PBSS4480X

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Aug 5 2004 Oct 25 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers; e.g. fan, motor • Strobe flash units for DSC and mobile phones • Inverter applications; e.g. TFT displays • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION NPN low VCEsat transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5480X. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER collector current (DC) peak collector current equivalent on-resistance PBSS4480X MAX. 4 10 54 UNIT V A A mΩ collector-emitter voltage 80 DESCRIPTION 2 MARKING 3 TYPE NUMBER PBSS4480X Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. MARKING CODE(1) *1Y 3 2 1 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4480X − DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Oct 25 2 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRM ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation t ≤ 300 µs Tamb ≤ 25 °C notes 1 and 2 note 2 note 3 note 4 note 5 Tj Tamb Tstg Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. junction temperature ambient temperature storage temperature − − − − − − −65 −65 CONDITIONS open emitter open base open collector note 4 tp ≤ 10 ms; δ ≤ 0.1 − − − − − − − MIN. PBSS4480X MAX. 80 80 5 4 6 10 1 2 2.5 550 1 1.4 1.6 150 +150 +150 UNIT V V V A A A A A W mW W W W °C °C °C t = 1 ms or limited by Tj(max) − 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Oct 25 3 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 1600 Ptot (mW) 1200 (2) (1) 001aaa229 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4; standard footprint. Fig.2 Power derating curves. 2004 Oct 25 4 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS PBSS4480X VALUE 50 225 125 90 80 16 UNIT K/W K/W K/W K/W K/W K/W thermal resistance from junction in free air to ambient notes 1 and 2 note 2 note 3 note 4 note 5 Rth(j-s) Notes thermal resistance from junction to soldering point 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 006aaa232 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 5 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 103 Zth (K/W) (1) 006aaa233 102 (3) (5) (6) (2) (4) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) (8) (9) 006aaa234 10 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Oct 25 6 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 80 V; IE = 0 A VCB = 80 V; IE = 0 A; Tj = 150 °C ICES IEBO hFE collector-emitter cut-off current emitter-base cut-off current DC current gain VCE = 80 V; VBE = 0 V VEB = 5 V; IC = 0 A VCE = 2 V; IC = 0.5 A − − − − 250 MIN. − − − − 400 400 270 140 25 55 110 170 200 40 0.78 0.79 0.82 0.95 0.78 150 35 TYP. PBSS4480X MAX. 100 50 100 100 − − − − 40 80 160 230 270 54 0.85 0.9 0.95 1.05 0.85 − 50 UNIT nA µA nA nA − − − − mV mV mV mV mV mΩ V V V V V MHz pF VCE = 2 V; IC = 1 A; note 1 250 VCE = 2 V; IC = 2 A; note 1 175 VCE = 2 V; IC = 4 A; note 1 80 VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 40 mA IC = 4 A; IB = 200 mA; note 1 IC = 5 A; IB = 500 mA; note 1 RCEsat VBEsat equivalent on-resistance base-emitter saturation voltage IC = 5 A; IB = 500 mA; note 1 IC = 0.5 A; IB = 50 mA IC = 1 A; IB = 50 mA IC = 1 A; IB = 100 mA; note 1 IC = 4 A; IB = 400 mA; note 1 VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. base-emitter turn-on voltage transition frequency collector capacitance IC = 2 A; VCE = 2 V IC = 100 mA; VCE = 10 V; f = 100 MHz IE = ie = 0 A; VCB = 10 V; f = 1 MHz − − − − − − − − − − − 120 − 2004 Oct 25 7 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 1000 hFE 800 (2) (1) 001aaa734 1.2 VBE (V) 0.8 001aab057 (1) 600 (2) 400 (3) 0.4 200 (3) 0 10−1 1 10 102 103 104 IC (mA) 0 10-1 1 10 102 103 104 IC (mA) VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. 103 VCEsat (mV) 102 (1) (2) 001aaa737 1 VCEsat (V) 10-1 (1) (2) (3) 001aaab059 10 (3) 10-2 1 10−1 1 10 102 103 104 IC (mA) 10-3 10-1 1 10 102 103 104 IC (mA) (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Oct 25 8 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PBSS4480X 1.2 VBEsat (V) 0.8 (1) 001aaa736 103 RCEsat (Ω) 102 001aaa738 10 (2) (3) 1 0.4 10−1 (2) (3) (1) 0 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. 10 IC (A) 8 001aaa733 (4) (3) (2) (1) 1.2 VBEon (V) 0.8 001aab321 (5) (6) (7) 6 (8) (9) 4 (10) 0.4 2 0 0 0.4 0.8 1.2 1.6 VCE (V) 2 0 10−1 1 10 102 103 104 IC (mA) (1) IB = 190 mA. (2) IB = 171 mA. (3) IB = 152 mA. (4) IB = 133 mA. (5) IB = 114 mA. (6) IB = 95 mA. (7) IB = 76 mA. (8) IB = 57 mA. (9) IB = 38 mA. (10) IB = 19 mA. Tamb = 25 °C. Fig.12 Collector current as a function of collector-emitter voltage; typical values. Fig.13 Base-emitter turn-on voltage as a function of collector current; typical values. 2004 Oct 25 9 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor Reference mounting conditions PBSS4480X 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 1 mm 3 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa234 40 mm 10 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm MLE322 Fig.14 FR4, standard footprint. Fig.15 FR4, mounting pad for collector 1 cm2. 32 mm 30 mm 40 mm 2.5 mm 1 mm 0.5 mm 20 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Oct 25 10 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads PBSS4480X SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 2004 Oct 25 11 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS4480X This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Oct 25 12 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp13 Date of release: 2004 Oct 25 Document order number: 9397 750 13924