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PDTD113EK

PDTD113EK

  • 厂商:

    PHILIPS

  • 封装:

  • 描述:

    PDTD113EK - Low VCEsat (BISS) transistors - NXP Semiconductors

  • 数据手册
  • 价格&库存
PDTD113EK 数据手册
Automotive small-signal discretes solutions Drive the future with our innovative portfolio Automotive Simplifying design through increased functionality By delivering more functionality from individual products, we help to cut development times. With just a few small-signal discretes several circuit blocks can be build and therewith the number of different components on the bill-of-materials can be reduced significantly. Our small-signal discretes portfolio offers power and performance levels previously only associated with much larger packages allowing you to replace medium-power products with more compact alternatives. And because you can now get high-performance transistors and diodes in low-cost small-signal packages, you can significantly cut costs. Whether it’s superior ESD protection or loadswitch functionality integrated into a single component, our portfolio makes it easier to design a new system. 2 small-signal discretes solutions As automotive manufacturers strive to enhance safety, performance, comfort and fuel-efficiency levels, the semiconductor content of vehicles is rising and electronic systems are becoming more complex. Consequently, system suppliers must meet increasingly severe requirements. Building on our expertise in both automotive and small-signal discretes solutions, Philips offers an extensive portfolio of discrete components that help suppliers meet the rigorous and diverse technical demands on automotive electronics. The wide portfolio enables automotive designers to be flexible in their designs. By means of integrated products the component count is decreased and thus costs can be reduced. All our new products are released in the well-known SOT23 package, as well as in smaller packages like SOT323 (SC-70), SOD323 (SC-76) and SOD323F (SC-90). To support the trend towards integration also multiple transistors and diodes are available integrated into just a single package like SOT457 (SC-74) and SOT363 (SC-88). Philips has all the technologies in place to lead the way in small-signal discretes products, allowing to develop automotive applications that will drive the future. Key families - Low VCEsat (BISS) transistors - Resistor-equipped transistors (RETs) - Complex discretes • BISS Loadswitches • Matched pair transistors • MOSFET drivers - Low VF (MEGA) Schottky rectifiers - ESD protection diodes Key benefits - More power - Lower costs - More functionality - Improved reliability - Automotive packages 3 Low VCEsat (BISS) transistors These Breakthrough In Small-Signal (BISS) transistors offer best-in-class efficiency, therefore getting the heat out of your applications. These cost-effective alternatives to medium-power transistors deliver 1 – 5 A capability in SOT223 (SC-73), SOT89 (SC-62), SOT23 or SOT457 (SC-74). Key features - Reduced thermal and electrical resistance - Up to 5 A collector current capability IC - Up to 10 A peak collector current ICM - High performance to boardspace ratio - High current gain hFE - even at high IC - Extensive range of products available Key benefits - Less heat generation and therefore use at high ambient temperatures possible - Cost effective replacement of medium power transistors - Increased performance from small-signal discrete footprints