PBYR30100PT

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. PBYR30100PT series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER PBYR30Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) MAX. 60PT 60 0.7 30 MAX. 80PT 80 0.7 30 MAX. 100PT 100 0.7 30 UNIT V V A PINNING - SOT93 PIN 1 2 3 tab DESCRIPTION Anode 1 (a) Cathode (k) Anode 2 (a) Cathode (k) PIN CONFIGURATION tab SYMBOL a1 a2 k 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -60 60 60 60 MAX. -80 80 80 80 30 43 30 180 200 -100 100 100 100 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 139 ˚C Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode. square wave; δ = 0.5; Tmb ≤ 124 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Tmb ≤ 124 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode. Non-repetitive peak reverse tp = 100 µs current per diode. Storage temperature Operating junction temperature -65 - 162 1 1 175 150 A2s A A ˚C ˚C 1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base. October 1994 1 Rev 1.100 Philips Semiconductors Product Specification Rectifier Diode Schottky Barrier THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air. PBYR30100PT series MIN. - TYP. 45 MAX. 1.4 1.0 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage (per diode) Reverse current (per diode) Junction capacitance (per diode) CONDITIONS IF = 15 A; Tj = 125˚C IF = 30 A; Tj = 125˚C IF = 15 A; Tj = 25˚C VR = VRWM; Tj = 25 ˚C VR = VRWM; Tj = 125 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C MIN. TYP. 0.61 0.74 0.77 5.0 5.0 600 MAX. 0.70 0.85 0.85 150 15 UNIT V V V µA mA pF October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier PBYR30100PT series 20 PF / W Vo = 0.550 V Rs = 0.010 Ohms PBYR30100PT Tmb(max) / C D = 1.0 122 100 IR/ mA PBYR30100PT Tj/ C = 150 15 0.5 10 0.2 0.1 I tp D= tp T t 129 10 125 136 1 100 75 5 T 143 0.1 50 0 0 10 IF(AV) / A 20 150 26 0.01 10 20 30 40 50 60 VR/ V 70 80 90 100 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. PBYR30100 Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 15 PF / W Vo = 0.550 V Rs = 0.010 Ohms Tmb(max) / C Cd/ pF PBYR30100PT 129 10000 a = 1.57 1.9 10 4 2.2 2.8 136 1000 5 143 100 0 0 5 IF(AV) / A 10 150 15 10 1 10 VR/ V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. IF / A 100 Tj = 25 C 80 Tj = 125 C Typ 60 PBYR30100PT Zth j-mb (K/W) 10 Max 1 40 0.1 20 P D tp t 0 0 0.5 1 VF / V 1.5 2 0.01 10us 1ms tp / s 0.1s 10s Fig.3. Typical and maximum forward characteristic per diode; IF = f(VF); parameter Tj Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). October 1994 3 Rev 1.100 Philips Semiconductors Product Specification Rectifier Diode Schottky Barrier MECHANICAL DATA Dimensions in mm Net Mass: 5 g PBYR30100PT series 15.2 max 14 13.6 2 max 4.25 4.15 4.6 max 2 4.4 21 max 12.7 max 2.2 max dimensions within this zone are uncontrolled 1 5.5 11 Fig.7. SOT93; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". 0.5 min 13.6 min 2 3 1.15 0.95 0.5 M 1.6 0.4 October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR30100PT series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 5 Rev 1.100