PBSS8110Y

PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 2 June 2004 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features s s s s SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation. 1.3 Applications s Major application segments: x Automotive 42 V power x Telecom infrastructure x Industrial. s Peripheral driver: x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors). s DC-to-DC converter. 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance Conditions Min Typ Max 100 1 3 200 Unit V A A mΩ Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1, 2, 5, 6 3 4 Discrete pinning Description collector base emitter 6 5 4 3 4 1 2 3 SOT363 sym014 Simplified outline Symbol 1, 2, 5, 6 3. Ordering information Table 3: Ordering information Package Name PBSS8110Y Description plastic surface mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4: Marking Marking code [1] 81* Type number PPBSS8110Y [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO ICM IC IB Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage peak collector current continuous collector current continuous base current total power dissipation Tamb ≤ 25 °C [1] [2] [3] Conditions open emitter open base open collector Tj(max) Min - Max 120 100 5 3 1 0.3 290 480 625 Unit V V V A A A mW mW mW 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 2 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Tj Tamb Tstg [1] [2] [3] Parameter junction temperature operating ambient temperature storage temperature Conditions Min −65 −65 Max 150 +150 +150 Unit °C °C °C Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad. 600 Ptot (mW) (1) 001aaa796 400 (2) 200 0 0 40 80 120 160 Tamb (°C) (1) 1 cm2 collector mounting pad. (2) Standard footprint. Fig 1. Power derating curves. 6. Thermal characteristics Table 6: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Typ 431 260 200 85 Unit K/W K/W K/W K/W Rth(j-s) [1] [2] [3] 9397 750 12567 thermal resistance from junction to soldering point in free air [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad. Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm2 collector mounting pad. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 3 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 001aaa798 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 PCB; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig 2. Transient thermal impedance as a function of pulse time; typical values. 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 4 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 001aaa797 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 PCB; mounting pad for collector = 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig 3. Transient thermal impedance as a function of pulse time; typical values. 7. Characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = 80 V; IE = 0 A VCB = 80 V; IE = 0 A; Tj = 150 °C VCE = 80 V; VBE = 0 V VEB = 4 V; IC = 0 A VCE = 10 V; IC = 1 mA VCE = 10 V; IC = 250 mA VCE = 10 V; IC = 0.5 A VCE = 10 V; IC = 1 A [1] [1] Min 150 150 100 80 Typ - Max 100 50 100 100 500 - Unit nA µA nA nA ICES IEBO hFE 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 5 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Table 7: Characteristics …continued Tj = 25 °C unless otherwise specified. Symbol VCEsat Parameter collector-emitter saturation voltage Conditions IC = 100 mA; IB = 10 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA RCEsat VBEsat VBEon fT Cc equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Min [1] Typ 160 - Max 40 120 200 200 1.05 0.9 7.5 Unit mV mV mV mΩ V V MHz pF IC = 1 A; IB = 100 mA IC = 1 A; IB = 100 mA VCE = 10 V; IC = 1 A VCE = 10 V; IC = 50 mA; f = 100 MHz VCB = 10 V; IE = Ie = 0 A; f = 1 MHz 100 - [1] 600 hFE 001aaa497 1000 VBE (mV) (1) 001aaa495 800 400 (1) (2) (2) 600 (3) 200 (3) 400 0 10−1 1 10 102 103 104 IC (mA) 200 10−1 1 10 102 103 104 IC (mA) VCE = 10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 4. DC current gain as a function of collector current; typical values. Fig 5. Base-emitter voltage as a function of collector current; typical values. 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 6 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 103 001aaa504 103 001aaa505 VCEsat (mV) VCEsat (mV) 102 102 (1) (2) (3) 10 10−1 1 10 102 103 104 IC (mA) 10 10−1 1 10 102 103 104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 20; Tamb = 25 °C. Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values. 104 VCEsat (mV) 103 001aaa506 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values. 1200 VBEsat (mV) 1000 (1) 001aaa498 800 (2) (3) 600 102 400 10 10−1 1 10 102 103 104 IC (mA) 200 10−1 1 10 102 103 104 IC (mA) IC/IB = 50; Tamb = 25 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values. Fig 9. Base-emitter saturation voltage as a function of collector current; typical values. 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 7 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 1200 VBEsat (mV) 1000 001aaa499 1000 VBEsat (mV) 001aaa500 800 800 600 600 400 10−1 1 10 102 103 104 IC (mA) 400 10−1 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C. IC/IB = 50; Tamb = 25 °C. Fig 10. Base-emitter saturation voltage as a function of collector current; typical values. 2 IC (A) 1.6 (1) (2) (3) (4) (5) (6) (7) (8) Fig 11. Base-emitter saturation voltage as a function of collector current; typical values. 103 RCEsat (Ω) 102 001aaa501 001aaa496 1.2 10 0.8 (9) (10) 1 (1) (2) (3) 0.4 0 0 1 2 3 4 VCE (V) 5 10−1 10−1 1 10 102 103 104 IC (mA) Tamb = 25 °C. (1) IB = 35 mA. (2) IB = 31.5 mA. (3) IB = 28 mA. (4) IB = 24.5 mA. (5) IB = 21 mA. (6) IB = 17.5 mA. (7) IB = 14 mA. (8) IB = 10.5 mA. (9) IB = 7 mA. (10) IB = 3.5 mA. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig 12. Collector current as a function of collector-emitter voltage; typical values. Fig 13. Equivalent on-resistance as a function of collector current; typical values. 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 8 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 103 RCEsat (Ω) 102 001aaa502 103 RCEsat (Ω) 102 001aaa503 10 10 1 1 10−1 10−1 1 10 102 103 104 IC (mA) 10−1 10−1 1 10 102 103 104 IC (mA) IC/IB = 20; Tamb = 25 °C. IC/IB = 50; Tamb = 25 °C. Fig 14. Equivalent on-resistance as a function of collector current; typical values. Fig 15. Equivalent on-resistance as a function of collector current; typical values. 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 9 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface mounted package; 6 leads SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 16. Package outline. 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 10 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Revision history Table 8: Revision history Release date 20040602 Data sheet status Product data Change notice Order number 9397 750 12567 Supersedes Document ID PBSS8110Y_1 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 11 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 10. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 12567 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 2 June 2004 12 of 13 Philips Semiconductors PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 June 2004 Document order number: 9397 750 12567 Published in The Netherlands