VCC CONTROLLER MSD923 DC/DC converter Key applications - Applications where heat is a concern (e.g. engine- or dashboard mounted components) - High and low side switches, e.g. in control units - Drivers in low supply voltage applications, e.g. fans, motors - Inductive load drivers, e.g. relays, buzzers - MOSFET drivers Less heat generation with BISS transistors SOT223: IC = 1.55 A; IB = 0.1 A; PCB FR4 + 1 cm2 Cu BCP51, Tj = 130°C PBSS9110Z, Tj = 103°C SOT223 (SC-73) PBSS5350Z, Tj= 60°C SOT89 (SC-62) PBSS5540Z, Tj = 45°C SOT23 SOT457 (SC-74) Ptot 2000 mW IC (A) VCEO (V) 30 1.0 40 60 100 30 2.0 40 50 20 30 3.0 50 60 80 100 4.0 5.0 40 80 20 PBSS4540Z PBSS5540Z PBSS4350Z PBSS5350Z PBSS8110Z PBSS9110Z NPN PNP Ptot 1300 mW NPN PNP NPN Ptot 480 mW PNP PBSS5130T PBSS5140T PBSS5160T PBSS9110T PBSS5230T PBSS5240T PBSS5350T NPN PBSS4130T PBSS4140T PBSS4160T PBSS8110T PBSS4230T PBSS4240T Ptot 750 mW PNP PBSS4140DPN (NPN/PNP) PBSS8110D PBSS9110D PBSS4240DPN (NPN/PNP) PBSS4250X PBSS4320X PBSS4330X PBSS4350X PBSS5250X PBSS5320X PBSS5330X PBSS5350X PBSS4350T PBSS4350D PBSS303ND PBSS304ND PBSS305ND PBSS5350D PBSS303PD PBSS304PD PBSS305PD PBSS5440D PBSS4540X PBSS4480X PBSS4520X PBSS5540X PBSS5480X PBSS5520X PBSS4440D 4 Resistor-equipped transistors (RETs) Developed especially for the automotive sector, 500 mA RETs combine a transistor with two resistors to provide an optimal integrated solution for digital applications in automotive systems, for example control units. Also an extensive portfolio with single and double 100 mA RETs is available for standard small-signal digital applications. Key features - Transistor and two resistors integrated in one package - Initial 500 mA portfolio with several resistor combinations in SOT23 and SOT346 (SC-59A) - Further resistor combinations and double versions are planned Key benefits - Lower handling and inventory costs - Reduced boardspace requirements - Shorter assembly times and reduced pick-and-place efforts - Simpler design process - Increased end product reliability due to fewer soldering points SOT23 SOT346 (SC-59A) power supply R4 R3 control input R1 R2 Tr2 Tr1 Rload High side switch bra182 Key applications - Digital applications - Switching loads, e.g. for instrument clusters - Controlling IC inputs, e.g. in engine control units 500 mA RETs IC max. (mA) 500 VCEO max. (V) 50 R1 (kΩ) 1 2.2 1 2.2 R2 (kΩ) 1 2.2 10 10 NPN PDTD113ET PDTD123ET PDTD113ZT PDTD123YT PNP PDTB113ET PDTB123ET PDTB113ZT PDTB123YT NPN PDTD113EK PDTD123EK PDTD113ZK PDTD123YK PNP PDTB113EK PDTB123EK PDTB113ZK PDTB123YK SOT363 (SC-88) 100 mA RETs SOT23 SOT323 (SC-70) Configuration IC max. (mA) VCEO max. (V) R1 (kΩ) R2 (kΩ) 2.2 R1 = R2 4.7 10 22 47 100 2.2 2.2 4.7 R1 ≠ R2 100 50 4.7 10 22 47 47 2.2 Only R1 4.7 10 22 47 100 2.2 4.7 10 22 47 100 10 47 10 47 47 47 10 22 NPN PDTC123ET PDTC143ET PDTC114ET PDTC124ET PDTC144ET PDTC115ET PDTC123YT PDTC123JT PDTC143XT PDTC143ZT PDTC114YT PDTC124XT PDTC144VT PDTC144WT PDTC123TT PDTC143TT PDTC114TT PDTC124TT PDTC144TT PDTC115TT PNP PDTA123ET PDTA143ET PDTA114ET PDTA124ET PDTA144ET PDTA115ET PDTA123YT PDTA123JT PDTA143XT PDTA143ZT PDTA114YT PDTA124XT PDTA144VT single NPN PDTC123EU PDTC143EU PDTC114EU PDTC124EU PDTC144EU PDTC115EU PDTC123YU PDTC123JU PDTC143XU PDTC143ZU PDTC114YU PDTC124XU PDTC144VU PDTC144WU PDTC123TU PDTC143TU PDTC114TU PDTC124TU PDTC144TU PDTC115TU PNP PDTA123EU PDTA143EU PDTA114EU PDTA124EU PDTA144EU PDTA115EU PDTA123YU PDTA123JU PDTA143XU PDTA143ZU PDTA114YU