PBSS4350

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PBSS4350S 50 V low VCEsat NPN transistor Product specification 2001 Nov 19 Philips Semiconductors Product specification 50 V low VCEsat NPN transistor FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generation APPLICATIONS • Medium power switching and muting • Linear regulators • DC/DC convertor • Supply line switching circuits • Battery management applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION NPN low VCEsat transistor in a SOT54 plastic package. PNP complement: PBSS5350S. MARKING TYPE NUMBER PBSS4350S MARKING CODE S4350S Fig.1 1 handbook, halfpage PBSS4350S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 50 3 5