NE5517

INTEGRATED CIRCUITS NE5517/NE5517A/AU5517 Dual operational transconductance amplifier Product data Replaces NE5517/NE5517A dated 2001 Aug 03 2002 Dec 06 Philips Semiconductors Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10 dB signal-to-noise improvement referenced to 0.5% THD. The AU5517/NE5517 is suited for a wide variety of industrial and consumer applications. Constant impedance buffers on the chip allow general use of the AU5517/NE5517. These buffers are made of Darlington transistors and a biasing network that virtually eliminate the change of offset voltage due to a burst in the bias current IABC, hence eliminating the audible noise that could otherwise be heard in high quality audio applications. PIN CONFIGURATION N, D Packages IABCa 1 Da 2 +INa 3 16 15 14 13 12 11 10 9 IABCb Db +INb –INb VOb V+ INBUFFERb VOBUFFERb –INa 4 VOa 5 V– 6 INBUFFERa 7 VOBUFFERa 8 Top View SL00306 Figure 1. Pin Configuration FEATURES • Constant impedance buffers • ∆VBE of buffer is constant with amplifier IBIAS change • Excellent matching between amplifiers • Linearizing diodes • High output signal-to-noise ratio APPLICATIONS PIN DESIGNATION PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SYMBOL IABCa Da +INa –INa VOa V– INBUFFERa VOBUFFERa VOBUFFERb INBUFFERb V+ VOb –INb +INb Db IABCb NAME AND FUNCTION Amplifier bias input A Diode bias A Non-inverting input A Inverting input A Output A Negative supply Buffer input A Buffer output A Buffer output B Buffer input B Positive supply Output B Inverting input B Non-inverting input B Diode bias B Amplifier bias input B • Multiplexers • Timers • Electronic music synthesizers • Dolby™ HX Systems • Current-controlled amplifiers, filters • Current-controlled oscillators, impedances ORDERING INFORMATION DESCRIPTION 16-Pin Plastic Dual In-Line Package (DIP) 16-Pin Plastic Dual In-Line Package (DIP) 16-Pin Small Outline (SO) Package 16-Pin Small Outline (SO) Package TEMPERATURE RANGE 0 to +70 °C 0 to +70 °C 0 to +70 °C –40 to +125 °C ORDER CODE NE5517N NE5517AN NE5517D AU5517D DWG # SOT38-4 SOT38-4 SOT109-1 SOT109-1 Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. 2002 Dec 06 2 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 CIRCUIT SCHEMATIC V+ 11 D4 Q6 D6 Q14 Q10 Q12 7,10 Q13 8,9 Q7 Q11 2,15 D2 –INPUT 4,13 1,16 AMP BIAS INPUT Q4 Q5 D3 +INPUT 3,14 VOUTPUT 5,12 Q15 Q2 Q9 R1 Q1 D1 D5 Q8 Q16 D7 Q3 D8 V– 6 SL00307 Figure 2. Circuit Schematic CONNECTION DIAGRAM B AMP BIAS INPUT 16 B DIODE BIAS 15 B INPUT (+) 14 B INPUT (–) 13 B BUFFER INPUT 10 B BUFFER OUTPUT 9 B OUTPUT 12 V+ (1) 11 – B + + A – 1 AMP BIAS INPUT A 2 DIODE BIAS A 3 INPUT (+) A 4 INPUT (–) A 5 OUTPUT A 6 V– 7 BUFFER INPUT A 8 BUFFER OUTPUT A NOTE: 1. V+ of output buffers and amplifiers are internally connected. SL00308 Figure 3. Connection Diagram 2002 Dec 06 3 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 ABSOLUTE MAXIMUM RATINGS SYMBOL VS PD Supply voltage1 PARAMETER RATING 44 VDC or ±22 UNIT V Power dissipation, Tamb = 25 °C (still air)2 NE5517N, NE5517AN NE5517D, AU5517D 1500 1125 ±5 2 2 Indefinite 20 0 °C to +70 °C –40 °C to +125 °C +VS to –VS –65 °C to +150 °C 230 °C °C mA °C °C mW mW V mA mA VIN ID IABC ISC IOUT Tamb Differential input