PBLS6002D

PBLS6002D 60 V PNP BISS loadswitch Rev. 01 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features s s s s s Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) collector-emitter saturation resistance collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio IC = −1 A; IB = −100 mA open base Conditions open base [1] [2] Min - Typ 255 Max −60 −1 340 Unit V A mΩ TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO IO R1 R2/R1 [1] [2] 3.3 0.8 4.7 1 50 100 6.1 1.2 V mA kΩ Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 1 2 3 sym036 Simplified outline 6 5 4 Symbol 6 5 4 1 2 3 R1 R2 TR2 TR1 3. Ordering information Table 3: Ordering information Package Name PBLS6002D SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking codes Marking code F2 Type number PBLS6002D 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 2 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Conditions open emitter open base open collector [1] [2] [3] Min - Max −80 −60 −5 −700 −850 −1 −2 −300 −1 250 350 400 50 50 10 +30 −10 100 100 200 200 200 400 530 600 +150 150 +150 Unit V V V mA mA A A mA A mW mW mW V V V V V mA mA mW mW mW mW mW mW °C °C °C TR1; PNP low VCEsat transistor ICM IB IBM Ptot peak collector current base current (DC) peak base current total power dissipation single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [2] [3] - TR2; NPN resistor-equipped transistor VCBO VCEO VEBO VI collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation Tamb ≤ 25 °C [1] [2] [3] open emitter open base open collector −65 −65 Per device Ptot total power dissipation Tamb ≤ 25 °C [1] [2] [3] Tstg Tj Tamb [1] [2] [3] storage temperature junction temperature ambient temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 3 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 0.8 Ptot (W) 0.6 (1) (2) 006aaa461 0.4 (3) 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6: Symbol Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] Thermal characteristics Parameter Conditions Min Typ Max 312 236 208 105 Unit K/W K/W K/W K/W TR1; PNP low VCEsat transistor Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 4 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 103 Zth(j-a) (K/W) δ=1 0.75 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 006aaa462 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 006aaa463 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 5 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 103 Zth(j-a) (K/W) δ = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 006aaa464 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current DC current gain Conditions VCB = −60 V; IE = 0 A VCB = −60 V; IE = 0 A; Tj = 150 °C VCE = −60 V; VBE = 0 V Min 200 [1] Typ 350 230 160 −110 −135 −255 255 Max −100 −50 −100 −100 −175 −180 −340 340 Unit nA µA nA nA TR1; PNP low VCEsat transistor ICES IEBO hFE emitter-base cut-off current VEB = −5 V; IC = 0 A VCE = −5 V; IC = −1 mA VCE = −5 V; IC = −500 mA VCE = −5 V; IC = −1000 mA 150 100 - [1] VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA IC = −1000 mA; IB = −100 mA [1] mV mV mV mΩ V - [1] RCEsat VBEsat collector-emitter saturation resistance base-emitter saturation voltage IC = −1 A; IB = −100 mA IC = −1 A; IB = −50 mA [1] [1] −0.95 −1.1 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 6 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch Table 7: Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol VBEon td tr ton ts tf toff fT Parameter base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency IC = −50 mA; VCE =−10 V; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VCE = 5 V; IC = 20 mA IC = 10 mA; IB = 0.5 mA VCE = 5 V; IC = 100 µA VCE = 0.3 V; IC = 20 mA Conditions VCE = −5 V; IC = −1 A IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA [1] Min 150 Typ Max Unit V ns ns ns ns ns ns MHz −0.82 −0.9 11 30 41 205 55 260 185 - Cc collector capacitance - 9 15 pF TR2; NPN resistor-equipped transistor ICBO ICEO collector-base cut-off current collector-emitter cut-off current 30 2.5 3.3 0.8 VCB = 10 V; IE = ie = 0 A; f = 1 MHz 1.1 1.9 4.7 1 100 1 50 900 150 0.5 6.1 1.2 2.5 pF mV V V kΩ nA µA µA µA IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc emitter-base cut-off current VEB = 5 V; IC = 0 A DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 7 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 600 (1) 006aaa474 −1 006aaa475 hFE VCEsat (mV) 400 (2) −10−1 200 (3) (1) (2) (3) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values −1.0 VBE (V) −0.8 (1) Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values −1.1 VBEsat (V) −0.9 (1) 006aaa476 006aaa477 −0.7 −0.6 (2) (2) −0.5 (3) (3) −0.4 −0.3 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.1 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 8 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch −2.0 IC (A) −1.6 006aaa478 IB (mA) = −35.0 −31.5 −28.0 −24.5 −21.0 103 RCEsat (Ω) 006aaa479 −17.5 −14.0 −10.5 −7.0 102 −1.2 10 −0.8 −3.5 1 (1) (2) (3) −0.4 0.0 0 −1 −2 −3 −4 −5 VCE (V) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 103 RCEsat (Ω) 006aaa481 −1 006aaa480 VCEsat (V) 102 −10−1 (1) (2) 10 (1) (2) (3) 1 (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 9 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 103 hFE 006aaa030 1 006aaa031 (1) (2) (3) VCEsat (V) 102 10−1 (1) (2) (3) 10 1 10−1 1 10 IC (mA) 102 10−2 1 10 IC (mA) 102 VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values 10 006aaa032 Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 10 006aaa033 VI(on) (V) (1) VI(off) (V) (1) 1 (2) (3) 1 (2) (3) 10−1 10−1 1 10 IC (mA) 102 10−1 10−2 10−1 1 IC (mA) 10 VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 10 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 8. Test information − IB 90 % input pulse (idealized waveform) − I Bon (100 %) 10 % − I Boff − IC 90 % output pulse (idealized waveform) − I C (100 %) 10 % t td t on tr ts t off tf 006aaa266 Fig 17. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mgd624 IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 18. Test circuit for switching times 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 11 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 9. Package outline 3.1 2.7 6 5 4 0.6 0.2 1.1 0.9 3.0 2.5 1.7 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm 2 3 0.40 0.25 0.26 0.10 04-11-08 Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBLS6002D Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] For further information and the availability of packing methods, see Section 17. T1: normal taping T2: reverse taping [2] [3] Packing quantity 3000 -115 -125 10000 -135 -165 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 12 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 11. Soldering 1.95 solder lands 0.95 3.30 2.825 0.45 0.55 occupied ar solder past solder resis 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 20. Reflow soldering footprint 5.30 solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste MSC423 1.40 4.30 Dimensions in mm Fig 21. Wave soldering footprint 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 13 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 12. Revision history Table 9: Revision history Release date 20050623 Data sheet status Product data sheet Change notice Doc. number 9397 750 15197 Supersedes Document ID PBLS6002D_1 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 14 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 13. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 15 of 16 Philips Semiconductors PBLS6002D 60 V PNP BISS loadswitch 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2005 Document number: 9397 750 15197 Published in The Netherlands