PDTA114

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114TE PNP resistor-equipped transistor Preliminary specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 1998 Jul 23 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor FEATURES • Built-in bias resistor R1 (typ. 10 kΩ) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuit applications • Inverter circuit configurations without use of an external resistor. 1 Top view 2 handbook, 4 columns PDTA114TE 3 3 R1 1 2 MAM359 Fig.1 Simplified outline (SC-75) and symbol. DESCRIPTION PNP resistor-equipped transistor in an SC-75 plastic package. NPN complement: PDTC114TE. 1 3 2 MARKING TYPE NUMBER PDTA114TE MARKING CODE 11 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V CONDITIONS open base − − − − 200 7 MIN. − − − − − 10 TYP. MAX. −50 −100 −100 150 − 13 kΩ UNIT V mA mA mW 1998 Jul 23 2 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input resistor collector capacitance CONDITIONS IE = 0; VCB = −50 V IB = 0; VCE = −30 V IB = 0; VCE = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −5 V; IC = −1 mA MIN. − − − − 200 − 7 IE = ie = 0; VCB = −10 V; f = 1 MHz − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 833 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. PDTA114TE MAX. −50 −50 −5 −100 −100 150 +150 150 +150 V V V UNIT mA mA mW °C °C °C UNIT K/W TYP. − − − − − − 10 − MAX. −100 −1 −50 −100 − −150 13 3 UNIT nA µA µA nA mV kΩ pF collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA 1998 Jul 23 3 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE MBK784 handbook, halfpage 600 handbook, halfpage −1 MBK783 hFE (1) VCEsat (V) 400 (1) (2) −10−1 (2) (3) 200 (3) 0 −10−1 −1 −10 IC (mA) −102 −10−2 −10−1 −1 −10 IC (mA) −102 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. 1998 Jul 23 4 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PDTA114TE SOT416 D B E A X vMA HE 3 Q A 1 e1 e bp 2 wM B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT416 REFERENCES IEC JEDEC EIAJ SC-75 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1998 Jul 23 5 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PDTA114TE This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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