PBYR640CTD

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR645CTD series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 6 A VF ≤ 0.6 V SOT428 DESCRIPTION tab a1 1 k2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CTD series is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab anode 1 cathode1 anode 2 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR6 Tmb ≤ 113 ˚C square wave; δ = 0.5; Tmb ≤ 134 ˚C square wave; δ = 0.5; Tmb ≤ 134 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTD 40 40 40 6 6 65 70 1 150 175 45CTD 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1 it is not possible to make connection to pin 2 of the SOT428 package September 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes pcb mounted, minimum footprint, FR4 board PBYR645CTD series MIN. - TYP. MAX. UNIT 50 4 3.5 K/W K/W K/W ELECTRICAL CHARACTERISTICS All characteristics are per diode at Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 3 A; Tj = 125˚C IF = 6 A; Tj = 125˚C IF = 6 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C MIN. TYP. MAX. UNIT 0.55 0.67 0.77 0.1 5 96 0.6 0.72 0.94 0.4 15 V V V mA mA pF September 1998 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR645CTD series 3 2.5 2 1.5 1 0.5 Forward dissipation, PF (W) PBYR645CTD Tmb(max) / C 138 D = 1.0 Vo = 0.48 V Rs = 0.04 Ohms 100mA Reverse current, IR (A) PBYR645CTD 0.5 10mA 0.2 0.1 142 125 C 1mA 100 C 75 C I tp D= tp T t 146 100uA 50 C Tj = 25 C T 0 0 1 2 3 4 Average forward current, IF(AV) (A) 150 5 10uA 0 25 Reverse voltage, VR (V) 50 Fig.1. Maximum forward dissipation per diode PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj 2.5 Forward dissipation, PF (W) Vo = 0.48 V Rs = 0.04 Ohms PBYR645CTD Tmb(max) / C a = 1.57 1.9 2.2 2.8 142 1000 Junction capacitance, Cd (pF) PBYR645CTD 2 1.5 4 100 1 146 0.5 0 150 3 0 0.5 1 1.5 2 2.5 Average forward current, IF(AV) (A) 10 1 10 Reverse voltage, VR (V) 100 Fig.2. Maximum forward dissipation per diode PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). PBYR645CTD Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. 12 10 8 6 4 2 Forward current, IF (A) Tj = 25 C Tj = 125 C typ 10 Transient thermal impedance, Zth j-mb (K/W) 1 max 0.1 P D tp D= tp T t T 0 0.01 0 0.2 0.4 0.6 0.8 1 Forward voltage, VR (V) 1.2 1.4 1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR645CTD Fig.3. Typical and maximum forward characteristic per diode IF = f(VF); parameter Tj Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). September 1998 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm : Net Mass: 1.4 g seating plane 6.73 max 1.1 2.38 max 0.93 max 5.4 PBYR645CTD series tab 4 min 6.22 max 10.4 max 4.6 2 1 3 0.5 min 0.3 0.5 0.5 0.8 max (x2) 2.285 (x2) Fig.7. SOT428 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 7.0 7.0 2.15 2.5 1.5 4.57 Fig.8. SOT428 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR645CTD series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 5 Rev 1.100