NX3DV221GM

NX3DV221 High-speed USB 2.0 switch with enable Rev. 2 — 9 November 2011 Product data sheet 1. General description The NX3DV221 is a high-bandwidth switch designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch allows signal to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps). 2. Features and benefits           Wide supply voltage range from 2.3 V to 3.6 V Switch voltage accepts signals up to 5.5 V 1.8 V control logic at VCC = 3.6 V Low-power mode when OE is HIGH (2 A maximum) 6  (maximum) ON resistance 0.1  (typical) ON resistance mismatch between channels 6 pF (typical) ON-state capacitance High bandwidth (1.0 GHz typical) Latch-up performance exceeds 100 mA per JESD 78B Class II Level A ESD protection:  HBM JESD22-A114F Class 3A exceeds 8000 V  CDM JESD22-C101E exceeds 1000 V  HBM exceeds 12000 V for I/O to GND protection  Specified from 40 C to +85 C 3. Applications  Routes signals for USB 1.0, 1.1 and 2.0 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 4. Ordering information Table 1. Ordering information Package Temperature range NX3DV221GM 40 C to +85 C Name Description Version SOT1049-2 XQFN10U plastic extremely thin quad flatpackage; no leads; 10 terminals; UTLP based; body 2  1.55  0.5 mm Type number 5. Marking Table 2. Marking Marking code[1] x21 Type number NX3DV221GM [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram 8 1 D+ 1D+ D- 7 2 3 1D2D+ VCC CHARGE PUMP OE S 6 9 4 2D- CONTROLLOGIC 001aao078 Fig 1. Logic symbol NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 2 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 7. Pinning information 7.1 Pinning NX3DV221 VCC 1 10 1D+ 9 8 7 S D+ D- 1D2D+ 2 3 2D- 4 6 OE GND 5 001aao079 Transparent top view Fig 2. Pin configuration SOT1049-2 (XQFN10U) 7.2 Pin description Table 3. Symbol 1D+ 1D 2D+ 2D GND OE D D+ S VCC Pin description Pin 1 2 3 4 5 6 7 8 9 10 Description independent input or output independent input or output independent input or output independent input or output ground (0 V) output enable input (active LOW) common input or output common input or output select input supply voltage 8. Functional description Table 4. Input S L H X [1] Function table[1] Channel OE L L H D+ = 1D+; D = 1D D+ = 2D+; D = 2D switches off H = HIGH voltage level; L = LOW voltage level; X = don’t care. NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 3 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC VI VSW IIK ISK ISW ICC IGND Tstg Ptot [1] [2] [3] Parameter supply voltage input voltage switch voltage input clamping current switch clamping current switch current supply current ground current storage temperature total power dissipation Conditions S, OE input VI < 0.5 V VI < 0.5 V [1] [2] Min 0.5 0.5 0.5 50 50 100 65 Max +4.6 +7.0 +7.0 120 +100 +150 250 Unit V V V mA mA mA mA mA C mW Tamb = 40 C to +125 C [3] - The minimum input voltage rating may be exceeded if the input current rating is observed. The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed. For XQFN10U packages: above 132 C the value of Ptot derates linearly with 14.1 mW/K. 10. Recommended operating conditions Table 6. VCC VI VSW Tamb Recommended operating conditions Conditions S, OE input Min 2.3 0 0 40 Max 3.6 VCC 5.5 +85 Unit V V V C supply voltage input voltage switch voltage ambient temperature Symbol Parameter 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol VIH VIL VIK II Parameter HIGH-level input voltage LOW-level input voltage input clamping voltage input leakage current Conditions Min VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 2.7 V, 3.6 V; II = 18 mA S, OE input; VCC = 0 V, 2.7 V, 3.6; VI = GND to 3.6 V Tamb = 25 C Typ 0.01 Max Tamb =-40 C to +85 C Unit Min 0.46VCC 0.46VCC Max 0.25VCC 0.25VCC 1.8 1 V V V V V A NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 4 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol IOFF Parameter Conditions Min power-off per pin; VCC = 0 V leakage current VSW = 0 V to 2.7 V VSW = 0 V to 3.6 V VSW = 0 V to 5.25 V IS(OFF) OFF-state nD+ and nD- ports; leakage current see Figure 3 VCC = 2.7 V, 3.6 V ICC supply current VCC = 2.7 V, 3.6 V OE = GND OE = VCC (low power mode) ICC additional supply current S, OE input; one input at 1.8 V; other inputs at GND or VCC VCC = 2.7 V VCC = 3.6 V CI CS(OFF) CS(ON) input capacitance OFF-state capacitance ON-state capacitance VSW = GND or VCC; VCC = 2.5 V, 3.3 V VSW = GND or VCC; VCC = 2.5 V, 3.3 V VSW = GND or VCC; VCC = 2.5 V, 3.3 V 0.8 12.5 1 3 6 1.8 20 2.5 5.0 7.5 A A pF pF pF 18.5 0.01 30 2 A A 1 A Tamb = 25 C Typ 0.01 0.01 0.01 Max Tamb =-40 C to +85 C Unit Min Max 2.0 2.0 3.0 A A A 11.1 Test circuits VCC S Dn 2Dn 2 OE VIH VI switch 1 1Dn 1 switch IS 2 S VIL VIH OE VIH VIH VIL or VIH GND VO 001aao080 VI = 0 V; VO = 0 V to 5.25 V Fig 3. Test circuit for measuring OFF-state leakage current NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 5 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 11.