PBSS8110T

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor FEATURES • SOT23 package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Major application segments – Automotive 42 V power – Telecom infrastructure – Industrial • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS9110T. MARKING TYPE NUMBER PBSS8110T Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *U8 Top view handbook, halfpage PBSS8110T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. 100 1 3 200 UNIT V A A mΩ 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 2003 Dec 22 2 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tamb Tstg Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation junction temperature operating ambient temperature storage temperature Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 limited by Tj max CONDITIONS open emitter open base open collector − − − − − − − − − −65 −65 MIN. PBSS8110T MAX. 120 100 5 1 3 300 300 480 150 +150 +150 V V V A A UNIT mA mW mW °C °C °C 2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. handbook, halfpage 500 Ptot MLE354 (mW) 400 (1) 300 200 (2) 100 0 0 40 80 160 120 Tamb (°C) (1) FR4 PCB; 1 cm2 copper mounting pad for collector. (2) Standard footprint. Fig.2 Power derating curves. 2003 Dec 22 3 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth( j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 VALUE 417 260 PBSS8110T UNIT K/W K/W Notes 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) mle356 P 10 (8) (9) δ= tp T tp (10) t T 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 (1) δ = 1.0. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.03. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.0. Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint. 2003 Dec 22 4 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) mle355 P 10 (7) (8) (9) (10) δ= tp T tp T t 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 (1) δ = 1.0. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.03. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.0. Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad. 2003 Dec 22 5 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 80 V; IE = 0 VCB = 80 V; IE = 0; Tj = 150 °C VCE = 80 V; VBE = 0 VEB = 4 V; IC = 0 VCE = 10 V; IC = 1 mA VCE = 10 V; IC = 250 mA VCE = 10 V; IC = 500 mA; note 1 VCE = 10 V; IC = 1 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 100 mA; note 1 IC = 1 A; IB = 100 mA VCE = 10 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. − − − − 150 150 100 80 − − − − − − 100 − PBSS8110T TYP. − − − − − − − − − − − 165 − − − − MAX. 100 50 100 100 − 500 − − 40 120 200 200 1.05 0.9 − 7.5 UNIT nA µA nA nA mV mV mV mΩ V V MHz pF 2003 Dec 22 6 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T 600 mle352 handbook, halfpage 1.2 MLE362 hFE VBE (V) (1) 400 (1) 0.8 (2) (2) (3) 200 (3) 0.4 0 10−1 1 10 102 103 104 IC (mA) 0 10−1 1 10 102 103 104 IC (mA) VCE = 10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 DC current gain as a function of collector current; typical values. Fig.6 Base-emitter voltage as a function of collector current; typical values. handbook, halfpage 1 MLE366 handbook, halfpage 1 MLE353 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (2) (3) 10−2 10−1 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20. Tamb = 25 °C. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Dec 22 7 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T 10 VCEsat (V) 1 mle357 handbook, halfpage 10 MLE363 VBEsat (V) 1 10−1 (1) (2) (3) 10−2 10−1 1 10 10−2 10−3 10−4 IC (mA) 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 50. Tamb = 25 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage 10 MLE364 1 handbook, halfpage VBEsat (V) MLE365 VBEsat (V) 1 10−1 10−1 1 10 102 103 104 IC (mA) 10−1 10−1 10 10 102 103 104 IC (mA) IC/IB = 20. Tamb = 25 °C. IC/IB = 50. Tamb = 25 °C. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. Fig.12 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Dec 22 8 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor PBSS8110T 2 IC (A) 1.6 mle358 (2) (1) (3) (4) (5) (6) (7) 103 handbook, halfpage RCEsat (Ω) 102 MLE359 1.2 (8) (9) 10 0.8 (10) 1 0.4 (1) (2) 0 0 1 2 3 4 VCE (V) 5 10−1 (3) 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C. (1) (2) (3) (4) IB = 3500 µA. IB = 3150 µA. IB = 2800 µA. IB = 2450 µA. (5) (6) (7) (8) IB = 2100 µA. IB = 1750 µA. IB = 1400 µA. IB = 1050 µA. (9) IB = 700 µA. (10) IB = 350 µA. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.13 Collector current as a function of collector-emitter voltage; typical values. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 103 handbook, halfpage RCEsat (Ω) 102 MLE360 103 handbook, halfpage RCEsat (Ω) 102 MLE361 10 10 1 1 10−1 10−1 1 10 102 103 104 IC (mA) 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20. Tamb = 25 °C. IC/IB = 50. Tamb = 25 °C. Fig.15 Collector-emitter equivalent on-resistance as a function of collector current; typical values. Fig.16 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Dec 22 9 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PBSS8110T SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Dec 22 10 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS8110T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Dec 22 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp12 Date of release: 2003 Dec 22 Document order number: 9397 750 12008