voltage Diode bias current Amplifier bias current Output short-circuit duration Buffer output current3 Operating temperature range NE5517N, NE5517AN AU5517D VDC Tstg Tsld DC input voltage Storage temperature range Lead soldering temperature (10 sec max) NOTES: 1. For selections to a supply voltage above ±22 V, contact factory 2. The following derating factors should be applied above 25 °C N package at 12.0 mW/°C D package at 9.0 mW/°C 3. Buffer output current should be limited so as to not exceed package dissipation. 2002 Dec 06 4 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 DC ELECTRICAL CHARACTERISTICS1 SYMBOL PARAMETER TEST CONDITIONS CONDITIONS AU5517/NE5517 Min Typ 0.4 VOS Input offset voltage ∆VOS/∆T VOS including diodes VOS IOS Input offset change Input offset current ∆IOS/∆T IBIAS Input bias current bias current ∆IB/∆T gM Forward transconductance transconductance gM tracking IOUT Peak output current Peak output voltage Positive Negative Supply current VOS sensitivity Positive Negative CMRR Common-mode rejection ration Common-mode range Crosstalk IIN RIN BW SR INBUFFER VOBUFFER Differential input current Leakage current Input resistance Open-loop bandwidth Slew rate Buffer input current Peak buffer output voltage ∆VBE of buffer Unity gain compensated 5 5 Refer to Buffer VBE test circuit 3 NE5517A Min Typ 0.4 0.3 7 0.5 0.1 0.1 0.001 0.4 1 0.01 7700 4000 3 350 300 +12 –12 9600 0.3 Max 2 5 2 2 3 0.6 5 7 1200 Max 5 5 5 0.6 5 8 1300 UNIT mV mV mV µV/°C mV mV µA µA/°C µA µA µA/°C µmho µmho dB µA µA µA V V Over temperature range IABC 5 µA Avg. TC of input offset voltage Diode bias current (ID) = 500 µA 5 µA ≤ IABC ≤ 500 µA Avg. TC of input offset current Over temperature range Avg. TC of input current Over temperature range RL = 0, IABC =5 µA RL = 0, IABC = 500 µA RL = 0 RL = ∞, 5 µA ≤ IABC ≤ 500 µA RL = ∞, 5 µA ≤ IABC ≤ 500 µA IABC = 500 µA, both channels ∆ VOS/∆ V+ ∆ VOS/∆ V– 80 ±12 Referred to input2 20 Hz < f < 20 kHz IABC = 0, input = ±4 V IABC = 0 (Refer to test circuit) 10 6700 5400 0.3 7 0.5 0.1 0.1 0.001 0.4 1 0.01 9600 0.3 350 300 +12 –12 5 500 650 5 500 7 650 VOUT ICC +14.2 –14.4 2.6 20 20 110 ±13.5 100 0.02 0.2 26 2 50 0.4 5 100 100 4 150 150 +14.2 –14.4 2.6 20 20 4 150 150 mA µV/V µV/V dB V dB 80 ±12 110 ±13.5 100 0.02 0.2 10 5 nA nA kΩ MHz V/µs 10 26 2 50 0.4 5 5 µA V mV 10 0.5 5 10 0.5 NOTES: 1. These specifications apply for VS = ±15 V, Tamb = 25 °C, amplifier bias current (IABC) = 500 µA, Pins 2 and 15 open unless otherwise specified. The inputs to the buffers are grounded and outputs are open. 2. These specifications apply for VS = ±15 V, IABC = 500 µA, ROUT = 5 kΩ connected from the buffer output to –VS and the input of the buffer is connected to the transconductance amplifier output. 