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 5. Symbol RON Parameter ON resistance Conditions VCC = 2.3 V, 3.0 V see Figure 4 VI = 0 V; II = 30 mA VI = 2.4 V; II = 15 mA RON ON resistance VCC = 2.3 V, 3.0 V mismatch VI = 0 V; between channels II = 30 mA VI = 1.7 V; II = 15 mA RON(flat) ON resistance (flatness) VCC = 2.3 V, 3.0 V; VI = 0 V to VCC II = 30 mA II = 15 mA [1] [2] [3] Typical values are measured at Tamb = 25 C. Measured at identical VCC, temperature and input voltage. Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. [3] [2] Tamb = 40 C to +85 C Min Typ[1] Max Tamb = 40 C to +85 C Min Max Unit - 3.6 4.3 - - 6 7   - 0.1 0.1 - - -   - 0.8 0.7 - - -   11.3 ON resistance test circuit and waveforms VCC S Dn 2Dn 2 OE VIL VI V VSW switch 1 2 S VIL VIH OE VIL VIL VIL or VIH 1Dn 1 switch GND ISW 001aao081 RON = VSW / ISW. Fig 4. Test circuit for measuring ON resistance NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 6 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 5.0 RON (Ω) 4.5 001aao082 4.0 3.5 3.0 0 1 2 VI (V) 3 Fig 5. ON resistance as a function of input voltage 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9. Symbol tpd Parameter propagation delay Conditions Dn to nDn or nDn to Dn; see Figure 6 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V ten enable time S to Dn, nDn; see Figure 8 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V OE to Dn, nDn; see Figure 8 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V tdis disable time S to Dn, nDn; see Figure 8 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V OE to Dn, nDn; see Figure 8 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [3] [3] [3] [3] [2][3] Tamb = 25 C Min Typ[1] Max Tamb = 40 C to +85 C Min Max Unit - 0.25 0.25 - - - ns ns - - - - 50 30 ns ns - - - - 32 17 ns ns - - - - 23 12 ns ns - - - - 12 10 ns ns NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 7 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable Table 9. Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9. Symbol tsk(o) Parameter output skew time Conditions see Figure 7 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V tsk(p) pulse skew time see Figure 6 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [1] [2] [3] [4] [4] [4] Tamb = 25 C Min Typ[1] 0.1 0.1 0.1 0.1 Max - Tamb = 40 C to +85 C Min Max 0.2 0.2 0.2 0.2 Unit ns ns ns ns Typical values are measured at Tamb = 25 C and VCC = 2.5 V and 3.3 V respectively. The propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). tpd is the same as tPLH and tPHL. Guaranteed by design. 12.1 Waveforms, test circuit and graphs 800 mV input 400 mV 50% tPLH VOH output VOL 50% tPHL 001aao083 Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. tsk(p) = |tPHL  tPLH|. Fig 6. The data input to output propagation delay times and pulse skew time NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 8 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 800 mV input 400 mV tPLH(1) VOH output 1 VOL tsk(o) VOH output 2 VOL 50% tPLH(2) tPHL(2) 001aao084 50% tPHL(1) 50% tsk(o) Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. tsk(o) = |tPLH(1)  tPLH(2)| or |tPHL(1)  tPHL(2)|. Fig 7. Output skew time VI S, OE input GND ten output OFF to HIGH HIGH to OFF VOH VX GND tdis output HIGH to OFF OFF to HIGH VOH VX ten VX VX tdis VM VM GND 001aao085 Measurement points are given in Table 10. Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. Fig 8. Table 10. VCC Enable and disable times Measurement points Input VM 0.5VI VI 1. 