PBSS4320T

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. MARKING TYPE NUMBER PBSS4320T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS4320T PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZG* Top view handbook, halfpage PBSS4320T QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. 20 2 3 105 UNIT V A A mΩ 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 2004 Mar 18 2 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRP ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Tamb ≤ 25 °C; note 4 Tamb ≤ 25 °C; notes 1 and 2 Tstg Tj Tamb Notes 1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. storage temperature junction temperature operating ambient temperature note 1 single peak CONDITIONS open emitter open base open collector − − − − − − − − − − − −65 − −65 MIN. PBSS4320T MAX. 20 20 5 2 3 5 0.5 300 480 540 1.2 +150 150 +150 V V V A A A A UNIT mW mW mW W °C °C °C 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 in free air; note 3 in free air; notes 1 and 4 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25. VALUE 417 260 230 104 UNIT K/W K/W K/W K/W 2004 Mar 18 3 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS − − − 220 220 220 200 150 − − − − − − − − 1.2 100 − IE = 0 A; VCB = 20 V; Tj = 150 °C emitter-base cut-off current DC current gain IC = 0 A; VEB = 5 V IC = 100 mA; VCE = 2 V IC = 500 mA; VCE = 2 V IC = 1 A; VCE = 2 V; note 1 IC = 2 A; VCE = 2 V; note 1 IC = 3 A; VCE = 2 V; note 1 VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 40 mA; note 1 IC = 2 A; IB = 200 mA; note 1 IC = 3 A; IB = 300 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 2 A; IB = 200 mA; note 1 IC = 2 A; IB = 40 mA; note 1 IC = 3 A; IB = 300 mA; note 1 IC = 1 A; VCE = 2 V; note 1 IC = 100 mA; VCE = 5 V; f = 100 MHz IE = Ie = 0 A; VCB = 10 V; f = 1 MHz MIN. − − − − − − − − − − − − − 80 − − − − − TYP. PBSS4320T MAX. 100 50 100 − − − − − 70 120 230 210 310 105 1.1 1.2 − − 35 UNIT nA µA nA collector-base cut-off current IE = 0 A; VCB = 20 V mV mV mV mV mV mΩ V V V MHz pF 2004 Mar 18 4 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T handbook, halfpage 800 MLD849 handbook, halfpage 1200 MLD850 hFE 600 (1) VBE (mV) (1) 800 (2) 400 (2) (3) 400 200 (3) 0 10−1 1 10 102 103 104 IC (mA) 0 10−1 1 10 102 103 104 IC (mA) VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. handbook, halfpage 1400 MLD851 handbook, halfpage 1400 MLD852 VBEsat (mV) 1000 (1) (2) VBEsat (mV) 1000 (1) (2) 600 (3) 600 (3) 200 10−1 1 10 102 103 104 IC (mA) 200 10−1 1 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Base-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 18 5 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T 103 handbook, halfpage VCEsat (mV) 102 MLD853 103 handbook, halfpage VCEsat (mV) 102 (3) (1) MLD854 (2) (1) (2) 10 (3) 10 1 10−1 1 10 102 103 104 IC (mA) 1 10−1 1 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. 103 handbook, halfpage VCEsat (mV) 102 MLD855 103 handbook, halfpage VCEsat (mV) 102 (1) (3) (2) MLD856 (1) 10 (2) (3) 10 1 10−1 1 10 102 103 104 IC (mA) 1 10−1 1 10 102 103 104 IC (mA) IC/IB = 50. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 100. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 18 6 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T 102 handbook, halfpage RCEsat (Ω) 10 MLD857 1 (1) 10−1 (2) (3) 10−2 10−1 1 10 102 103 104 IC (mΑ) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Equivalent on-resistance as a function of collector current; typical values. 2004 Mar 18 7 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PBSS4320T SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 Mar 18 8 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS4320T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Mar 18 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 18 Document order number: 9397 750 12436