PBYR7020WT

Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance PBYR7025WT series SYMBOL QUICK REFERENCE DATA VR = 20 V / 25 V IO(AV) = 70 A VF ≤ 0.46 V SOT429 (TO247) DESCRIPTION a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR7025WT series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab anode 1 (a) cathode (k) anode 2 (a) cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER CONDITIONS MIN. -20 20 20 20 70 70 500 550 MAX. -25 25 25 25 UNIT V V V A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 116 ˚C Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Tmb ≤ 114 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 114 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature IRRM IRSM Tstg Tj -65 - 2 2 150 150 A A ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. 45 MAX. 0.9 0.65 UNIT K/W K/W K/W December 1998 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage (per diode) Reverse current (per diode) Junction capacitance (per diode) CONDITIONS IF = 35 A; Tj = 125˚C IF = 70 A; Tj = 125˚C IF = 70 A VR = VRRM VR = VRRM; Tj = 100 ˚C f = 1MHz; VR = 5V; Tj = 25 ˚C to 125 ˚C PBYR7025WT series MIN. - TYP. 0.40 0.52 0.58 0.8 40 2100 MAX. 0.46 0.54 0.64 15 120 - UNIT V V V mA mA pF December 1998 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR7025WT series Forward dissipation, PF (W) 25 PBYR7025WT 20 15 10 0.2 0.1 0.5 Tmb(max) (C) 127.5 132 D = 1.0 136.5 141 145.5 T 1000 100 Reverse Current, IR (mA) PBYR7025WT Tj =125C 10 Tj =100C Tj =75C 1 0.1 0.01 0 5 10 15 20 Reverse Voltage, VR (V) 25 30 Tj =50C Tj =25C tp D = tp/T 5 0 0 10 20 30 40 Average forward current, IF(AV) (A) 150 50 Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj Forward dissipation, PF (W) 18 16 14 12 10 8 6 4 2 0 0 5 4 PBYR7025WT 2.2 2.8 1.9 Tmb(max) (C) 133.8 a = 1.57 135.6 137.4 139.2 141 142.8 144.6 146.4 148.2 150 1000 10000 Cd / pF PBYR7025WT 10 15 20 25 30 Average forward current, IF(AV) (A) 35 100 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Forward Current, IF (A) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0 Tj = 125 C PBYR7025WT Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 150 ˚C. 10 Tj = 25 C typ max 1 Transient Thermal Impedance, Zth j-mb (K/W) PBYR7025WT Single pulse 0.1 P D tp 0.01 t 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Forward Voltage, VF (V) Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp). December 1998 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 5 g 5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 PBYR7025WT series o 3.5 max 2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M 15.5 min Fig.7. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". December 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR7025WT series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 5 Rev 1.000