PBSS9110T

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 May 06 2004 May 13 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor FEATURES • SOT23 package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation APPLICATIONS • Major application segments – Automotive 42 V power – Telecom infrastructure – Industrial • DC-to-DC conversion • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS8110T. MARKING TYPE NUMBER PBSS9110T Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS9110T PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *U7 Top view handbook, halfpage PBSS9110T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −100 −1 −3 320 UNIT V A A mΩ 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 2004 May 13 2 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tj Tamb Tstg Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation junction temperature operating ambient temperature storage temperature Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 limited by Tj(max) CONDITIONS open emitter open base open collector − − − − − − − − − −65 −65 MIN. PBSS9110T MAX. −120 −100 −5 −1 −3 −300 300 480 150 +150 +150 V V V A A UNIT mA mW mW °C °C °C 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 600 Ptot (mW) (1) 001aaa811 400 (2) 200 0 0 40 80 120 160 Tamb (°C) (1) 1 cm2 collector mounting pad. (2) Standard footprint. Fig.2 Power derating curves. 2004 May 13 3 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 VALUE 417 260 PBSS9110T UNIT K/W K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 001aaa814 10 (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on printed-circuit board; 1 cm2 collector mounting pad. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 4 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) (7) 001aaa813 10 (8) (9) (10) 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 2004 May 13 5 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = −80 V; IE = 0 A VCB = −80 V; IE = 0 A; Tj = 150 °C VCE = −80 V; VBE = 0 A VEB = −4 V; IC = 0 A VCE = −5 V; IC = −1 mA VCE = −5 V; IC = −250 mA VCE = −5 V; IC = −500 mA; note 1 VCE = −5 V; IC = −1 A; note 1 VCEsat collector-emitter saturation voltage IC = −250 mA; IB = −25 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −100 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = −1 A; IB = −100 mA; note 1 IC = −1 A; IB = −100 mA VCE = −5 V; IC = −1 A VCE = −10 V; IC = −50 mA; f = 100 MHz VCB = −10 V; IE = Ie = 0 A; f = 1 MHz MIN. − − − − 150 150 150 125 − − − − − − 100 − PBSS9110T TYP. − − − − − − − − − − − 170 − − − − MAX. −100 −50 −100 −100 − − 450 − −120 −180 −320 320 −1.1 −1 − 17 UNIT nA µA nA nA mV mV mV mΩ V V MHz pF 2004 May 13 6 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 600 hFE (1) 001aaa376 −1.2 VBE (V) −0.8 (1) 001aaa377 400 (2) (2) (3) 200 (3) −0.4 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 DC current gain as a function of collector current; typical values. Fig.6 Base-emitter voltage as a function of collector current; typical values. −1 001aaa378 −1 001aaa380 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 50. (2) IC/IB = 20. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 May 13 7 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T −10 001aaa381 −10 001aaa379 VBEsat (V) VBEsat (V) −1 (1) (2) (3) −1 −10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. IC/IB = 20. Tamb = 25 °C. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. 103 RCEsat (Ω) 102 001aaa382 103 RCEsat (Ω) 102 001aaa383 10 (1) (2) 10 (1) 1 (3) 1 (2) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Tamb = 25 °C. (1) IC/IB = 50. (2) IC/IB = 20. Fig.11 Equivalent on-resistance as a function of collector current; typical values. Fig.12 Equivalent on-resistance as a function of collector current; typical values. 2004 May 13 8 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T −2 IC (A) −1.6 001aaa384 (1) (2) (3) (4) (5) (6) (7) (8) −1.2 (9) (10) −0.8 −0.4 0 0 −1 −2 −3 −4 VCE (V) −5 Tamb = 25 °C. (1) (2) (3) (4) IB = 45 mA. IB = 40.5 mA. IB = 36 mA. IB = 31.5 mA. (5) (6) (7) (8) IB = 27 mA. IB = 22.5 mA. IB = 18 mA. IB = 13.5 mA. (9) IB = 9 mA. (10) IB = 4.5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 May 13 9 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PBSS9110T SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 May 13 10 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS9110T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 May 13 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 May 13 Document order number: 9397 750 13273