3. VS = ±15, ROUT = 5 kΩ connected from Buffer output to –VS and 5 µA ≤ IABC ≤ 500 µA. 2002 Dec 06 5 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 TYPICAL PERFORMANCE CHARACTERISTICS Input Offset Voltage 5 4 INPUT OFFSET VOLTAGE (mV) 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 0.1µA 1µA 10µA 100µA 1000µA 0.1 0.1µA 1µA 10µA 100µA 1000µA 1 +25°C +125°C -55°C INPUT OFFSET CURRENT (nA) VS = ±15V +125°C 10 3 Input Bias Current VS = ±15V 10 4 Input Bias Current VS = ±15V 10 2 -55°C INPUT BIAS CURRENT (nA) 10 3 10 +25°C +125°C 10 2 -55°C 1 10 +25°C 0.1µA 1µA +125°C 10µA 100µA 1000µA AMPLIFIER BIAS CURRENT (IABC) AMPLIFIER BIAS CURRENT (IABC) AMPLIFIER BIAS CURRENT (IABC) 10 4 PEAK OUTPUT CURRENT ( µ A) Peak Output Current 5 VS = ±15V +125°C PEAK OUTPUT VOLTAGE AND COMMON-MODE RANGE (V) 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 Peak Output Voltage and Common-Mode Range VOUT LEAKAGE CURRENT (pA) VCMR VS = ±15V 10 5 Leakage Current (+)VIN = (–)VIN = VOUT = 36V 10 3 +25°C -55°C 10 4 RLOAD = ∞ Tamb = 25°C VCMR 10 2 10 3 0V 10 2 10 VOUT 10 -50°C -25°C 0°C 25°C 50°C 75°C100°C125°C 1 0.1µA 1µA 10µA 100µA 1000µA 0.1µA 1µA 10µA 100µA 1000µA AMPLIFIER BIAS CURRENT (IABC) AMPLIFIER BIAS CURRENT (IABC) AMBIENT TEMPERATURE (TA) Input Leakage TRANSCONDUCTANCE (gM) — ( µ ohm) 10 4 INPUT LEAKAGE CURRENT (pA) +125°C 10 3 10 5 gM 10 4 Transconductance mq m M PINS 2, 15 OPEN VS = ±15V 10 2 INPUT RESISTANCE (MEG Ω ) Input Resistance PINS 2, 15 OPEN 10 1 10 2 +25°C 10 10 3 -55°C 10 2 +25°C 10 +125°C 1 0.1 1 0 1 2 3 4 5 6 INPUT DIFFERENTIAL VOLTAGE 7 0.1µA 1µA 10µA 100µA 1000µA 0.01 0.1µA 1µA 10µA 100µA 1000µA AMPLIFIER BIAS CURRENT (IABC) AMPLIFIER BIAS CURRENT (IABC) SL00309 Figure 4. Typical Performance Characteristics 2002 Dec 06 6 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Amplifier Bias Voltage vs Amplifier Bias Current 2000 AMPLIFIER BIAS VOLTAGE (mV) 1800 1600 CAPACITANCE (pF) 1400 1200 1000 800 600 400 1 200 0 0.1µA 1 µA 10µA 100µA 1000µA 0 0.01 0.1µA 1µA 10µA 100µA 1000µA AMPLIFIER BIAS CURRENT (IABC) 1 10 100 1000 DIFFERENTIAL INPUT VOLTAGE (mVP-P) +125°C +25°C 5 4 3 2 CIN COUT -55°C 7 VS = ±15V 6 Tamb = +25°C OUTPUT DISTORTION (%) 10 Input and Output Capacitance 100 Distortion vs Differential Input Voltage RL = 10kΩ IABC = 1mA 1 0.1 AMPLIFIER BIAS CURRENT (IABC) Voltage vs Amplifier Bias Current 20 OUTPUT VOLTAGE RELATIVE TO 1 VOLT RMS (dB) 0 -20 -40 -60 -80 -100 OUTPUT NOISE 20kHz BW RL = 10kΩ VIN = 80mVP-P VIN = 40mVP-P OUTPUT NOISE CURRENT (pA/Hz) VS = ±15V 600 500 400 300 200 100 0 10 Noise vs Frequency IABC = 1mA IABC = 100µA 100 1k 10k FREQUENCY (Hz) 100k 0.1µA 1µA 10µA 100µA 1000µA IABC AMPLIFIER BIAS CURRENT (µA) SL00310 Figure 5. Typical Performance Characteristics (cont.) 2002 Dec 06 7 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) +36V +15V A 4, 13 4V – 11 5, 12 NE5517 1, 15 8, 9 7, 10 A 4, 13 – 11 5, 12 NE5517 1, 10 2, 15 2, 15 3, 14 + 6 3, 14 + 6 –15V Leakage Current Test Circuit V+ Differential Input Current Test Circuit V 50kΩ V– Buffer VBE Test Circuit Figure 6. Typical Performance Characteristics (cont.) SL00311 APPLICATIONS +15V 0.01µF INPUT 10k 3, 14 – 390pF 2, 15 NE5517 1.3k 4, 13 + 6 0.01µF 11 1, 16 62k 51Ω 7, 10 5, 12 8, 9 OUTPUT 5k –15V 10k –15V 0.001µF Unity Gain Follower Figure 7. Applications SL00312 2002 Dec 06 8 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 CIRCUIT DESCRIPTION The circuit schematic diagram of one-half of the AU5517/NE5517, a dual operational transconductance amplifier with linearizing diodes and impedance buffers, is shown in Figure 8. For the diodes and the input transistors that have identical geometries and are subject to similar