LIMITS SYMBOL PARAMETER WAVEFORM Min tPLH tPHL tPZH tPZL tPHZ tPLZ Propagation delay An to Bn or Bn to An Output enable time to High and Low level Output disable time from High and Low level 1 2 2 1.2 1.2 1.5 1.7 1.5 1.4 Tamb = +25oC VCC = +5.0V Typ 3.2 3.1 4.8 5.4 4.7 4.2 Max 4.5 4.5 6.5 6.8 6.5 5.8 Tamb = -40 to +85oC VCC = +5.0V ±0.5V Min 1.2 1.2 1.5 1.7 1.5 1.4 Max 5.1 5.1 7.2 7.8 7.2 6.5 ns ns ns UNIT 1998 Jan 16 5 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 AC WAVEFORMS VM = 1.5V, VIN = GND to 3.0V nOEBA INPUT VM INPUT nOEAB INPUT VM VM VM tPZL tPLZ 3.5V tPHL tPLH OUTPUT VM tPZH tPHZ VOL + 0.3V VOL VOH VOH – 0.3V OUTPUT VM VM OUTPUT VM SB00044 0V Waveform 1. Waveforms Showing the Input to Output Propagation Delays SB00107 Waveform 2. Waveforms Showing the 3-State Output Enable and Disable Times TEST CIRCUIT AND WAVEFORM VCC 7.0V VIN PULSE GENERATOR RT D.U.T. CL RL POSITIVE PULSE 10% tW SWITCH POSITION TEST tPLZ tPZL All other SWITCH closed closed open VM = 1.5V Input Pulse Definition VOUT RL tW 90% VM 10% tTHL (tF) tTLH (tR) 90% VM Test Circuit for 3-State Outputs 90% VM 10% 0V 10% 0V tTLH (tR) tTHL (tF) AMP (V) VM AMP (V) 90% NEGATIVE PULSE DEFINITIONS RL = CL = RT = Load resistor; see AC CHARACTERISTICS for value. Load capacitance includes jig and probe capacitance; see AC CHARACTERISTICS for value. Termination resistance should be equal to ZOUT of pulse generators. MB FAMILY Amplitude INPUT PULSE REQUIREMENTS Rep. Rate tW 500ns tR 2.5ns tF 2.5ns 3.0V 1MHz SB00010 1998 Jan 16 6 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 tPLH vs Temperature (Tamb) CL = 50pF, 1 Output Switching nAx to nBx 6 5 4 ns 3 2 MIN 1 0 –55 –35 –15 5 25 °C tPHL vs Temperature (Tamb) CL = 50pF, 1 Output Switching nAx to nBx 7 6 5 4 3 2 MIN 1 0 –55 –35 –15 5 25 °C tPZH vs Temperature (Tamb) CL = 50pF, 1 Output Switching nOEAB to nBx or nOEBA to nAx 9 8 7 6 5 ns 4 3 0 2 1 0 –55 –35 –15 5 25 °C 45 65 85 105 125 MIN –1 –2 0 MAX 3 Offset in ns 4.5VCC 5.5VCC 2 1 5 4 45 65 85 105 125 –1 –2 0 4.5VCC 5.5VCC ns MAX 2 Offset in ns 1 0 4 3 45 65 85 105 125 –1 –2 0 4.5VCC 5.5VCC Offset in ns MAX 4 3 2 1 0 Adjustment of tPLH for Load Capacitance and # of Outputs Switching nAx to nBx 16 switching 8 switching 1 switching 50 100 pF 150 200 Adjustment of tPHL for Load Capacitance and # of Outputs Switching nAx to nBx 16 switching 8 switching 1 switching 50 100 pF 150 200 Adjustment of tPZH for Load Capacitance and # of Outputs Switching nOEAB to nBx or nOEBA to nAx 16 switching 8 switching 1 switching 50 100 pF 150 200 SB00108 1998 Jan 16 7 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 tPZL vs Temperature (Tamb) CL = 50pF, 1 Output Switching nOEAB to nBx or nOEBA to nAx 9 8 7 6 5 ns 4 3 2 1 0 –55 –35 –15 5 25 °C tPHZ vs Temperature (Tamb) CL = 50pF, 1 Output Switching nOEAB to nBx or nOEBA to nAx 9 8 7 6 5 ns 4 3 2 1 0 –55 –35 –15 5 25 °C tPLZ vs Temperature (Tamb) CL = 50pF, 1 Output Switching nOEAB to nBx or nOEBA to nAx 8 7 6 5 4.5VCC ns 4 3 2 1 0 –55 –35 –15 5 25 °C 45 65 85 105 125 MIN 5.5VCC MAX 6 5 4 Offset in ns 3 2 1 0 –1 –2 0 45 65 85 105 125 MIN 4.5VCC 5.5VCC Offset in ns MAX 6 5 4 3 2 1 0 –1 –2 0 45 65 85 105 125 –2 0 MIN MAX 3 4.5VCC 5.5VCC Offset in ns 2 1 0 –1 4 Adjustment of tPZL for Load Capacitance and # of Outputs Switching nOEAB to nBx or nOEBA to nAx 16 switching 8 switching 1 switching 50 100 pF 150 200 Adjustment of tPHZ for Load Capacitance and # of Outputs Switching nOEAB to nBx or nOEBA to nAx 16 switching 8 switching 1 switching 50 100 pF 150 200 Adjustment of tPLZ for Load Capacitance and # of Outputs Switching nOEAB to nBx or nOEBA to nAx 16 switching 8 switching 1 switching 50 100 pF 150 200 SB00109 1998 Jan 16 8 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 tTLH vs Temperature (Tamb) CL = 50pF, 1 Output Switching 4 9 8 7 6 3 ns Offset in ns 4.5VCC 5.5VCC 5 4 3 2 1 0 –1 –2 1 –55 –35 –15 5 25 °C 45 65 85 105 125 –3 0 Adjustment of tTLH for Load Capacitance and # of Outputs Switching 16 switching 8 switching 1 switching 2 50 100 pF 150 200 tTHL vs Temperature (Tamb) CL = 50pF, 1 Output Switching 3.0 5 4 2.5 Offset in ns 3 2 1 0 –1 1 –55 –35 –15 5 25 °C 45 65 85 105 125 –2 0 Adjustment of tTHL for Load Capacitance and # of Outputs Switching 16 switching 8 switching 1 switching ns 2.0 4.5VCC 5.5VCC 1.5 50 100 pF 150 200 VOHV and VOLP vs Load Capacitance VCC = 5V, VIN = 0 to 3V 4.0 3.5 3.0 2.5 2.0 volts 1.5 1.0 0.5 0.0 –0.5 –1 0 50 100 pF 150 200 125°C 25°C –55°C volts 3 2 1 0 –1 –2 0 125°C 25°C –55°C 6 5 4 VOHP and VOLV vs Load Capacitance VCC = 5V, VIN = 0 to 3V 125°C 25°C –55°C 125°C 25°C –55°C 50 100 pF 150 200 SB00110 1998 Jan 16 9 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 QFP52: plastic quad flat package; 52 leads (lead length 1.6 mm); body 10 x 10 x 2.0 mm SOT379-1 1998 Jan 16 10 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 NOTES 1998 Jan 16 11 Philips Semiconductors Product specification 16-bit transceiver with dual enable, non-inverting (3-State) MB2623 Data sheet status Data sheet status Objective specification Preliminary specification Product specification Product status Development Qualification Definition [1] This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Production [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 © Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. print code Document order number: Date of release: 05-96 9397-750-03513 Philips Semiconductors yyyy mmm dd 12