PBSS4140DPN

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PBSS4140DPN 40 V low VCEsat NPN/PNP transistor Product specification 2001 Dec 13 Philips Semiconductors Product specification 40 V low VCEsat NPN/PNP transistor FEATURES • 600 mW total power dissipation • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replaces two SOT23 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and muting • LCD backlighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). 6 handbook, halfpage 5 4 PBSS4140DPN QUICK REFERENCE DATA SYMBOL VCEO IC ICM TR1 TR2 RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX. 40 1 2 − −