PBYR6040WT

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR6045WT series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IF(AV) = 60 A VF ≤ 0.58 V SOT429 (TO247) DESCRIPTION a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR6045WT series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab anode 1 (a) cathode (k) anode 2 (a) cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward currentper diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR60 Tmb ≤ 109 ˚C square wave; δ = 0.5; Tmb ≤ 105 ˚C square wave; δ = 0.5; Tmb ≤ 105 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40WT 40 40 40 60 60 400 435 2 150 150 45WT 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. MAX. UNIT 45 1 0.75 K/W K/W K/W December 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF Forward voltage per diode CONDITIONS IF = 30 A; Tj = 125˚C IF = 60 A; Tj = 125˚C IF = 30 A IF = 60 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C PBYR6045WT series MIN. - TYP. MAX. UNIT 0.51 0.7 0.54 0.69 0.3 30 1000 0.58 0.75 0.61 0.76 5 90 V V V V mA mA pF IR Cd Reverse current per diode Junction capacitance December 1998 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR6045WT series Forward dissipation, PF (W) 30 PBYR6045WT 25 20 0.1 15 10 5 0.2 0.5 Tmb(max) (C) 120 D = 1.0 125 130 10 135 tp D = tp/T 1000 100 Reverse Current, IR (mA) PBYR6045WT Tj =125C Tj =100C Tj =75C Tj =50C 0.1 Tj =25C 0.01 0 10 20 30 Reverse Voltage, VR (V) 40 50 140 145 1 T 0 0 10 20 30 40 Average forward current, IF(AV) (A) 150 50 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Forward dissipation, PF (W) 25 PBYR6045WT 20 4 15 10 5 0 0 5 2.8 2.2 Tmb(max) (C) 125 1.9 a = 1.57 130 135 1000 140 145 150 10000 Cd / pF PBYR6045WT 10 15 20 25 Average forward current, IF(AV) (A) 30 100 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Forward Current, IF (A) 60 55 50 45 40 35 30 25 20 15 10 5 0 0 0.1 Tj =125 C Tj = 25 C typ max PBYR6045WT Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 10 Transient Thermal Impedance, Zth j-mb (K/W) PBYR6045WT 1 Single pulse 0.1 P D tp 0.01 t 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Forward Voltage, VF (V) Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). December 1998 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 PBYR6045WT series o 3.5 max 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.7. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". December 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR6045WT series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 5 Rev 1.000