PBSS4160V

PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, reduces heat generation Reduces printed-circuit board area required Cost effective replacement for medium power transistor BCP55 and BCX55 1.3 Applications s Major application segments: x Automotive x Telecom infrastructure x Industrial s Power management: x DC-to-DC conversion x Supply line switching s Peripheral driver x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance t = 1 ms or limited by Tj(max) IC = 1 A; IB = 100 mA [2] Conditions open base [1] Min - Typ 200 Max Unit 60 1 2 250 V A A mΩ Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1, 2, 5, 6 3 4 Discrete pinning Description collector base emitter 6 5 4 3 4 sym014 Simplified outline Symbol 1, 2, 5, 6 1 2 3 SOT666 3. Ordering information Table 3: Ordering information Package Name PBSS4160V Description plastic surface mounted package; 6 leads Version SOT666 Type number 4. Marking Table 4: Marking codes Marking code 41 Type number PBSS4160V 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 2 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tamb Tstg [1] [2] Parameter collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current Conditions open base open collector [1] [2] Min - Max 80 60 5 0.9 1 2 300 1 300 500 150 +150 +150 Unit V V V A A mA A mW mW °C °C °C collector-base voltage open emitter t = 1 ms or limited by Tj(max) tp ≤ 300 µs; δ ≤ 0.02 [1] [2] −65 −65 total power dissipation Tamb ≤ 25 °C junction temperature ambient temperature storage temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 0.6 Ptot (W) (1) 001aaa714 0.4 (2) 0.2 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB; 1 cm2 collector mounting pad. (2) FR4 PCB; standard footprint. Fig 1. Power derating curves 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 3 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] Min Typ Max Unit 415 K/W 250 K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 001aaa715 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 PCB; standard footprint. (1) δ = 1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ = 0 Fig 2. Transient thermal impedance as a function of pulse time; typical values 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 4 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current collector-emitter cut-off current Conditions VCB = 60 V; IE = 0 A VCB = 60 V; IE = 0 A; Tj = 150 °C VCE = 60 V; VBE = 0 V Min 250 [1] [1] Typ 400 350 150 90 110 200 0.95 200 0.82 11 78 90 340 160 500 220 5.5 Max 100 50 100 100 110 140 250 1.1 250 0.9 10 Unit nA µA nA nA ICES IEBO hFE emitter-base cut-off VEB = 5 V; IC = 0 A current DC current gain VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A 200 100 - VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA [1] mV mV mV V mΩ V ns ns ns ns ns ns MHz pF - VBEsat RCEsat VBEon td tr ton ts tf toff fT Cc [1] base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time IC = 1 A; IB = 50 mA IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA [1] 150 - transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz collector capacitance VCB = 10 V; IE = Ie = 0 A; f = 1 MHz Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 5 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 800 hFE 600 (1) mle130 1.2 VBE (V) (1) mle133 0.8 (2) (2) (3) 400 (3) 0.4 200 0 10−1 1 10 102 103 104 IC (mA) 0 10−1 1 10 102 103 104 IC (mA) VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values mle135 Fig 4. Base-emitter voltage as a function of collector current; typical values mle104 1 VCEsat (V) 10−1 1 VCEsat (V) 10−1 (2) (1) 10−2 (3) (1) (3) (2) 10−3 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 6 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 1 VCEsat (V) mle129 1.2 VBEsat (V) mle134 (1) (2) 0.8 (1) (3) 10−1 (2) 0.4 10−2 10−1 1 10 102 103 104 IC (mA) 0 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 7 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 2 IC (A) 1.6 mle131 (6) (5) (4) (3) (2) (1) 103 RCEsat (Ω) 102 mle132 (7) 1.2 (8) (9) (10) 10 0.8 1 0.4 (2) (1) (3) 0 0 1 2 3 4 VCE (V) 5 10−1 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C (1) IB = 60 mA (2) IB = 54 mA (3) IB = 48 mA (4) IB = 42 mA (5) IB = 36 mA (6) IB = 30 mA (7) IB = 24 mA (8) IB = 18 mA (9) IB = 12 mA (10) IB = 6 mA IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Equivalent on-resistance as a function of collector current; typical values 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 8 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor IB 90 % input pulse (idealized waveform) IBon (100%) 10 % IBoff IC 90 % output pulse (idealized waveform) IC (100%) 10 % t td ton tr ts toff tf 006aaa003 Fig 11. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mlb826 VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA Fig 12. Test circuit for switching times 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 9 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 Fig 13. Package outline SOT666 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 10 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 9. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS4160V [1] Package SOT666 Description 4 mm pitch, 8 mm tape and reel Packing quantity 4000 -115 For further information and the availability of packing methods, see Section 14. 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 11 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 10. Revision history Table 9: Revision history Release date 20050131 Data sheet status Product data sheet Change notice Doc. number 9397 750 14359 Supersedes PBSS4160V_1 Document ID PBSS4160V_2 Modifications: • • • • Table 7 Switching time parameters td, tr, ton, ts, tf and toff added Figure 11 BISS transistor switching time definition added Figure 12 Test circuit for switching times added Section 9 Packing information added Objective data sheet 9397 750 12884 - PBSS4160V_1 20040423 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 12 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14359 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 31 January 2005 13 of 14 Philips Semiconductors PBSS4160V 60 V, 1 A NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 31 January 2005 Document number: 9397 750 14359 Published in The Netherlands