PDTA124XU PDTA144VU PDTA144WU PDTA123TU PDTA143TU PDTA114TU PDTA124TU PDTA144TU PDTA115TU PUMH17 PUMH30 PUMH7 PUMH4 PUMH19 PUMH14 PUMH10 PUMH18 PUMH13 PUMH9 PUMH16 NPN/NPN PUMH20 PUMH15 PUMH11 PUMH1 PUMH2 PUMH24 double NPN/PNP PUMD20 PUMD15 PUMD3 PUMD2 PUMD12 PUMD24 PUMD10 PUMD18 PUMD13 PUMD9 PUMD16 PUMD17 PUMD30 PUMD6 PUMD4 PUMD19 PUMD14 PNP/PNP PUMB20 PUMB15 PUMB11 PUMB1 PUMB2 PUMB24 PUMB10 PUMB18 PUMB13 PUMB9 PUMB16 PUMB17 PUMB30 PUMB3 PUMB4 PUMB19 PUMB14 PDTA144WT PDTA123TT PDTA143TT PDTA114TT PDTA124TT PDTA144TT PDTA115TT 5 BISS Loadswitches Power supply Tr1 Low VCEsat (BISS) R2 Load Combining a BISS transistor with a RET, BISS Loadswitches provide full miniature loadswitch functionality in a single package and deliver best-in-class performance. Control input R1 Tr2 (RET) Key features - BISS transistor and RET in one package - Low “threshold” voltage (< 1 V) compared to MOSFET - Small drive power required - Best-in-class performance for loadswitches - Available for switching loads of 0.5 – 1 A Key benefits - Integrated on-the-shelve solution for switching loads • Saves design and sourcing costs • Reduction in boardspace requirements • Just one or two external resistors needed for full loadswitch capability - Combination of low voltage drop and low base drive current • BISS transistor in the power path provides the lowest energy-losses • RET in the control path provides a low base drive current MSE336 GND Loadswitch Key applications - Supply line switches, e.g. in control units - Control of lamps, motors and switches, e.g. instrument clusters - High side switches for drivers SOT457 (SC-74) SOT363 (SC-88) IC (A) VCEO (V) VCEsat (mV) @ 500 mA R1 = R2 (kΩ) 2.2 4.7 PBLS4001Y PBLS4002Y PBLS4003Y PBLS4004Y PBLS4005Y PBLS4001D PBLS4002D PBLS4003D PBLS4004D PBLS4005D PBLS6001D PBLS6002D PBLS6003D PBLS6004D PBLS6005D 0.5 40 350 10 22 47 2.2 4.7 40 170 10 22 47 2.2 4.7 1.0 60 180 10 22 47 6 Matched pair transistors Matched pair transistors are double transistors with matched current gain hFE1/hFE2 and matched base-emitter voltage VBE1 - VBE2. The optimal product for the most common applications is offered by means of several matching-categories and different pinning options. Internally the transistors are fully isolated. Key features - Current gain matching: hFE1/hFE2 = 0.7, 0.9, 0.95, 0.98 - Base-emitter voltage matching: VBE1 - VBE2 = 2 mV - Standard double transistor pin-out for BCM-types - Application optimized pin-out for all PMP-types - Common emitter configuration for 5pin PMP-types Key benefits - Improved performance of current mirror and differential amplifier circuits - Drop-in replacement for standard double transistors (BCM-series) - Simplified board layout (PMP-series) - Eliminates need for costly additional trimming Vin Rsense Vout Vsense Current sensor using matched pairs MSE265 Key applications - Current mirror e.g. for current measurement or to drive LED’s with a constant current - Differential amplifier e.g. sensor signal amplification - Comparator e.g. for DC/DC converters SOT143B SOT457 (SC-74) SOT353 (SC-88A) SOT363 (SC-88) Ptot max. Polarity IC (mA) VCEO (V) 30 NPN 100 hFE min. 110 hFE max. 800 hFE1/hFE2 0.7 0.9 45 200 450 0.9 0.95 0.98 30 PNP 100 110 800 0.7 0.9 45 200 450 0.9 0.95 0.98 VBE1 - VBE2 (mV) n.a. 2 2 2 2 n.a. 2 2 2 2 250 mW BCV61/A/B/C BCM61B 380 mW 300 mW 300 mW BCM847DS PMP4501G PMP4201G BCV62/A/B/C BCM62B BCM857DS PMP5501G PMP5201G BCM847BS PMP4501Y PMP4201Y BCM857BS PMP5501Y