PBSS4160DS

PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 02 — 27 June 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s Dual low power switches (e.g. motors, fans) s Automotive applications 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 1 A; IB = 100 mA [2] Conditions open base [1] Min - Typ 200 Max 60 1 2 250 Unit V A A mΩ Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR 1 collector TR2 emitter TR2 base TR2 collector TR1 1 2 sym020 Simplified outline 6 5 4 Symbol 6 5 4 TR2 1 2 3 TR1 3 3. Ordering information Table 3: Ordering information Package Name PBSS4160DS SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking codes Marking code B8 Type number PBSS4160DS 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Per transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter open base open collector [1] [2] [3] Conditions Min [1] [2] [3] Max 80 60 5 870 1 1 2 300 1 290 370 450 Unit V V V mA A A A mA A mW mW W ICM IB IBM Ptot peak collector current base current (DC) peak base current total power dissipation single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C - PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 2 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Per device Ptot total power dissipation Tamb ≤ 25 °C [1] [2] [3] Conditions Min −65 −65 Max 420 560 700 150 +150 +150 Unit mW mW W °C °C °C Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 0.8 Ptot (W) 0.6 (1) 006aaa493 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 3 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Min - Typ - Max 431 338 278 105 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 103 Zth(j-a) (K/W) 102 0.20 0.10 0.05 10 0.02 0.01 δ=1 0.75 0.50 0.33 006aaa494 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 4 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 103 Zth(j-a) (K/W) 102 0.20 0.10 0.05 10 0.02 0.01 δ=1 0.75 0.50 0.33 006aaa495 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 103 Zth(j-a) (K/W) 102 006aaa496 δ=1 0.75 0.50 0.20 0.10 0.05 0.33 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 5 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current DC current gain Conditions VCB = 60 V; IE = 0 A VCB = 60 V; IE = 0 A; Tj = 150 °C VCE = 60 V; VBE = 0 V Min 250 [1] [1] Typ 500 420 180 90 115 200 200 0.95 0.82 11 78 90 340 160 500 220 Max 100 50 100 100 110 140 250 250 1.1 0.9 - Unit nA µA nA nA ICES IEBO hFE emitter-base cut-off current VEB = 5 V; IC = 0 A VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A 200 100 - VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA [1] [1] mV mV mV mΩ V V ns ns ns ns ns ns MHz - RCEsat VBEsat VBEon td tr ton ts tf toff fT collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency IC = 1 A; IB = 100 mA IC = 1 A; IB = 50 mA VCE = 5 V; IC = 1 A IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA [1] [1] VCE = 10 V; IC = 50 mA; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz 150 Cc [1] collector capacitance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. - 5.5 10 pF PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 6 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 800 hFE 600 (2) (1) 006aaa505 1.2 VBE (V) 1.0 006aaa506 0.8 (1) 400 0.6 (3) (2) 200 0.4 (3) 0 10−1 1 10 102 103 104 IC (mA) 0.2 10−1 1 10 102 103 104 IC (mA) VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 5. DC current gain as a function of collector current; typical values 1 006aaa513 Fig 6. Base-emitter voltage as a function of collector current; typical values 1 VCEsat (V) 10−1 (1) (2) 006aaa514 VCEsat (mV) 10−1 (1) (2) (3) 10−2 (3) 10−2 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 7 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 1.2 VBEsat (V) 1.0 006aaa509 103 RCEsat (Ω) 102 006aaa515 0.8 (1) 10 (2) 0.6 (3) (1) (2) (3) 1 0.4 0.2 10−1 1 10 102 103 104 IC (mA) 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. Base-emitter saturation voltage as a function of collector current; typical values 2.0 IC (A) 1.6 006aaa511 Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 103 RCEsat (Ω) 102 006aaa516 IB (mA) = 65.0 58.5 52.0 45.5 39.0 32.5 26.0 19.5 1.2 13.0 6.5 10 (1) 0.8 1 0.4 (2) (3) 0 0 1 2 3 4 VCE (V) 5 10−1 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 8 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 8. Test information IB 90 % input pulse (idealized waveform) IBon (100 %) 10 % IBoff IC 90 % output pulse (idealized waveform) IC (100 %) 10 % t td ton tr ts toff tf 006aaa003 Fig 13. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mlb826 IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 14. Test circuit for switching times PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 9 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 5 4 0.6 0.2 1.1 0.9 3.0 2.5 1.7 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm 2 3 0.40 0.25 0.26 0.10 04-11-08 Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS4160DS Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] For further information and the availability of packing methods, see Section 17. T1: normal taping T2: reverse taping [2] [3] Packing quantity 3000 -115 -125 10000 -135 -165 PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 10 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 16. Reflow soldering footprint 5.30 solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste MSC423 1.40 4.30 Dimensions in mm Fig 17. Wave soldering footprint PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 11 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 12. Revision history Table 9: Revision history Release date 20050627 Data sheet status Product data sheet Change notice Doc. number Supersedes PBSS4160DS_1 Document ID PBSS4160DS_2 Modifications: • • • • • • • Product status changed Table 7 “Characteristics”: Switching times parameters td, tr, ton, ts, tf, and toff added Figure 13 “BISS transistor switching time definition”: added Figure 14 “Test circuit for switching times”: added Section 10 “Packing information”: added Section 11 “Soldering”: added Section 16 “Trademarks”: added Objective data sheet 9397 750 12703 - PBSS4160DS_1 20040426 PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 12 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 13. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PBSS4160DS_2 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 27 June 2005 13 of 14 Philips Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 June 2005 Document number: PBSS4160DS_2 Published in The Netherlands