PESD15VU1UT

PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients. 1.2 Features s s s s Unidirectional ESD protection of one line Ultra low diode capacitance: Cd = 0.6 pF Max. peak pulse power: PPP up to 200 W Low clamping voltage s ESD protection > 23 kV s IEC 61000-4-2; level 4 (ESD) s IEC 61000-4-5; (surge) 1.3 Applications s 10/100/1000 Ethernet s FireWire s Communication systems s Local Area Network (LAN) equipment s Computers and peripherals s High-speed datalines 1.4 Quick reference data Table 1: Symbol VRWM Quick reference data Parameter reverse stand-off voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT Cd [1] Conditions Min - Typ 0.6 Max 3.3 5.0 12 15 24 1.5 Unit V V V V V pF diode capacitance Measured from pin 1 to 2 f = 1 MHz; VR = 0 V [1] - Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 2. Pinning information Table 2: Pin 1 2 3 Pinning Description cathode ESD protection diode cathode compensation diode common anode 1 2 1 2 006aaa441 Simplified outline 3 Symbol 3 3. Ordering information Table 3: Ordering information Package Name PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT Description plastic surface mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4: Marking codes Marking code [1] *AP *AQ *AR *AS *AT Type number PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 2 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP Parameter peak pulse power PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT IPP peak pulse current PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT Tj Tamb Tstg [1] Conditions 8/20 µs [1] Min - Max 80 80 200 200 200 5 5 5 5 3 150 +150 +150 Unit W W W W W A A A A A °C °C °C 8/20 µs [1] −65 −65 junction temperature ambient temperature storage temperature Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. 9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 3 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package ESD maximum ratings Parameter electrostatic discharge voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT PESDxU1UT HBM MIL-STD-883 Conditions IEC 61000-4-2 (contact discharge) [1] [2] Table 6: Symbol VESD Min Max Unit - 30 30 30 30 23 10 kV kV kV kV kV kV [1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 to 2 Table 7: Standard ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV IEC 61000-4-2; level 4 (ESD) HBM MIL-STD-883; class 3 001aaa631 120 IPP (%) 80 100 % IPP; 8 µs 001aaa630 IPP 100 % 90 % e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (µs) 40 30 ns 60 ns t 0 Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 4 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 6. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol VRWM Parameter reverse stand-off voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT IRM reverse leakage current PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT VBR breakdown voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT Cd VCL diode capacitance clamping voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT rdif differential resistance PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT [1] [2] Conditions Min - Typ 0.25 0.03