PMP5201Y 7 MOSFET drivers Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET driving functionality. With a choice of configurations Philips offers solutions to take load from the driving circuit, improve the efficiency of the MOSFET and enable design flexibility. Key features - Complete MOSFET driving functionality in one package - Several configurations available Key benefits - Improved MOSFET efficiency by • Minimizing rise and fall time • Fast gate (dis-)charge of the driven MOSFET - Takes load from the driving circuit and thus minimizes the IC power dissipation - More design flexibility: the control IC and the MOSFET do not have to be placed as close as possible anymore - Cost-effective alternative to IC-solutions Key applications - MOSFET driver - Bipolar power transistor driver - Push-pull driver SOT457 (SC-74) SOT346 (SC-59A) SOT457 (SC-74) SOT457 (SC-74) 3 D1 3 2 3 Rext 6 2, 3 Tr1 2 D1 Tr1 2 D1 Tr1 R1 4, 5 D1 Tr2 Configuration Ptot max. Contains IC (A) 0.1 ICM (A) 1 6 Tr1 Tr2 5 Tr3 1 3 Tr1 R2 1 Tr2 4 4 bra837 1 bra838 1 bra839 5, 6 2 bra840 bra841 600 mW PMD9050D 250 mW PMD4001K (NPN) PMD5001K (PNP) 2.2 4.7 10 PMD4002K (NPN) PMD5002K (PNP) PMD4003K (NPN) PMD5003K (PNP) 600 mW R1 = R2 (kΩ) PMD9010D PMD9001D PMD9002D PMD9003D 600 mW General purpose transistors 0.2 Switching transistors reduced storage time Low VCEsat (BISS) transistors Low VCEsat, high hFE and IC 0.6 1.0 1.2 2.0 PMD2001D PMD3001D Release mid 2006 8 Low VF (MEGA) Schottky rectifiers Maximum Efficiency General Application (MEGA) Schottky rectifiers offer extremely low forward voltage drop during operation, resulting in the highest efficiency and reduced heat dissipation. They are ideal, cost-effective replacements for rectifiers in SMA or SOD123. Key features - Ultra low forward voltage drop VF - Up to 3 A continuous current capability IF - Up to 10 A peak current capability IFSM - Low power dissipation - Integrated guard ring for stress protection Key benefits - Less heat generation and therefore increased reliability - Cost effective replacement of SMA and SOD123 rectifiers • Reduced boardspace requirements • Medium power capability in SOD323F (SC-90) - Low losses over the entire current range - Improved current handling capability - Increased performance from small-signal discrete footprints Key applications - Power management circuits – especially DC/DC conversion - Various rectifier circuits, e.g. in airbag control units - Low power applications, e.g. in control units - Free wheeling diode for inductive loads in relays and motors - Reverse polarity protection, e.g. in car multimedia applications SOT457 (SC-74) SOT23 SOD123F SOD323F (SC-90) IR max. (µA) @ IF max. (A) 0.5 VR max. (V) 20 30 40 20 30 30 40 60 1.5 20 30 10 2 3 20 30 10 IFSM (A) 6 10 10 9 10 9 1 10 10 10 10 17.5 9 9 9 9 9 9 VF max. (mV) 390 430 470 500 550 430 560 520 640 660 650 660 550 460 525 620 530 VF max. 200 150 100 200 70 200 150 50 100 50 350 70 1000 3000 200 1000 3000 PMEG6010AED PMEG2015EH PMEG3015EH PMEG1020EH PMEG2020EH PMEG3020EH PMEG1030EH PMEG2015EJ PMEG3015EJ PMEG1020EJ PMEG2020EJ PMEG3020EJ PMEG1030EJ PMEG4010EH PMEH2010AEH PMEG3010EH PMEG3010EJ PMEG3010CEJ PMEG4010EJ PMEG6010CEJ PMEG2005ET PMEG3005ET PMEG4005ET PMEG2005EH PMEG3005EH PMEG4005EH PMEG2010EH PMEG2005EJ PMEG3005EJ PMEG4005EJ PMEG2010EJ PMEG2010AEJ 9 ESD protection diodes With their optimized diode structure, Philips’ ESD protection diodes offer a superior size / performance ratio with outstanding