voltages and temperatures, the following equation is true: ID ) IS 1 2(I B ) I O) 2 T KT + q In q In I 1 2(I B * I O) D * IS 2 ID 2 IB IO + IS for |I S| t 2 ID (6) 1. Transconductance Amplifier The transistor pair, Q4 and Q5, forms a transconductance stage. The ratio of their collector currents (I4 and I5, respectively) is defined by the differential input voltage, VIN, which is shown in equation 1. I5 KT V IN + q In I4 Where VIN is the difference of the two input voltages KT ≅ 26 mV at room temperature (300 °k). Transistors Q1, Q2 and diode D1 form a current mirror which focuses the sum of current I4 and I5 to be equal to amplifier bias current IB: I4 + I5 = IB (2) (1) The only limitation is that the signal current should not exceed ID. 3. Impedance Buffer The upper limit of transconductance is defined by the maximum value of IB (2 mA). The lowest value of IB for which the amplifier will function therefore determines the overall dynamic range. At low values of IB, a buffer with very low input bias current is desired. A Darlington amplifier with constant-current source (Q14, Q15, Q16, D7, D8, and R1) suits the need. If VIN is small, the ratio of I5 and I4 will approach unity and the Taylor series of In function can be approximated as KT KT I 5 * I 4 q In I 4 [ q I4 I5 and I4 ≅ I5 ≅ IB KT I 5 KT I 5 * I 4 2KT I 5 * I 4 + V IN q In I 4 [ q 1 2I + q I B B (3) APPLICATIONS Voltage-Controlled Amplifier In Figure 10, the voltage divider R2, R3 divides the input-voltage into small values (mV range) so the amplifier operates in a linear manner. (4) It is: I OUT + * V IN @ R3 R2 ) R3 @ gM; I 5 * I 4 + V IN IB q 2KT The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form three current mirrors that produce an output current equal to I5 minus I4. Thus: V IN I B q 2KT IB q V OUT + I OUT @ R L; A+ V OUT V IN + R3 R2 ) R3 @ gM @ R L + IO (5) (3) gM = 19.2 IABC (gM in µmhos for IABC in mA) 2KT proportional to IB. The term is then the transconductance of the amplifier and is Since gM is directly proportional to IABC, the amplification is controlled by the voltage VC in a simple way. When VC is taken relative to –VCC the following formula is valid: I ABC + (V C * 1.2V) R1 2. Linearizing Diodes For VIN greater than a few millivolts, equation 3 becomes invalid and the transconductance increases non-linearly. Figure 9 shows how the internal diodes can linearize the transfer function of the operational amplifier. Assume D2 and D3 are biased with current sources and the input signal current is IS. Since I4 + I5 = IB and I5 – I4 = I0, that is: I4 = (IB – I0), I5 = (IB + I0) The 1.2 V is the voltage across two base-emitter baths in the current mirrors. This circuit is the base for many applications of the AU5517/NE5517. 