PBSS306PZ

PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 01 — 20 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = −4 A; IB = −400 mA [1] Conditions open base Min - Typ 56 Max −100 −4.1 −8.2 80 Unit V A A mΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector 1 2 3 3 sym028 Simplified outline 4 Symbol 2, 4 1 3. Ordering information Table 3. Ordering information Package Name PBSS306PZ SC-73 Description Version plastic surface-mounted package with increased heatsink; SOT223 4 leads Type number 4. Marking Table 4. Marking codes Marking code S306PZ Type number PBSS306PZ PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 2 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [2] [3] Conditions open emitter open base open collector Min −65 −65 Max −100 −100 −5 −4.1 −8.2 0.7 1.7 2.0 150 +150 +150 Unit V V V A A W W W °C °C °C Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 2.5 Ptot (W) 2.0 (1) (2) 006aaa560 1.5 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 3 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Min - Typ - Max 179 74 63 15 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 103 Zth(j-a) (K/W) 102 006aaa561 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 10 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 4 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 102 Zth(j-a) (K/W) 10 006aaa562 δ=1 0.75 0.50 0.20 0.10 0.05 0.02 0.01 0.33 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 δ=1 Zth(j-a) (K/W) 10 0.10 0.05 0.02 1 0.01 0 0.75 0.50 0.20 0.33 006aaa563 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 5 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = −80 V; IE = 0 A VCB = −80 V; IE = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A VCE = −2 V; IC = −0.5 A VCE = −2 V; IC = −1 A VCE = −2 V; IC = −2 A VCE = −2 V; IC = −4 A VCEsat collector-emitter saturation voltage IC = −0.5 A; IB = −50 mA IC = −1 A; IB = −50 mA IC = −4 A; IB = −400 mA IC = −4.1 A; IB = −410 mA RCEsat VBEsat VBEon td tr ton ts tf toff fT Cc [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] Min 200 150 100 25 - Typ 300 260 175 40 −45 −90 −225 −230 56 Max −100 −50 −100 −65 −130 −320 −325 80 Unit nA µA nA IEBO hFE mV mV mV mV mΩ V V V ns ns ns ns ns ns MHz pF collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance IC = −4 A; IB = −400 mA IC = −1 A; IB = −100 mA IC = −4 A; IB = −400 mA VCE = −2 V; IC = −2 A VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A [1] [1] [1] −0.81 −0.9 −0.93 −1.05 −0.78 −0.85 15 185 200 150 175 325 100 50 80 VCE = −10 V; IC = −100 mA; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz - Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 6 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 600 hFE 006aaa645 (1) −14 IC (A) −12 −10 006aaa651 IB (mA) = −1015 −870 −580 −290 −725 −435 −145 400 (2) −8 −6 200 (3) −4 −2 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 0 −1 −2 −3 −4 −5 VCE (V) VCE = −2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 5. DC current gain as a function of collector current; typical values −1.2 VBE (V) −0.8 (1) (2) Fig 6. Collector current as a function of collector-emitter voltage; typical values −1.2 VBEsat (V) −0.8 006aaa649 006aaa646 (1) (2) −0.4 (3) −0.4 (3) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 7 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor −10 VCEsat (V) −1 006aaa647 −10 VCEsat (V) −1 006aaa648 −10−1 (1) (2) (3) −10−1 (1) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 103 RCEsat (Ω) 102 006aaa650 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 103 RCEsat (Ω) 102 006aaa652 10 10 1 (1) (2) (3) 1 (1) (2) (3) 10−1 10−1 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 8 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 8. Test information − IB 90 % input pulse (idealized waveform) − I Bon (100 %) 10 % − I Boff − IC 90 % output pulse (idealized waveform) − I C (100 %) 10 % t td t on tr ts t off tf 006aaa266 Fig 13. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mgd624 VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A Fig 14. Test circuit for switching times PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 9 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 9. Package outline 6.7 6.3 3.1 2.9 4 1.1 0.7 7.3 6.7 3.7 3.3 1.8 1.5 1 2.3 4.6 Dimensions in mm 2 3 0.8 0.6 0.32 0.22 04-11-10 Fig 15. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS306PZ [1] Package SOT223 Description 8 mm pitch, 12 mm tape and reel Packing quantity 1000 -115 4000 -135 For further information and the availability of packing methods, see Section 14. PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 10 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 11. Soldering 7.00 3.85 3.60 3.50 0.30 1.20 (4 ×) 4 7.40 3.90 4.80 7.65 1 2 3 1.20 (3 ×) 1.30 (3 ×) 5.90 6.15 solder lands occupied area solder resist solder paste Dimensions in mm sot223_fr Fig 16. Reflow soldering footprint 8.90 6.70 4 4.30 8.10 8.70 1 2 3 1.90 (2×) 1.10 7.30 transport direction during soldering solder lands occupied area solder resist Dimensions in mm sot223_fw Fig 17. Wave soldering footprint PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 11 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Release date 20060920 Data sheet status Product data sheet Change notice Supersedes Document ID PBSS306PZ_1 PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 12 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PBSS306PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 13 of 14 Philips Semiconductors PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 20 September 2006 Document identifier: PBSS306PZ_1