PDTC123EM

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 2004 Mar 18 2004 Aug 06 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION PDTC123E series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 2.2 2.2 MAX. 50 100 − − UNIT V mA kΩ kΩ NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTC123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123ET PDTC123EU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 5A 6A 48 G1 TC123E *26(1) *48(1) PDTA123EE PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123ET PDTA123EU MARKING CODE PNP COMPLEMENT 2004 Aug 06 2 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING PDTC123E series PINNING TYPE NUMBER PDTC123ES handbook, halfpage SIMPLIFIED OUTLINE AND SYMBOL PIN 1 2 2 R1 1 R2 3 MAM364 DESCRIPTION base collector emitter 1 2 3 3 PDTC123EE PDTC123EEF PDTC123EK PDTC123ET PDTC123EU 1 Top view 2 MDB269 1 2 handbook, halfpage base emitter collector 3 R1 1 R2 3 3 2 PDTC123EM handbook, halfpage 1 2 3 R1 1 3 1 bottom view MHC506 base emitter collector 3 2 R2 2 2004 Aug 06 3 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PDTC123EE PDTC123EEF PDTC123EK PDTC123EM PDTC123ES PDTC123ET PDTC123EU − − − − − − − DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads PDTC123E series VERSION SOT416 SOT490 SOT346 SOT883 SOT54 SOT23 SOT323 leadless ultra small package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm plastic single-ended leaded (through hole) package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation SOT54 SOT23 SOT346 SOT323 SOT416 SOT490 SOT883 Tstg Tj Tamb Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C note 1 note 1 note 1 note 1 note 1 notes 1 and 2 notes 2 and 3 − − − − − − − −65 − −65 500 250 250 200 150 250 250 +150 150 +150 mW mW mW mW mW mW mW °C °C °C − − − − +12 −10 100 100 V V mA mA CONDITIONS open emitter open base open collector − − − MIN. MAX. 50 50 10 V V V UNIT 2004 Aug 06 4 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ THERMAL CHARACTERISTICS SYMBOL Rth(j-a) SOT54 SOT23 SOT346 SOT323 SOT416 SOT490 SOT883 Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz CONDITIONS VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 20 mA IC = 10 mA; IB = 0.5 mA IC = 1 mA; VCE = 5 V IC = 20 mA; VCE = 0.3 V PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 1 note 1 note 1 note 1 notes 1 and 2 notes 2 and 3 PDTC123E series VALUE 250 500 500 625 833 500 500 UNIT K/W K/W K/W K/W K/W K/W K/W MIN. − − − − 30 − − 2 1.54 0.8 − TYP. − − − − − − 1.2 1.6 2.2 1 − MAX. 100 1 50 2 − 150 0.5 − 2.86 1.2 2.5 UNIT nA µA µA mA mV V V kΩ pF 2004 Aug 06 5 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PACKAGE OUTLINES Plastic surface mounted package; 3 leads PDTC123E series SOT416 D B E A X vMA HE 3 Q A 1 e1 e bp 2 wM B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT416 REFERENCES IEC JEDEC EIAJ SC-75 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2004 Aug 06 6 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series Plastic surface mounted package; 3 leads SOT490 D B E A X HE vMA 3 A 1 e1 e bp 2 wMB Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.8 0.6 bp 0.33 0.23 c 0.2 0.1 D 1.7 1.5 E 0.95 0.75 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.5 0.3 v 0.1 w 0.1 OUTLINE VERSION SOT490 REFERENCES IEC JEDEC EIAJ SC-89 EUROPEAN PROJECTION ISSUE DATE 98-10-23 2004 Aug 06 7 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series Plastic surface mounted package; 3 leads SOT346 E D B A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.3 1.0 A1 0.1 0.013 bp 0.50 0.35 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 1.9 e1 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 OUTLINE VERSION SOT346 REFERENCES IEC JEDEC TO-236 EIAJ SC-59 EUROPEAN PROJECTION ISSUE DATE 98-07-17 2004 Aug 06 8 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883 L 2 b e L1 3 b1 1 e1 A A1 E D 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 2004 Aug 06 9 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-06-28 2004 Aug 06 10 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series Plastic surface mounted package; 3 leads SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2004 Aug 06 11 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ PDTC123E series Plastic surface mounted package; 3 leads SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2004 Aug 06 12 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PDTC123E series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Aug 06 13 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/07/pp14 Date of release: 2004 Aug 06 Document order number: 9397 750 13667