8 V Output VX 0.9VOH Supply voltage 2.3 V to 3.6 V NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 9 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable VCC 1Dn Dn 2Dn OE VIL G VI VEXT = VCC RL CL RL CL GND 001aao086 Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. VI may be connected to S or OE. Fig 9. Table 11. VCC Test circuit for switching times Test data Input VI 1.8 V tr, tf  5 ns Load CL 50 pF RL 500  Supply voltage 2.3 V to 3.6 V + 0.5 V -0.5 V Time scale (0.25 ns/DIV) 001aao087 Fig 10. Eye-pattern 480 Mbps USB signal with no switch. NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 10 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable + 0.5 V -0.5 V Time scale (0.25 ns/DIV) 001aao088 Fig 11. Eye-pattern 480 Mbps USB signal with switch (normally closed path) + 0.5 V -0.5 V Time scale (0.25 ns/DIV) 001aao089 Fig 12. Eye-pattern 480 Mbps USB signal with switch (normally open path) NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 11 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf  5 ns; Tamb = 25 C. Symbol Parameter f(3dB) 3 dB frequency response Conditions RL = 50 ; see Figure 13 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V iso isolation (OFF-state) fi = 250 MHz; RL = 50 ; see Figure 14 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V Xtalk crosstalk between switches; fi = 250 MHz; RL = 50 ; see Figure 15 VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V [1] [2] fi is biased at 350 mV. Vi = 632 mV (p-p). [1][2] [1][2] [1][2] Min - Typ 1.0 1.0 38 38 Max - Unit GHz GHz dB dB - 40 40 - dB dB 12.3 Test circuits VCC S Dn 2Dn 2 OE VIL fi 350 mV switch 1Dn 1 switch RL S VIL VIH OE VIL VIL 1 2 VIL or VIH dB GND 001aao090 Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads 3 dB. Fig 13. Test circuit for measuring the frequency response when switch is in ON-state NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 12 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 350 mV RL VCC 350 mV switch RL S VIH VIL OE VIH VIH 1 2 VIL or VIH S Dn 1Dn 1 switch 2Dn 2 OE VIH fi dB GND 001aao091 Adjust fi voltage to obtain 0 dBm level at input. Fig 14. Test circuit for measuring isolation (OFF-state) VCC 350 mV 350 mV RL RL VIL or VIH S Dn 1Dn 1 2Dn 2 OE VIH GND 001aao092 50 Ω fi dB Fig 15. Test circuit for measuring crosstalk NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 13 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 13. Package outline XQFN10U: plastic extremely thin quad flat package; no leads; 10 terminals; UTLP based; body 2 x 1.55 x 0.5 mm SOT1049-2 D B A terminal 1 index area E A A1 detail X e2 L L1 5 C e v w 6 M M CAB C y1 C y 4 b 3 7 e1 e3 1/2 e1 2 8 1 9 terminal 1 index area 10 metal area must not be soldered X 0 scale DIMENSIONS (mm are the original dimensions) UNIT mm max nom min A 0.50 A1 0.05 0.03 0.00 b 0.30 0.23 0.15 D 1.65 1.55 1.45 E 2.1 2.0 1.9 e 0.58 e1 0.5 e2 1.16 e3 1.5 L 0.4 0.3 0.2 L1 0.15 0.08 0.00 2.5 mm v 0.1 w 0.05 y 0.1 y1 0.05 OUTLINE VERSION SOT1049-2 REFERENCES IEC --JEDEC MO-255 JEITA --- EUROPEAN PROJECTION ISSUE DATE 08-04-22 10-02-05 Fig 16. Package outline SOT1049-2 (XQFN10U) NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 14 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 14. Abbreviations Table 13. Acronym CDM CMOS ESD HBM MM Abbreviations Description Charged Device Model Complementary Metal Oxide Semiconductor ElectroStatic Discharge Human Body Model Machine Model 15. Revision history Table 14. Revision history Release date 20111109 Data sheet status Product data sheet Product data sheet Change notice Supersedes NX3DV221 v.1 Document ID NX3DV221 v.2 Modifications: NX3DV221 v.1 • Legal pages updated. 20110421 NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 15 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 16. Legal information 16.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. © NXP B.V. 2011. All rights reserved. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or NX3DV221 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 9 November 2011 16 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NX3DV221 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 9 November 2011 17 of 18 NXP Semiconductors NX3DV221 High-speed USB 2.0 switch with enable 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance test circuit and waveforms . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Waveforms, test circuit and graphs . . . . . . . . . 8 Additional dynamic characteristics . . . . . . . . . 12 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 November 2011 Document identifier: NX3DV221