PBSS4240Y

DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. PNP complement: PBSS5240Y. MARKING TYPE NUMBER PBSS4240Y Note 1. * = p: made in Hongkong. * = t: made in Malaysia. 42* Fig.1 MARKING CODE(1) 1 2 Top view 3 handbook, halfpage PBSS4240Y QUICK REFERENCE DATA SYMBOL VCEO ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. 40 3