PBSS4160DPN

PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 3 June 2004 Objective data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. 1.2 Features s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required. 1.3 Applications s Power management x DC-to-DC conversion x Supply line switching s Peripheral driver x Inductive load drivers (e.g. relays, buzzers and motors) x Driver in low supply voltage applications (e.g. lamps and LEDs). 1.4 Quick reference data Table 1: Symbol VCEO IC ICRP RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance Conditions Min Typ Max NPN 60 1 2 250 PNP −60 −1 −1.5 330 V A A mΩ Unit Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1, 4 2, 5 6, 3 Discrete pinning Description emitter TR1; TR2 base TR1; TR2 collector TR1; TR2 TR1 1 2 3 SOT457 Simplified outline 6 5 4 Symbol 6 5 4 TR2 1 2 sym019 3 3. Ordering information Table 3: Ordering information Package Name PBSS4160DPN Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking Marking code [1] B4 Type number PBSS4160DPN [1] Made in Malaysia. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 2 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current t = 1 ms or limited by Tj(max) Conditions open emitter open base open collector Min Max 80 60 5 1 2 Unit V V V A A Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICRP repetitive peak collector current NPN PNP [1] [1] - 2 1.5 300 1 310 370 1.1 150 +150 +150 600 A A mA A mW mW W °C °C °C mW IB IBM Ptot base current (DC) peak base current total power dissipation tp ≤ 300 µs; δ ≤ 0.02 Tamb ≤ 25 °C [2] [3] [1] −65 −65 Tj Tamb Tstg Per device Ptot [1] [2] [3] junction temperature operating ambient temperature storage temperature total power dissipation Tamb ≤ 25 °C [3] - Device mounted on a ceramic circuit board, Al2O3, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] Typ 340 110 Unit K/W K/W Per transistor [1] [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic circuit board, Al2O3, standard footprint. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 3 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current base-emitter saturation voltage base-emitter turn-on voltage transition frequency Conditions VCB = 60 V; IE = 0 A VCB = 60 V; IE = 0 A; Tj = 150 °C VCE = 60 V; VBE = 0 V VEB = 5 V; IC = 0 A IC = 1 A; IB = 50 mA VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA RCEsat Cc TR2 (PNP) hFE DC current gain VCE = −5 V; IC = −1 mA VCE = −5 V; IC = −500 mA VCE = −5 V; IC = −1 A VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −100 mA RCEsat Cc equivalent on-resistance collector capacitance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [1] [1] [1] [1] [1] [1] [1] [1] Min 150 Typ 0.95 0.82 220 Max 100 50 100 100 1.1 0.9 - Unit nA µA nA nA V V MHz Per transistor unless otherwise specified; for the PNP transistor with negative polarity ICES IEBO VBEsat VBEon fT TR1 (NPN) hFE DC current gain 250 200 100 - 400 350 150 90 110 200 200 5.5 110 140 250 250 10 mV mV mV mΩ pF equivalent on-resistance collector capacitance IC = 1 A; IB = 100 mA VCB = 10 V; IE = Ie = 0 A; f = 1 MHz 200 150 100 - 350 250 160 −110 −120 −220 220 9 −160 −175 −330 330 15 mV mV mV mΩ pF IC = −1 A; IB = −100 mA VCB = −10 V; IE = Ie = 0 A; f = 1 MHz [1] 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 4 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 800 hFE 600 (1) mle130 1.2 VBE (V) (1) mle133 0.8 (2) (2) (3) 400 (3) 0.4 200 0 10−1 1 10 102 103 104 IC (mA) 0 10−1 1 10 102 103 104 IC (mA) TR1 (NPN) VCE = 5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 1. DC current gain as a function of collector current; typical values. mle135 Fig 2. Base-emitter voltage as a function of collector current; typical values. mle104 1 VCEsat (V) 10−1 1 VCEsat (V) 10−1 (2) (1) 10−2 (3) (1) (3) (2) 10−3 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) TR1 (NPN) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 3. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 4. Collector-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 5 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 1 VCEsat (V) mle129 1.2 VBEsat (V) mle134 (1) (2) 0.8 (1) (3) 10−1 (2) 0.4 10−2 10−1 1 10 102 103 104 IC (mA) 0 10−1 1 10 102 103 104 IC (mA) TR1 (NPN) Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. TR1 (NPN) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 6. Base-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 6 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 2 IC (A) 1.6 mle131 (6) (5) (4) (3) (2) (1) 103 RCEsat (Ω) 102 mle132 (7) 1.2 (8) (9) (10) 10 0.8 1 0.4 (2) (1) (3) 0 0 1 2 3 4 VCE (V) 5 10−1 10−1 1 10 102 103 104 IC (mA) TR1 (NPN) Tamb = 25 °C. (1) IB = 60 mA. (2) IB = 54 mA. (3) IB = 48 mA. (4) IB = 42 mA. (5) IB = 36 mA. (6) IB = 30 mA. (7) IB = 24 mA. (8) IB = 18 mA. (9) IB = 12 mA. (10) IB = 6 mA. TR1 (NPN) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 7. Collector current as a function of collector-emitter voltage; typical values. Fig 8. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 7 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 600 mle124 −1.2 VBE (V) mle122 hFE (1) (1) 400 (2) −0.8 (2) (3) 200 (3) −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP) VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP) VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 9. DC current gain as a function of collector current; typical values. −10 VCEsat (V) Fig 10. Base-emitter voltage as a function of collector current; typical values. −1 VCEsat (V) −10−1 mle119 mle126 −1 (2) (1) −10−1 (2) (1) −10−2 (3) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 11. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 12. Collector-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 8 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor −10 VCEsat (V) mle120 −1.2 VBEsat (V) −1 (1) mle123 −1 −0.8 (2) (3) −10−1 −0.6 (1) (2) −0.4 −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP) Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. TR2 (PNP) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 14. Base-emitter saturation voltage as a function of collector current; typical values. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 9 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor −2 IC (A) −1.6 mle125 (6) (5) (4) (3) (2) (1) 103 RCEsat (Ω) 102 mle121 (7) −1.2 (8) (9) 10 −0.8 (10) 1 −0.4 (2) (1) (3) 0 0 −1 −2 −3 −4 −5 VCE (V) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP) Tamb = 25 °C. (1) IB = −40 mA. (2) IB = −36 mA. (3) IB = −32 mA. (4) IB = −28 mA. (5) IB = −24 mA. (6) IB = −20 mA. (7) IB = −16 mA. (8) IB = −12 mA. (9) IB = −8 mA. (10) IB = −4 mA. TR2 (PNP) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 15. Collector current as a function of collector-emitter voltage; typical values. Fig 16. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 10 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 8. Package outline Plastic surface mounted package; 6 leads SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 Fig 17. Package outline. 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 11 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 9. Revision history Table 8: Revision history Release date 20040603 Data sheet status Objective data Change notice Order number 9397 750 12701 Supersedes Document ID PBSS4160DPN_1 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 12 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 10. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 12701 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Objective data sheet Rev. 01 — 3 June 2004 13 of 14 Philips Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 June 2004 Document order number: 9397 750 12701 Published in The Netherlands