PBLS4003V

PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1: Product overview Package Philips PBLS4003Y PBLS4003V SOT363 SOT666 JEITA SC-88 - Type number 1.2 Features s s s s s Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 2: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector-current (DC) collector-emitter saturation resistance collector-emitter voltage IC = −500 mA; IB = −50 mA open base [1] Conditions open base Min - Typ 440 Max −40 −500 700 Unit V mA mΩ TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO 50 V Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch Quick reference data …continued Parameter output current bias resistor 1 (input) bias resistor ratio Conditions Min 7 0.8 Typ 10 1 Max 100 13 1.2 Unit mA kΩ Table 2: Symbol IO R1 R2/R1 [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. Pinning information Table 3: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 1 2 3 001aab555 R1 R2 TR2 TR1 Simplified outline 6 5 4 Symbol 6 5 4 1 2 3 sym036 3. Ordering information Table 4: Ordering information Package Name PBLS4003Y PBLS4003V SC-88 Description plastic surface mounted package; 6 leads plastic surface mounted package; 6 leads Version SOT363 SOT666 Type number 4. Marking Table 5: Marking codes Marking code [1] S3* K3 Type number PBLS4003Y PBLS4003V [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 2 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Ptot Tstg Tj Tamb [1] Conditions open emitter open base open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C open emitter open base open collector [1] Min - Max −40 −40 −6 −500 −1 −50 −100 200 50 50 10 +40 −10 100 100 200 300 +150 150 +150 Unit V V V mA A mA mA mW V V V V V mA mA mW mW °C °C °C TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor output current peak collector current total power dissipation total power dissipation storage temperature junction temperature ambient temperature single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] −65 −65 Per device Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7: Symbol Per device Rth(j-a) thermal resistance from junction to ambient SOT363 SOT666 [1] [2] Thermal characteristics Parameter Conditions in free air [1] [1] [2] Min Typ Max Unit - - 416 416 K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 3 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 7. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = −40 V; IE = 0 A VCB = −40 V; IE = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A VCE = −2 V; IC = −10 mA VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA IC = −200 mA; IB = −10 mA IC = −500 mA; IB = −50 mA RCEsat VBEsat VBEon fT Cc collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = −500 mA; IB = −50 mA IC = −500 mA; IB = −50 mA VCE = −2 V; IC = −100 mA IC = −100 mA; VCE = −5 V; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA IC = 10 mA; IB = 0.5 mA [1] [1] [1] [1] Min 200 150 40 100 - Typ 440 300 - Max −100 −50 −100 −50 −130 −200 −350 700 −1.2 −1.1 10 Unit nA µA nA TR1; PNP low VCEsat transistor IEBO hFE mV mV mV mV mΩ V V MHz pF [1] [1] TR2; NPN resistor-equipped transistor ICBO ICEO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage 30 2.5 7 0.8 VCB = 10 V; IE = ie = 0 A; f = 1 MHz 1.1 1.8 10 1 100 1 50 400 150 0.8 13 1.2 2.5 pF mV V V kΩ nA µA µA µA IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc [1] 9397 750 15222 off-state input voltage VCE = 5 V; IC = 100 µA on-state input voltage VCE = 0.3 V; IC = 10 mA bias resistor 1 (input) bias resistor ratio collector capacitance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 4 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 600 (1) 006aaa388 −1 006aaa390 hFE VCEsat (mV) 400 (2) −10−1 (3) (1) (2) (3) 200 0 −10−1 −1 −10 −102 IC (mA) −103 −10−2 −10−1 −1 −10 −102 IC (mA) −103 VCE = −2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. TR1 (PNP): DC current gain as a function of collector current; typical values −1100 VBE (mV) −900 006aaa389 Fig 2. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values −1.1 VBEsat (V) −0.9 006aaa392 (1) (1) (2) −700 (2) −0.7 (3) (3) −500 −0.5 −300 −0.3 −100 −10−1 −1 −10 −102 IC (mA) −103 −0.1 −10−1 −1 −10 −102 IC (mA) −103 VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 4. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 5 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch IB (mA) = −30 IC −27 (A) −24 −21 −0.8 −18 −0.6 −1 006aaa394 103 RCEsat (Ω) 006aaa393 −15 −12 −9 −6 102 10 (1) (2) (3) −0.4 −3 −0.2 1 0 0 −1 −2 −3 −4 −5 VCE (V) 10−1 −10−1 −1 −10 −102 IC (mA) −103 Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig 6. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 103 RCEsat (Ω) 006aaa395 −1 006aaa391 VCEsat (mV) 102 −10−1 (1) (2) 10 (1) (2) 1 (3) (3) −10−2 −10−1 −1 −10 −102 IC (mA) −103 10−1 −10−1 −1 −10 −102 IC (mA) −103 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 7. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 6 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 103 hFE (1) (2) (3) 006aaa034 1 006aaa035 VCEsat (V) 102 10−1 (1) (2) (3) 10 1 10−1 1 10 IC (mA) 102 10−2 1 10 IC (mA) 102 VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 9. TR2 (NPN): DC current gain as a function of collector current; typical values 10 006aaa036 Fig 10. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 10 006aaa037 VI(on) (V) (1) (2) VI(off) (V) (1) 1 (3) 1 (2) (3) 10−1 10−1 1 10 IC (mA) 102 10−1 10−2 10−1 1 IC (mA) 10 VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 11. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 12. TR2 (NPN): Off-state input voltage as a function of collector current; typical values 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 7 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 8. Package outline 2.2 1.8 6 5 4 0.45 0.15 1.1 0.8 6 1.7 1.5 5 4 0.3 0.1 0.6 0.5 2.2 1.35 2.0 1.15 pin 1 index 1.7 1.5 1.3 1.1 pin 1 index 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 04-11-08 Dimensions in mm 1 0.5 1 2 3 0.27 0.17 0.18 0.08 04-11-08 Fig 13. Package outline SOT363 (SC-88) Fig 14. Package outline SOT666 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBLS4003Y PBLS4003V Package Description SOT363 SOT666 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel [1] [2] [3] [2] [3] Packing quantity 3000 4000 8000 10000 -115 -125 -115 -315 -135 -165 - For further information and the availability of packing methods, see Section 15. T1: normal taping T2: reverse taping 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 8 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 10. Revision history Table 10: Revision history Release date Data sheet status Change notice Product data sheet Doc. number Supersedes Document ID PBLS4003Y_PBLS4003V_2 20050714 Modifications: 9397 750 15222 PBLS4003Y_ PBLS4003V_1 • • • • • • • • Table 2: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’ Table 8: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’ Figure 4 and 6: conditions amended Figure 6: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’ Figure 8: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’ Figure 7 and 8: conditions amended Table 9: Packing method (2 mm pitch) for SOT666 added Section 14 “Trademarks”: added Product data sheet 9397 750 13457 - PBLS4003Y_PBLS4003V_1 20041206 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 9 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 10 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V 40 V PNP BISS loadswitch 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 July 2005 Document number: 9397 750 15222 Published in The Netherlands