2002 Dec 06 9 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 V+ 11 D4 Q6 D6 Q14 Q10 Q12 7,10 Q13 8,9 Q7 Q11 2,15 D2 –INPUT 4,13 1,16 AMP BIAS INPUT Q4 Q5 D3 +INPUT 3,14 VOUTPUT 5,12 Q15 Q2 Q9 R1 Q1 D1 D5 Q8 Q16 D7 Q3 D8 V– 6 SL00313 Figure 8. Circuit Diagram of NE5517 +VS ID I ID 2 ID S 2 I0 + 2 I )I S I0 + I5 * I4 I4 D3 1/2ID Q4 IS IS 1/2ID IB –VS I5 D2 I5 S I B D Voltage-Controlled Resistor (VCR) Because an OTA is capable of producing an output current proportional to the input voltage, a voltage variable resistor can be made. Figure 13 shows how this is done. A voltage presented at the RX terminals forces a voltage at the input. This voltage is multiplied by gM and thereby forces a current through the RX terminals: RX = R ) RA gM ) R A *I where gM is approximately 19.21 µMHOs at room temperature. Figure 14 shows a Voltage Controlled Resistor using linearizing diodes. This improves the noise performance of the resistor. Voltage-Controlled Filters Figure 15 shows a Voltage Controlled Low-Pass Filter. The circuit is a unity gain buffer until XC/gM is equal to R/RA. Then, the frequency response rolls off at a 6dB per octave with the –3 dB point being defined by the given equations. Operating in the same manner, a Voltage Controlled High-Pass Filter is shown in Figure 16. Higher order filters can be made using additional amplifiers as shown in Figures 17 and 18. SL00314 Figure 9. Linearizing Diode Stereo Amplifier With Gain Control Figure 11 shows a stereo amplifier with variable gain via a control input. Excellent tracking of typical 0.3 dB is easy to achieve. With the potentiometer, RP, the offset can be adjusted. For AC-coupled amplifiers, the potentiometer may be replaced with two 510 Ω resistors. Voltage-Controlled Oscillators Figure 19 shows a voltage-controlled triangle-square wave generator. With the indicated values a range from 2 Hz to 200 kHz is possible by varying IABC from 1 mA to 10 µA. The output amplitude is determined by IOUT × ROUT. Please notice the differential input voltage is not allowed to be above 5 V. With a slight modification of this circuit you can get the sawtooth pulse generator, as shown in Figure 20. Modulators Because the transconductance of an OTA (Operational Transconductance Amplifier) is directly proportional to IABC, the amplification of a signal can be controlled easily. The output current is the product from transconductance×input voltage. The circuit is effective up to approximately 200 kHz. Modulation of 99% is easy to achieve. 2002 Dec 06 10 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 APPLICATION HINTS To hold the transconductance gM within the linear range, IABC should be chosen not greater than 1 mA. The current mirror ratio should be as accurate as possible over the entire current range. A current mirror with only two transistors is not recommended. A suitable current mirror can be built with a PNP transistor array which causes excellent matching and thermal coupling among the transistors. The output current range of the DAC normally reaches from 0 to –2 mA. In this application, however, the current range is set through RREF (10 kΩ) to 0 to –1 mA. I DACMAX + 2 @ V REF 5V +2@ + 1mA R REF 10kW VC +VCC R1 R4 = R2/ /R3 3 + 11 NE5517 R2 VIN 4 R3 – 6 IOUT RL RS 8 1 5 7 IABC INT +VCC VOUT INT –VCC TYPICAL VALUES: R1 = 47k R2 = 10k R3 = 200Ω R4 = 200Ω RL = 100k RS = 47k SL00315 Figure 10. +VCC 10k VIN1 RIN 1k RP +VCC 15k NE5517/A RD – 4 VC VIN2 30k RC 10k RIN 1k RP +VCC 15k RD – 13 IABC 1 RL 10k 5.1k 14 15 NE5517/A 12 6 RL 10k RS –VCC INT 9 VOUT2 + IABC 10 16 –VCC +VCC 8 VOUT1 3 + 11 INT +VCC SL00316 Figure 11. Gain-Controlled Stereo Amplifier 2002 Dec 06 11 