PBSS4220V

PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: VCEO IC ICM RCEsat [1] Quick reference data Conditions open base tp ≤ 300 µs IC = 1 A; IB = 100 mA [1] Symbol Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 140 Max 20 2 4 175 Unit V A A mΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter 4 6 5 4 3 1, 2, 5, 6 Simplified outline Symbol collector collector 1 2 3 sym014 3. Ordering information Table 3: Ordering information Package Name PBSS4220V Description plastic surface mounted package; 6 leads Version SOT666 Type number 4. Marking Table 4: Marking codes Marking code N6 Type number PBSS4220V 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation tp ≤ 300 µs Tamb ≤ 25 °C [1] [4] [2] [4] [3] [4] Conditions open emitter open base open collector tp ≤ 300 µs Min - Max 20 20 5 2 4 0.3 0.6 0.3 0.5 0.9 150 Unit V V V A A A A W W W °C Tj junction temperature PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 2 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tamb Tstg [1] [2] [3] [4] Parameter ambient temperature storage temperature Conditions Min −65 −65 Max +150 +150 Unit °C °C Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Reflow soldering is the only recommended soldering method. 1.2 Ptot (W) 0.8 006aaa424 (1) (2) 0.4 (3) 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 3 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [4] [2] [4] [3] [4] Min - Typ - Max 410 250 140 80 Unit K/W K/W K/W K/W Rth(j-sp) [1] [2] [3] [4] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Reflow soldering is the only recommended soldering method. 103 Zth(j-a) (K/W) 102 006aaa425 duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.75 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 4 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = 20 V; IE = 0 A VCB = 20 V; IE = 0 A; Tj = 150 °C VCE = 20 V; VBE = 0 V VEB = 5 V; IC = 0 A VCE = 2 V; IC = 1 mA VCE = 2 V; IC = 100 mA VCE = 2 V; IC = 500 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 2 A VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 1 A; IB = 100 mA IC = 2 A; IB = 100 mA IC = 2 A; IB = 200 mA RCEsat VBEsat VBEon td tr ton ts tf toff fT Cc [1] [1] [1] [1] [1] [1] [1] [1] [1] [1] Min 220 220 220 200 120 - Typ 480 440 410 360 220 35 70 145 140 275 270 140 0.95 1 0.8 9 29 38 200 40 240 210 11 Max 0.1 50 0.1 0.1 55 95 180 175 355 350 175 1.1 1.2 1.1 - Unit µA µA µA µA ICES IEBO hFE mV mV mV mV mV mV mΩ V V V ns ns ns ns ns ns MHz pF collector-emitter saturation resistance IC = 1 A; IB = 100 mA base-emitter saturation IC = 1 A; IB = 50 mA voltage IC = 1 A; IB = 100 mA base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance VCE = 10 V; IC = 50 mA; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz VCE = 5 V; IC = 1 A IC = 1 A; IBon = 50 mA; IBoff = −50 mA [1] [1] - Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 5 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 1000 hFE 800 006aaa662 1.0 VBE (V) 0.8 (1) 006aaa663 (1) 600 (2) 0.6 (2) 400 (3) (3) 0.4 200 0 10−1 1 10 102 103 104 IC (mA) 0.2 10−1 1 10 102 103 104 IC (mA) VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values 1 VCEsat (V) 10−1 (1) (2) (3) Fig 4. Base-emitter voltage as a function of collector current; typical values 1 VCEsat (V) 10−1 006aaa665 006aaa664 (1) (2) 10−2 10−2 (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 6 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 1.2 VBEsat (V) 1.0 (1) 006aaa666 102 RCEsat (Ω) 10 006aaa667 0.8 (2) 0.6 (3) 1 0.4 (1) (2) (3) 0.2 10−1 1 10 102 103 104 IC (mA) 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 2.0 IC (A) 1.6 006aaa668 Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values 103 RCEsat (Ω) 102 (1) 006aaa669 IB (mA) = 8.0 7.2 6.4 5.6 4.8 4.0 1.2 3.2 2.4 10 (2) 0.8 1.6 1 0.4 0.8 (3) 0 0 1 2 3 4 VCE (V) 5 10−1 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 7 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 8. Test information IB 90 % input pulse (idealized waveform) IBon (100 %) 10 % IBoff IC 90 % output pulse (idealized waveform) IC (100 %) 10 % t td ton tr ts toff tf 006aaa003 Fig 11. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mlb826 IC = 1 A; IBon = 50 mA; IBoff = −50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω Fig 12. Test circuit for switching times PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 8 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 9. Package outline 1.7 1.5 6 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 0.6 0.5 1 0.5 1 Dimensions in mm 2 3 0.27 0.17 0.18 0.08 04-11-08 Fig 13. Package outline SOT666 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS4220V Package SOT666 Description 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel [1] For further information and the availability of packing methods, see Section 17. Packing quantity 4000 -115 8000 -315 - PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 9 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 11. Soldering 2.75 2.45 2.10 1.60 0.15 (4×) 0.40 (6×) 2.00 1.70 1.00 0.55 (2×) 0.30 (2×) 0.375 (4×) 1.20 2.20 2.50 solder lands placement area occupied area 0.075 solder resist Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 10 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9: Revision history Release date 20060206 Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID PBSS4220V_1 PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 11 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 13. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 12 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 February 2006 Document number: PBSS4220V_1 Published in The Netherlands