ESD protection of automotive electronics. A wide portfolio is available for protection of all interfaces in automotive electronics; from general line-protection for engine/body -controllers up to specific devices for protection of USB-interfaces or antenna-inputs in car entertainment applications. Key features - Excellent ESD clamping performance - Ultra low leakage current - Low device capacitance - ESD protection up to 30 kV - IEC 61000-4-2, level 4 compliant (8 kV contact, 15 kV air discharge) Key benefits - Optimized diode structure for best-in-class ESD protection of today’s sensitive car electronics - Low clamping voltages and fast response times ensure optimal protection - Ultra low leakage current helps to reduce overall power consumption - Low device capacitance keeps unwanted disturbances in the circuits to a minimum Key applications - Data and audio interfaces, e.g. car multimedia line protection - Overvoltage protection, e.g. airbag controllers - Car drivers interface protection, e.g. dashboard panels - CAN and LIN bus protection Number of lines SOT23 SOD323 (SC-76) uniConfiguration 15 V 1 24 V 2 bidirectional 1 IRM max. @ VRWM µA 0.05 V 15 13 0.05 24 160 PESD1LIN C max. pF PPP max. W bra526 1 3 2 2 3 0.05 1 0.05 0.05 1 1 1 1 0.05 0.05 24 5 12 24 5.25 12 24 5 12 24 17 200 75 50 200 75 50 65 13 9 200 260 180 160 260 180 160 500 200 200 PESD1CAN PESD5V0S2UAT PESD12VS2UAT PESD24VS2UAT PESD5V2S2UT PESD12VS2UT PESD24VS2UT PESD5V0L1BA PESD12VL1BA PESD24VL1BA 2 mse213 1 1 1 1 1 1 1 1 2 2 2 2 bra004 1 3 2 2 2 mse212 1 mse211 2 1 1 10 PESD1LIN and PESD1CAN Also specific automotive devices are available; with the PESD1LIN Philips offers the best-in-class ESD protection of one LIN bus line. The asymmetrical diode configuration ensures optimized electromagnetic immunity of LIN transceivers. The PESD1CAN is designed to protect two CAN bus lines and can be used for both high speed CAN bus and the fault-tolerant CAN bus protection. With the very low C max. of the PESD1CAN the unwanted parasitic capacitance is reduced to an absolute minimum. Power Application (e.g. electro motor, inductive loads) LIN Node Connector SPLIT CANH CAN BUS TRANSCEIVER R T/2 R T/2 Application (e.g. voltage regulator and microcontroller) CBAT BAT LIN CAN bus CANL 24 V CMASTER/SLAVE GND LIN Transceiver 15 V Common mode choke (optional) CG 2 1 PESD1LIN PESD1CAN 3 bra328 bra519 Small-signal discretes packages for automotive Series S-mini Philips name JEITA SOD323F SC-90 SOD323 SC-76 SOD123F SOT323 SC-70 SOT353 SC-88A SOT363 SC-88 Mini SOT23 SOT346 SC-59 SOT143B SOT457 SC-74 Medium power SOT89 SC-62 SOT223 SC-73 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.25 3 flatleads 3/4 2.9 x 1.3 x 1.0 2.9 x 1.5 x 1.0 4 6 2.9 x 1.3 x 1.0 2.9 x 1.5 x 1.15 3 3 2.0 x 1.25 x 0.95 6 2.0 x 1.25 x 0.95 5 2.6 x 1.6 x 1.1 2.0 x 1.25 x 0.95 2 flatleads 3 1.7 x 1.25 x 0.95 Body size (mm) lxwxh 1.7 x 1.25 x 0.7 2 flatleads 2 Pins 11 Philips Semiconductors Philips Semiconductors is one of the world’s top semiconductor suppliers, with 20 manufacturing and assembly sites and a sales organization that delivers in 60 countries. For a complete up-to-date list of our sales offices please visit our website http://www.semiconductors.philips.com/sales ©2006 Koninklijke Philips Electronics N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: May 2006 Document order number: 9397 750 15548 Printed in the Netherlands
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