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 RC VIN2 SIGNAL 30k 1 IABC +VCC 11 3 2 NE5517/A – 4 10k 6 –VCC RL 10k RS –VCC INT + 5 7 ID INT +VCC 15k VOS VIN1 CARRIER 1k 8 VOUT SL00317 Figure 12. Amplitude Modulator R +VCC 3 2 NE5517/A 5 – 4 200 200 –VCC RX C 8 R 100k 10k –VCC INT VOUT 7 + 11 IO 30k VC INT +VCC X + R ) RA gM @ RA SL00318 Figure 13. VCR +VCC +VCC 3 VOS RP 1k 4 –VCC 2 NE5517/A 11 1 30k VC ID INT +VCC 5 6 RX C 7 8 R 100k 10k –VCC INT SL00319 Figure 14. VCR with Linearizing Diodes 2002 Dec 06 12 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 1 +VCC VIN 100k 2 NE5517/A 5 – 4 200 RA 200 –VCC 6 150pF 7 C 3 + 11 30k VC INT +VCC IABC 8 VOUT R 100k 10k –VCC INT NOTE: f O + RA gM g(R ) RA) 2pC SL00320 Figure 15. Voltage-Controlled Low-Pass Filter 1 +VCC +VCC 100k 2 NE5517/A -VCC 4 1k RA 1k –VCC 5 – 6 0.005µF 7 C 3 + 11 30k VC INT +VCC IABC VOS NULL 8 VOUT R 100k 10k –VCC INT NOTE: f O + RA gM g(R ) RA) 2pC SL00321 Figure 16. Voltage-Controlled High-Pass Filter 15k +VCC +VCC VIN + NE5517/A – C 100pF 200 200 RA 200 -VCC NOTE: f O + R A gM (R ) R A) 2p C –VCC R 100k 10k RA 100k + NE5517/A – RA 200 10k 2C 200pF VC INT +VCC 100k VOUT –VCC INT SL00322 Figure 17. Butterworth Filter – 2nd Order 2002 Dec 06 13 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 1 +VCC +VCC 10k 3 2 NE5517/A – 6 800pF 1k 1k –VCC 20k 5.1k –VCC BANDPASS OUT + 14 11 5 7 20k 15 NE5517/A – 13 + 16 15k VC INT +VCC 12 10 LOW PASS VOUT 9 20k 800pF 5.1k –VCC INT SL00323 Figure 18. State Variable Filter 30k VC +VCC 4 – 11 1 NE5517/A 3 + 6 C 0.1µF 8 5 7 NE5517/A + 14 16 INT +VCC 13 – +VCC INT +VCC 12 10 47k 9 10k VOUT2 –VCC 20k –VCC VOUT1 –VCC INT GAIN CONTROL SL00324 Figure 19. Triangle-Square Wave Generator (VCO) IC 470k VC +VCC 4 + 11 1 IB +VCC INT +VCC 13 – 5 7 NE5517/A C 0.1µF 8 + 14 R2 30k –VCC 12 10 16 47k INT +VCC 30k 2 3 NE5517/A – 6 R1 30k –VCC 20k NOTE: (V V PK + –VCC VOUT1 I * 0.8) R 1 2V PK x C 2V PKxC C C T + T+ f It H L OSC 2V xC C R1 ) R2 IB I PK C tI VOUT2 INT B SL00325 Figure 20. Sawtooth Pulse VCO 2002 Dec 06 14 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4 2002 Dec 06 15 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 2002 Dec 06 16 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 REVISION HISTORY Rev _3 Date 20021206 Description Product data (9397 750 10796); type number AU5517 added. ECN 853–0887 29176 of 08 November 2002; supersedes Product data NE5517_NE5517A version 2 of 03 August 2001. • Type number AU5517 added. • “Description” section edited. _2 20010803 Product data (9397 750 09175); NE5517/NE5517A only; ECN 853–0887 26833 of 2001 Aug 03 . Modifications: 2002 Dec 06 17 Philips Semiconductor Product data Dual operational transconductance amplifier NE5517/NE5517A/ AU5517 Data sheet status Level I Data sheet status [1] Objective data Product status [2] [3] Development Definitions This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products—including circuits, standard cells, and/or software—described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2002 All rights reserved. Printed in U.S.A. Date of release: 12-02 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Document order number: 9397 750 10796 Philips Semiconductors 2002 Dec 06 18